Journal of Crystal Growth

Journal of Crystal Growth, Vol.318, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (259 articles)

1 - 2	The 16th International Conference on Crystal Growth (ICCG16) Beijing, China 8-13 August 2010 preface Kuech TF
3 - 3	The 16th International Conference on Crystal Growth (ICCG16) Beijing, China 8-13 August 2010 preface Chen CT, Kuech TF, Nishinaga T, Zheng LL
5 - 9	Step bunching induced by flow in solution Sato M
10 - 13	Zipping process on the step bunching in the vicinal surface of the restricted solid-on-solid model with the step attraction of the point contact type Akutsu N
14 - 17	Formation of finger-like step patterns on a Si(111) vicinal face Sato M, Kondo S, Uwaha M
18 - 22	Morphological instability of heteroepitaxial growth on vicinal substrates: A phase-field crystal study Yu YM, Backofen R, Voigt A
23 - 27	Morphological instability of interface, cell and dendrite during directional solidification under strong magnetic field Li X, Fautrelle Y, Ren ZM, Gagnoud A, Zhang YD, Esling C
28 - 31	Global instability and selection of cellular array growth in solidification Xu JJ, Chen YQ
32 - 35	Steady deep-cellular growth in solidification Chen YQ, Xu JJ
36 - 39	Relation between growth and melt shapes of ice crystals Maruyama M
40 - 45	GPU-accelerated phase-field simulation of dendritic solidification in a binary alloy Yamanaka A, Aoki T, Ogawa S, Takaki T
46 - 50	Adaptive phase field modeling of grain boundary diffusion Yeh SY, Chen CC, Lan CW
51 - 54	Adaptive three-dimensional phase-field modeling of dendritic crystal growth with high anisotropy Lin HK, Chen CC, Lan CW
55 - 58	Position and spacing of sidebranches in binary system Li XM, Wang ZD
59 - 65	The effect of structure on tensile properties of directionally solidified Zn-based alloys Ares AE, Schvezov CE
66 - 71	Monte Carlo simulation of growth of hard-sphere crystals on a square pattern Mori A
72 - 75	Ab initio-based approach to adsorption-desorption behavior on the InAs(1 1 1)A heteroepitaxially grown on GaAs substrate Ito T, Ishimure N, Akiyama T, Nakamura K
76 - 78	Specific surface free energy and the morphology of synthesized ruby single crystals Suzuki T, Oda M
79 - 83	Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation Akiyama T, Yamashita T, Nakamura K, Ito T
84 - 88	Variation in Si(1 0 0) surface roughness caused by H-termination during high-temperature Ar annealing Araki K, Isogai H, Takeda R, Izunome K, Zhao XW
89 - 92	Steady chirality conversion by grinding crystals-Supercritical and subcritical bifurcations Uwaha M
93 - 98	Grinding-induced homochirality in crystal growth Saito Y, Hyuga H
99 - 102	Kinetics of mass crystallization of calcium carbonate at 25, 30 and 37 degrees C Rosa S, Madsen HEL
103 - 109	Recent developments in understanding of the metastable zone width of different solute-solvent systems Sangwal K
110 - 116	A unique growth mechanism of donut-shaped Mg-Al layered double hydroxides crystals revealed by AFM and STEM-EDX Budhysutanto WN, Van Den Bruele FJ, Rossenaar BD, Van Agterveld D, Van Enckevort WJP, Kramer HJM
117 - 121	Crystal growth rates and secondary nucleation threshold for gamma-DL-methionine in aqueous solution Wantha L, Flood AE
122 - 124	Growth kinetics of KH2PO4 crystals in relation to solution macrocomposition Vorontsov DA, Ershov VP, Portnoy VN, Rodchenkov VI, Sibirkin AA
125 - 130	Dissolution kinetics at edge dislocation site of (1 1 1) surface of copper crystals Imashimizu Y
131 - 134	Foreign particle behavior at the growth interface of tetrahydrofuran clathrate hydrates Suzuki T, Muraoka M, Nagashima K
135 - 140	Skeletal morphologies and crystallographic orientations of olivine, diopside and plagioclase Zhao SR, Liu R, Wang QY, Xu HJ, Fang M
141 - 144	Theoretical investigations for the polytypism in semiconductors Ito T, Kondo T, Akiyama T, Nakamura K
145 - 149	The effect of far-field uniform flow on the particle growth in an undercooled alloy melt Chen MW, Jiang H, Wang YL, Wang QS, Wang ZD
150 - 155	Flow modelling with relevance to vertical gradient freeze crystal growth under the influence of a travelling magnetic field Niemietz K, Galindo V, Patzold O, Gerbeth G, Stelter M
156 - 161	On experimental and numerical prediction of instabilities in Czochralski melt flow configuration Haslavsky V, Miroshnichenko E, Kit E, Gelfgat AY
162 - 167	Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method Chen CH, Chen JC, Lu CW, Liu CM
168 - 172	Numerical simulation on turbulent flows in vertical chemical vapor deposition reactors Tian Y, Li CF, Jiang HH, Li H, Zuo R
173 - 177	Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals Noghabi OA, M'Hamdi M, Jomaa M
178 - 182	Investigation of nitrogen behaviors during Czochralski silicon crystal growth Yu XG, Yang DR, Hoshikawa K
183 - 186	Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon Wang B, Zhang XP, Ma XY, Yang DR
187 - 192	Thermal optimization of CZ bulk growth and wafer annealing for crystalline dislocation-free silicon Prostomolotov AI, Verezub NA, Mezhennii MV, Reznik VY
193 - 195	Growth of 450 mm diameter semiconductor grade silicon crystals Lu Z, Kimbel S
196 - 199	In-situ observation of bubble formation at silicon melt-silica glass interface Minami T, Maeda S, Higasa M, Kashima K
200 - 207	Influence of inclusion on nucleation of silicon casting for photovoltaic (PV) application Wu B, Clark R
208 - 211	Analysis of grain orientation in cold crucible continuous casting of photovoltaic Si Gallien B, Duffar T, Lay S, Robaut F
212 - 218	Silicon crystal morphologies during solidification refining from Al-Si melts Ullah MW, Carlberg T
219 - 223	High-quality multi-crystalline silicon (mc-Si) grown by directional solidification using notched crucibles Li TF, Yeh KM, Hsu WC, Lan CW
224 - 229	Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process Teng YY, Chen JC, Lu CW, Chen HI, Hsu C, Chen CY
230 - 233	Improved fracture strength of multicrystalline silicon by germanium doping Wang P, Yu XG, Li ZL, Yang DR
234 - 238	The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon Raabe L, Patzold O, Kupka I, Ehrig J, Wurzner S, Stelter M
239 - 243	Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon Bellmann MP, Meese EA, Arnberg L
244 - 248	Numerical studies of flow patterns during Czochralski growth of square-shaped Si crystals Miller W, Frank-Rotsch C, Rudolph P
249 - 254	The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross section Rudolph P, Czupalla M, Lux B, Kirscht F, Frank-Rotsch C, Miller W, Albrecht M
255 - 258	Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace Gao B, Nakano S, Kakimoto K
259 - 264	3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells Chen XJ, Nakano S, Kakimoto K
265 - 268	Silica versus silicon nitride crucible: Influence of thermophysical properties on the solidification of multi-crystalline silicon by Bridgman technique Bellmann MP, Meese EA, Syvertsen M, Solheim A, Sorheim H, Arnberg L
269 - 274	Thermo-mechanical analysis of the ingot-crucible contact during multi-crystalline silicon ingot casting M'Hamdi M, Gouttebroze S, Fjaer HG
275 - 279	Numerical study on improved mixing in silicon melts by double-frequency TMF Dropka N, Miller W, Rehse U, Rudolph P, Bullesfeld F, Sahr U, Klein O, Reinhardt D
280 - 282	Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells Nakano S, Chen XJ, Gao B, Kakimoto K
283 - 287	Nucleation and bulk growth control for high efficiency silicon ingot casting Zhang H, Zheng LL, Ma X, Zhao B, Wang C, Xu FH
288 - 292	Thermal system design and optimization of an industrial silicon directional solidification system Ma X, Zheng LL, Zhang H, Zhao B, Wang C, Xu FH
293 - 297	Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingots Tanasie C, Vizman D, Friedrich J
298 - 303	Effects of argon flow on heat transfer in a directional solidification process for silicon solar cells Li ZYY, Liu LJ, Ma WC, Kakimoto K
304 - 312	Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells Li ZY, Liu LJ, Ma WC, Kakimoto K
313 - 317	Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growth Zheng LL, Ma X, Hu DL, Zhang H, Zhang T, Wan YP
318 - 323	Numerical simulation of oxygen transport during the CZ silicon crystal growth process Chen JC, Teng YY, Wun WT, Lu CW, Chen HI, Chen CY, Lan WC
324 - 327	Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications Arivanandhan M, Saito Y, Koyama T, Momose Y, Ikeda H, Tanaka A, Tatsuoka T, Aswal DK, Inatomi Y, Hayakawa Y
328 - 331	Novel material for super high efficiency multi-junction solar cells Ohshita Y, Suzuki H, Kojima N, Tanaka T, Honda T, Inagaki M, Yamaguchi M
332 - 336	The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the gamma-phase Parasyuk OV, Atuchin VV, Romanyuk YE, Marushko LP, Piskach LV, Olekseyuk ID, Volkov SV, Pekhnyo VI
337 - 340	Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD Myronov M, Liu XC, Dobbie A, Leadley DR
341 - 344	Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications Bosi M, Attolini G, Calicchio M, Ferrari C, Frigeri C, Gombia E, Motta A, Rossi F
345 - 350	Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(1 1 1) Zhang KHL, Lazarov VK, Lai HHC, Egdell RG
351 - 355	Time dependent simulations of the growth of III-V crystals by the liquid phase electroepitaxy Zytkiewicz ZR, Strak P, Krukowski S
356 - 359	Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition Jin YJ, Zhang DH, Chen XZ, Tang XH
360 - 362	Phase stability of Mn-doped GaInAs alloys Nakamura K, Miyake M, Akiyama T, Ito T
363 - 366	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy Ma TC, Lin YT, Lin HH
367 - 371	Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge Bosi M, Attolini G, Ferrari C, Frigeri C, Calicchio M, Rossi F, Kalman V, Attila C, Zsolt Z
372 - 378	GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient Doscher H, Moller K, Hannappel T
379 - 384	Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system Moiseev K, Dement'ev P, Romanov V, Mikhailova M
385 - 388	Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics Mercier F, Nishizawa S
389 - 393	High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method Ujihara T, Seki K, Tanaka R, Kozawa S, Alexander, Morimoto K, Sasaki K, Takeda Y
394 - 396	Defect structure of 4H silicon carbide ingots Lebedev AO, Avrov DD, Bulatov AV, Dorozhkin SI, Tairov YM, Fadeev AY
397 - 400	Growing 3C-SiC heteroepitaxial layers on alpha-SiC substrate by vapour-liquid-solid mechanism from the Al-Ge-Si ternary system Lorenzzi J, Ferro G, Cauwet F, Souliere V, Carole D
401 - 405	Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates Bosi M, Attolini G, Watts BE, Rossi F, Ferrari C, Ferenc R, Jiang LD
406 - 410	PVT growth of GaN bulk crystals Siche D, Gogova D, Lehmann S, Fizia T, Fornari R, Andrasch M, Pipa A, Ehlbeck J
411 - 414	Numerical simulation of ammonothermal growth processes of GaN crystals Jiang YN, Chen QS, Prasad V
415 - 417	Optical properties of fresh dislocations in GaN Yonenaga I, Ohno Y, Taishi T, Tokumoto Y, Makino H, Yao T, Kamimura Y, Edagawa K
418 - 422	An X-ray diffraction technique for analyzing structural defects including microstrain in nitride materials Paduano QS, Weyburne DW, Drehman AJ
423 - 426	Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapor deposition Fang H, Sang LW, Zhu WX, Long H, Yu TJ, Yang ZJ, Zhang GY
427 - 431	Effects of growth direction and polarity on bulk aluminum nitride crystal properties Filip O, Epelbaum BM, Bickermann M, Heimann P, Winnacker A
432 - 435	Investigations on cobalt doped GaN for spintronic applications Basha SM, Ramasubramanian S, Rajagopalan M, Kumar J, Kang TW, Subramaniam NG, Kwon Y
436 - 440	Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers Zhang XG, Soderman B, Armour E, Paranjpe A
441 - 445	Thermodynamic analysis on HVPE growth of InGaN ternary alloy Hanaoka K, Murakami H, Kumagai Y, Koukitu A
446 - 449	Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal-organic molecular beam epitaxy Lin CH, Abe R, Maruyama T, Naritsuka S
450 - 453	Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy Lin CH, Abe R, Maruyama T, Naritsuka S
454 - 459	Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy Chen KM, Wu YH, Yeh YH, Chiang CH, Chen KY, Lee WI
460 - 463	Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si Abe Y, Ohmori N, Watanabe A, Komiyama J, Suzuki S, Fujimori H, Nakanishi H, Egawa T
464 - 467	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer Pan X, Wei M, Yang CB, Xiao HL, Wang CM, Wang XL
468 - 473	Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si Ohachi T, Yamabe N, Yamamoto Y, Wada M, Ariyada O
474 - 478	Interface roughness of double buffer layer of GaN film grown on Si(1 1 1) substrate using GIXR analysis Yamamoto Y, Yamabe N, Ohachi T
479 - 482	Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE Murakami H, Cho HC, Suematsu M, Togashi R, Kumagai Y, Toba R, Koukitu A
483 - 487	Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD Jia TT, Zhou SM, Teng H, Lin H, Hou XR, Li YK, Li WJ, Wang J, Liu JQ, Huang J, Huang K, Zhang M, Wang JF, Xu K
488 - 491	Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique Fong WK, Leung KK, Surya C
492 - 495	MOVPE growth of high quality p-type InGaN with intermediate In compositions Sasamoto K, Hotta T, Sugita K, Bhuiyan AG, Hashimoto A, Yamamoto A, Kinoshita K, Kohji Y
496 - 499	Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T
500 - 504	Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Chiu CH, Lin DW, Lin CC, Li ZY, Chen YC, Ling SC, Kuo HC, Lu TC, Wang SC, Liao WT, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N
505 - 508	MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content Sugita K, Tanaka M, Sasamoto K, Bhuiyan AG, Hashimoto A, Yamamoto A
509 - 512	Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers Tao YB, Chen ZZ, Yu TJ, Yin Y, Kang XN, Yang ZJ, Ran GZ, Zhang GY
513 - 515	Hydrothermal growth of scandium-doped ZnO crystals Zuo YB, Lu FH, Zhang CL, Hang Y, Zhou WN, Huo HD, Qin SJ, Zhou HT, He XL, Li DP, Zhang HX, Chen YX, Gu SL
516 - 518	Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films Nakamura T, Masuko K, Ashida A, Yoshimura T, Fujimura N
519 - 523	Properties of ZnO grown on sapphire with different buffer layers Wu XF, Huang BW, Zhan HH, Kang JY
524 - 527	Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method Nishio M, Hiwatashi K, Saito K, Tanaka T, Guo QX
528 - 532	Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configuration Avetissov IC, Sukhanova EA, Khomyakov AV, Zinovjev AY, Kostikov VA, Zharikov EV
533 - 538	Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluride Prakasam M, Viraphong O, Teule-Gay L, Decourt R, Veber P, Villora EG, Shimamura K
539 - 544	Aggregation of donor nitrogen in irradiated Ni-containing synthetic diamonds Yelisseyev AP, Vins VG, Lobanov SS, Afonin DV, Blinkov AE, Maximov AY
545 - 548	Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films Prusa P, Kucera M, Mares JA, Nikl M, Nitsch K, Hanus M, Onderisinova Z, Cechak T
549 - 552	Growth and luminescence properties of Eu-doped (Na0.425-xLu0.575+x)F2.15+2x single crystals Furuya Y, Tanaka H, Fukuda K, Kawaguchi N, Yokota Y, Yanagida T, Chani V, Yoshikawa A
553 - 557	Semiconducting icosahedral boron arsenide crystal growth for neutron detection Whiteley CE, Zhang Y, Gong Y, Bakalova S, Mayo A, Edgar JH, Kuball M
558 - 562	Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method Tonn J, Danilewsky AN, Croll A, Matuchova M, Maixner J
563 - 569	Investigation of oxide removal from Si(1 0 0) substrates in dependence of the MOVPE process gas ambient Doscher H, Bruckner S, Hannappel T
570 - 571	Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence Wang H, Yuan JY, van Veldhoven RPJ, Notzel R
572 - 575	Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation Zhou HY, Qu SC, Jin P, Xu B, Ye XL, Liu JP, Wang ZG
576 - 579	Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE Novak J, Vavra I, Hasenohrl S, Reiffers M, Strichovanec P, Magen C
580 - 585	Microstructures of YBa1.85Eu0.15Cu3O7-delta superconducting films grown on SrTiO3 and YSZ substrates Xie QY, Gu MQ, Qian B, Wu XS, Jiang ZS, Zou J, Gao J
586 - 589	Crystal quality and surface morphology of uniaxial oriented multilayer perovskite thin films grown by excimer laser assisted MOD Nakajima T, Tsuchiya T, Kumagai T
590 - 594	Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (0 0 0-1): A study of ridge structures formation dynamics associated with temperature Ushio S, Yoshii A, Tamai N, Ohtani N, Kaneko T
595 - 598	Dewetting behavior of CsI layers on LiF substrate Fedorov A, Lebedinsky A, Mateychenko P
599 - 601	Preparation and characterization of single crystalline SnO2 films deposited on TiO2 (0 0 1) by MOCVD Luan CN, Ma J, Zhu Z, Kong LY, Yu QQ
602 - 605	Development of the beta-BaB2O4 crystal growth technique in the heat field of three-fold axis symmetry Kokh AE, Bekker TB, Vlezko VA, Kokh KA
606 - 609	Improved fourth harmonic generation in beta-BaB2O4 by tight elliptical focusing perpendicular to walk-off plane Takahashi M, Osada A, Dergachev A, Moulton PF, Cadatal-Raduban M, Shimizu T, Sarukura N
610 - 612	Flux growth of large KBBF crystals by localized spontaneous nucleation Wang XY, Yan X, Luo SY, Chen CT
613 - 617	Hydrothermal growth of KBBF crystals from KOH solution Zhou HT, He XL, Zhou WN, Hu ZG, Zhang CL, Huo HD, Wang JL, Qin SJ, Zuo YB, Lu FH, Liu LJ, Wang XY, Liu YC, Li DP, Zhang HX, Chen YX
618 - 620	Crystal growth and optical properties of non-UV absorption K2Al2B2O7 crystals Liu CL, Liu LJ, Zhang X, Wang LR, Wang GL, Chen CT
621 - 624	Study on defects in hydrothermal-grown KBe2BO3F2 crystals Yu JQ, Liu LJ, Wang XY, Zhou HT, He XL, Zhang CL, Zhou WN, Chen CT
625 - 628	Enhancement of the CsB3O5(CBO) crystal quality by fast cooling after crystal growth Wang ZM, Rajesh D, Yoshimura M, Shimatani H, Kitaoka Y, Mori Y, Sasaki T
629 - 631	Crystal growth and nonlinear optical coefficients of Bi2ZnOB2O6 Li F, Pan SL
632 - 635	Optical properties of Nd3+-doped La2CaB10O19 crystals with different Nd3+ concentrations Wu Y, Zhang JX, Zhang GC, Fu PZ, Wu YC
636 - 641	Growth and characterization of LCOB and NdLCOB single crystals for laser applications Kumar RA, Dhanasekaran R
642 - 644	Predicting refractive indices of the borate optical crystals Qin FL, Li RK
645 - 648	Growth and characterization of congruent lithium isotope niobate ((LiNbO3)-Li-7) single crystal Zhang NN, Wang JY, Yao SH, Hu XB, Zhang HJ, Ayala AP, Guedes I
649 - 652	Crystal growth, VTE treatment, and characterizations of Nd-doped LiTaO3 Wu CC, Hsu WT, Chen ZB, Choubey RK, Lan CW
653 - 656	Growth of Zr co-doped Tm:LiNbO3 single crystal for improvement of photoluminescence property in blue wavelength range Shur JW, Choi KH, Yoon DH
657 - 660	Influence of ZnO codoping on growth and holographic properties of Ru/Fe double-doped LiNbO3 single crystals Fan YX, Xu C, Wang YJ, Xia SX, Guan CX, Cao LC
661 - 664	Growth and nonvolatile holographic storage properties of Hf:Ce:Cu:LiNbO3 crystals Xu ZP, Xu C, Leng XS, Ben YZ, Zhao Y, Xu YH
665 - 668	Investigations on growth and two-wavelength holographic storage properties varied with RuO2 codoping in Fe:LiNbO3 crystals Xu C, Leng XS, Mo Y, Wang YJ, Cao LC, Yang CH, Xu YH
669 - 673	Growth and radiation resistant properties of 2.7-2.8 mu m Yb,Er:GSGG laser crystal Sun DL, Luo JQ, Zhang QL, Xiao JZ, Liu WP, Wang SF, Jiang HH, Yin ST
674 - 678	Simulation and experiment on laser-heated pedestal growth of chromium-doped yttrium aluminum garnet single-crystal fiber Chang CL, Huang SL, Lo CY, Huang KY, Lan CW, Cheng WH, Chen PY
679 - 682	Growth and characterization of large SrMoO4 crystals Li Z, Wang JY, Zhang HJ, Yu HH, Pan ZB
683 - 686	Synthesis, structural and vibrational properties of microcrystalline RbNd(MoO4)(2) Atuchin VV, Chimitova OD, Gavrilova TA, Molokeev MS, Kim SJ, Surovtsev NV, Bazarov BG
687 - 690	Crystal growth of PbWO4:Nd3+ and PbMoO4:Nd3+ crystals and their characterization by means of optical and dielectric relaxation spectroscopy Gorobets YN, Kosmyna MB, Luchechko AP, Nazarenko BP, Puzikov VM, Shekhovtsov AN, Sugak DY
691 - 694	Passively Q-switched Nd:Gd0.63Y0.37VO4/Cr4+:YAG microchip laser Zhuang SD, Yu HH, Wang ZP, Zhang HJ, Wang JY, Guo L, Chen LJ, Zhao YG, Xu XG
695 - 699	Hot zone design for controlled growth to mitigate cracking in laser crystal growth Zhang H, Zheng LL, Fang HS
700 - 702	The rapid growth of large-scale KDP single crystal in brief procedure Zhuang XX, Ye LW, Zheng GZ, Su GB, He YP, Lin XQ, Xu ZH
703 - 707	Dynamic global model of oxide Czochralski process with weighing control Mamedov VM, Vasiliev MG, Yuferev VS
708 - 712	Single crystal preparation and properties of the AgGaGeS4-AgGaGe3Se8 solid solution Shevchuk MV, Atuchin VV, Kityk AV, Fedorchuk AO, Romanyuk YE, Calus S, Yurchenko OM, Parasyuk OV
713 - 716	Growth and characterization of AgGa1-xInxSe2 crystals with high indium contents Wan SQ, Zhu SF, Zhao BJ, Chen BJ, He ZY, Xu JH
717 - 720	Growth and thermal annealing effect on infrared transmittance of ZnGeP2 single crystal Hang GD, Tao XT, Wang SP, Liu GD, Shi Q, Jiang MH
721 - 724	Growth and annealing characterization of ZnGeP2 crystal Yang YJ, Zhang YJ, Gu QT, Zhang HJ, Tao XT
725 - 728	Influence of annealing on optical and electrical properties of ZnGeP2 single crystals Fan Q, Zhu SF, Zhao BJ, Chen BJ, He ZY, Cheng J, Xu T
729 - 732	Chemical etching orientation of ZnGeP2 single crystals Cheng J, Zhu SF, Zhao BJ, Chen BJ, He ZY, Fan Q, Xu T
733 - 736	Growth and spectroscopic characteristics of Er-doped CeF3 crystal Wang QG, Su LB, Li HJ, Zheng LH, Tang HL, Guo X, Xu J
737 - 740	Micro-pulling-down-method-grown Ce:LiCAF crystal for side-pumped laser amplifier Kouno M, Gabayno JL, Cadatal-Raduban M, Pham M, Yamanoi K, Estacio E, Garcia W, Nakazato T, Shimizu T, Sarukura N, Suyama T, Fukuda K, Kim KJ, Yoshikawa A, Saito F
741 - 744	Laser-induced nucleation in protein crystallization: Local increase in protein concentration induced by femtosecond laser irradiation Iefuji N, Murai R, Maruyama M, Takahashi Y, Sugiyama S, Adachi H, Matsumura H, Murakami S, Inoue T, Mori Y, Koga Y, Takano K, Kanaya S
745 - 750	Unidirectional growth of organic nonlinear optical L-arginine maleate dihydrate single crystal by Sankaranarayanan-Ramasamy (SR) method and its characterization Charoen-In U, Ramasamy P, Manyum P
751 - 756	Investigations on the solubility, growth, structural, optical, mechanical, dielectric and SHG behaviour of ammonium acetate doped ammonium dihydrogen phosphate crystals Rajesh P, Boopathi K, Ramasamy P
757 - 761	Investigations on the SR method growth, etching, birefringence, laser damage threshold and dielectric characterization of sodium acid phthalate single crystals Senthil A, Ramasamy P, Verma S
762 - 767	Growth and characterization of alpha and gamma-glycine single crystals Srinivasan TP, Indirajith R, Gopalakrishnan R
768 - 773	Growth and characterization of 2-Methylimidazolium D-tartrate single crystal Srinivasan TP, Anandhi S, Gopalakrishnan R
774 - 779	Growth and characterization of an adduct 4-aminobenzoic acid with nicotinic acid Anandhi S, Rajalakshmi M, Shyju TS, Gopalakrishnan R
780 - 783	Colloidal crystallization by a centrifugation method Suzuki Y, Sawada T, Tamura K
784 - 787	Growth and characterization of Ce-doped Ca-3(BO3)(2) crystals for neutron scintillator Fujimoto Y, Yanagida T, Tanaka H, Yokota Y, Kawaguti N, Fukuda K, Totsuka D, Watanabe K, Yamazaki A, Yoshikawa A
788 - 790	Response-time-improved ZnO scintillator by impurity doping Kano M, Wakamiya A, Sakai K, Yamanoi K, Cadatal-Raduban M, Nakazato T, Shimizu T, Sarukura N, Ehrentraut D, Fukuda T
791 - 795	Crystal growth, Nd distribution and luminescence properties of (Na0.425+xLu0.575-x-yNdy)F2.15-2x single crystals Furuya Y, Tanaka H, Fukuda K, Kawaguchi N, Yokota Y, Yanagida T, Chani V, Nikl M, Yoshikawa A
796 - 799	Crystal growth and scintillation properties of Ce3+-doped KGd2Cl7 Zhuravleva M, Yang K, Green A, Melcher CL
800 - 804	Growth and defect structure of seeded solution grown Sc-substituted barium hexaferrite crystals using different seed orientation Dubs C, Krausslich J, Gornert P
805 - 808	Growth of bulk gadolinium pyrosilicate single crystals for scintillators Gerasymov I, Sidletskiy O, Neicheva S, Grinyov B, Baumer V, Galenin E, Katrunov K, Tkachenko S, Voloshina O, Zhukov A
809 - 812	Crystal growth and scintillation properties of Cs3CeC16 and CsCe2Cl7 Zhuravleva M, Yang K, Melcher CL
813 - 819	Growth and emission properties of Sc, Pr, and Ce co-doped Lu3Al5O12 epitaxial layers for scintillators Kucera M, Nikl M, Prusa P, Mares JA, Nitsch K, Hanus M, Onderisinova Z, Kucerkova R
820 - 822	NaI(Tl) and CsI(Tl) scintillation crystal growth by skull method Taranyuk V, Gektin A, Kisil I, Kolesnikov A
823 - 827	Growth of Y2O3, Sc2O3 and Lu2O3 crystals by the micro-pulling-down method and their optical and scintillation characteristics Fukabori A, Chani V, Kamada K, Yanagida T, Yokota Y, Moretti F, Kawaguchi N, Yoshikawa A
828 - 832	Crystal growth and luminescence properties of Ti-doped LiAlO2 for neutron scintillator Pejchal J, Fujimoto YU, Chani V, Moretti F, Yanagida T, Nikl M, Yokota Y, Beitlerova A, Vedda A, Yoshikawa A
833 - 835	Crystal growth and scintillation properties of Cs3EuI5 crystals Yang K, Zhuravleva M, Melcher CL
836 - 838	Growth and thermal properties of Sr3NbGa3Si2O14 single crystals Shen H, Xu JY, Wu AH, Jin M
839 - 845	Growth and characterization of piezo-/ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3-Bi(Zn1/2Ti1/2)O-3 ternary single crystals Belan RA, Tailor HN, Long XF, Bokov AA, Ye ZG
846 - 850	Recent developments on high Curie temperature PIN-PMN-PT ferroelectric crystals Zhang SJ, Li F, Sherlock NP, Luo J, Lee HJ, Xia R, Meyer RJ, Hackenberger W, Shrout TR
851 - 855	MPB design and crystal growth of PMN-PT-PZ relaxor ferroelectrics Li Q, Zhang YL, Xia ZG, Chu XC
856 - 859	Growth and pyroelectric properties of rhombohedral 0.21Pb(In1/2Nb1/2)O-3-0.49Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) ternary single crystals Liu LH, Wu X, Wang S, Di WN, Lin D, Zhao XY, Luo HS
860 - 864	Growth and characterization of (Pb, La)(Zr, Sn, Ti)O-3 single crystals Li YY, Li Q, Wang L, Yang Z, Chu XC
865 - 869	Effect of annealing on defect and electrical properties of Mn doped Pb(Mg1/3Nb2/3)O-3-0.28PbTiO(3) single crystals Wu X, Liu LH, Li XB, Zhang QH, Ren B, Lin D, Zhao XY, Luo HS, Huang YL
870 - 873	Electric properties of Mn doped 0.95Na(0.5)Bi(0.5)TiO(3)-0.05BaTiO(3) crystal after different annealing processes Zhang QH, Li XB, Sun RB, Wu X, Ren B, Zhao XY, Luo HS
874 - 878	Van Vleck paramagnetism in lead ytterbium niobate and tantalate single crystals Talik E, Szubka M, Kulpa M, Kania A
879 - 883	Growth and properties of highly oriented lead-free Mn-doped NaNbO3-BaTiO3 piezoelectric thin films prepared by chemical solution deposition Sakamoto W, Hamazaki YI, Maiwa H, Morioka H, Saito K, Moriya M, Yogo T
884 - 889	High temperature ReCOB piezocrystals: Recent developments Zhang SJ, Yu FP, Xia R, Fei YT, Frantz E, Zhao X, Yuan DR, Chai BHT, Snyder D, Shrout TR
890 - 894	The compositional segregation, phase structure and properties of Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystal Zhang YY, Li XB, Liu DA, Zhang QH, Wang W, Ren B, Lin D, Zhao XY, Luo HS
895 - 899	Growth and domain structures of novel piezoelectric crystals Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 Xu GS, Yang DF, Li JB
900 - 903	Effect of SiO2 on Bi12SiO20 crystals grown by hydrothermal technology He XL, Zhou WN, Zhang CL, Zhou HT, Hu ZG, Huo HD, Zuo YB, Lu FH, Wang JL, Qin SJ, Li DP, Zhang HX, Chen YX
904 - 907	Growth of tourmaline single crystals containing transition metal elements in hydrothermal solutions Setkova T, Shapovalov Y, Balitsky V
908 - 911	Development of modified micro-pulling-down method for bromide and chloride single crystals Yokota Y, Kawaguchi N, Fukuda K, Yanagida T, Yoshikawa A, Nikl M
912 - 915	Effect of Al doping on the microstructure properties of YMn1-xAlxO3 Zhang AM, Zhu WH, Wu XS, Qing B
916 - 919	Growth of high-temperature phase KLu2F7 single crystals using quenching process Tanaka H, Furuya Y, Sugiyama M, Fujimoto Y, Chani V, Yokota Y, Yanagida T, Kawazoe Y, Yoshikawa A
920 - 923	Growth and spectroscopic properties of Yb:BSO single crystal Zhang Y, Xu JY, Shao P
924 - 926	Floating-zone growth of Na(0.8-y)A(y)CoO(2) (A=Ca, Sr) single crystals Prabhakaran D, Boothroyd AT
927 - 931	Growth rate dependence of the NdFeO3 single crystal grown by float-zone technique Wang YB, Cao SX, Shao MJ, Yuan SJ, Kang BJ, Zhang JC, Wu AH, Xu J
932 - 935	Growth and surface morphology of ErFeO3 single crystal Chang FF, Yuan SJ, Wang YB, Zhan S, Cao SX, Wu AH, Xu J
936 - 941	Phase equilibrium of Bi2O3-Fe2O3 pseudo-binary system and growth of BiFeO3 single crystal Lu J, Qiao LJ, Fu PZ, Wu YC
942 - 946	Floating zone crystal growth of selected R2PdSi3 ternary silicides Xu Y, Frontzek M, Mazilu I, Loser W, Behr G, Buchner B, Liu L
947 - 950	Single crystal growth, magnetic properties and Schottky anomaly of HoFeO3 orthoferrite Shao MJ, Cao SX, Wang YB, Yuan SJ, Kang BJ, Zhang JC, Wu AH, Xu J
951 - 953	Mechanism of the abnormal thermal expansion of nearly stoichiometric LiNbO3 Yao SH, Wang JY, Liu H, Yan T, Yu DH, Chen YF
954 - 957	Synthesis, growth and some physical properties of new orthoborates ScBaNa(BO3)(2) and YBaNa(BO3)(2) Svetlyakova T, Kononova N, Kokh A, Urakaev F, Filatov S, Bubnova R, Kokh K
958 - 961	Crystal growth of Ca3SiO4Br2: New photoluminescence bromosilicate host Xia ZG, Li Q, Li GW, Xiong M, Liao LB
962 - 965	Growth and characterization of Ba(Al,Ga)BO3F2 crystal Wang JU, Yue YC, Yao JY, Hu ZG
966 - 970	New oxide-ion conductor Ho-2(Ti1.904Ho0.096)O-6.952: structure and conductivity Abrantes JCC, Savvin SN, Shlyakhtina AV, Shcherbakova LG, Nunez P
971 - 973	Flux growth of a potential nonlinear optical crystal BaMgBO3F Zhao J, Xia MJ, Li RK
974 - 978	Investigations on crystal growth, structural, optical, dielectric, mechanical and thermal properties of a novel optical crystal: Nicotinium nitrate monohydrate Dhanaraj PV, Rajesh NP
979 - 982	Single crystal growth by axial vibrational control technique in Czochralski configuration Avetissov IC, Sadovskii AP, Sukhanova EA, Zharikov EV
983 - 986	Growth and crystallinity of shaped and multiple sapphire crystals by a micro-pulling-down method Yokota Y, Chani V, Sato M, Tota K, Onodera K, Yanagida T, Yoshikawa A
987 - 990	Sublimation growth and vibrational microspectrometry of alpha-MoO3 single crystals Atuchin VV, Gavrilova TA, Grigorieva TI, Kuratieva NV, Okotrub KA, Pervukhina NV, Surovtsev NV
991 - 994	Flux growth and characterization of Gd2GeMoO8 and Yb3+:Gd2GeMoO8 crystals Xu L, Zhang QL, Zhou WL, Ding LH, Yin ST
995 - 999	Challenges in the crystal growth of Li2CuO2 and LiMnPO4 Wizent N, Behr G, Loser W, Buchner B, Klingeler R
1000 - 1004	Single crystal growth and surface chemical stability of KPb2Br5 Atuchin VV, Isaenko LI, Kesler VG, Tarasova AY
1005 - 1008	Crystal growth of CsCl-type Yb0.24Sn0.76Ru Klimczuk T, Wang CH, Xu Q, Lawrence J, Durakiewicz T, Ronning F, Llobet A, Bauer ED, Griveau JC, Sadowski W, Zandbergen HW, Thompson JD, Cava RJ
1009 - 1012	Single crystal growth of Eu2CuSi3 intermetallic compound by the floating-zone method Cao CD, Loser W, Behr G, Klingeler R, Leps N, Vinzelberg H, Buchner B
1013 - 1015	A novel periodic dendrite microstructure in Al-La binary alloy Zheng YH, Wang ZD
1016 - 1020	Single crystal growth of Al-based intermetallic phases being approximants to quasicrystals Gille P, Bauer B, Hahne M, Smontara A, Dolinsek J
1021 - 1025	Studies on the synthesis, growth, crystal structure, and physical properties of a novel nonlinear optical crystal: Glycine 3,5-dihydroxybenzoic acid Babu GA, Mohanapriya SK, Ramasamy P, Chandramohan A
1026 - 1029	Growth of homogeneous semiconductor mixed crystals by the traveling liquidus-zone method Kinoshita K, Yoda S
1030 - 1033	Ammonothermal growth of high-quality GaN crystals on HVPE template seeds Wang BG, Bliss D, Suscavage M, Swider S, Lancto R, Lynch C, Weyburne D, Li T, Ponce FA
1034 - 1038	Homogeneous TMF melt-solution mixing during dipping LPE of (Hg,Cd)Te layers Bitterlich H, Frank-Rotsch C, Miller W, Rehse U, Rudolph P
1039 - 1042	Crucible-free pulling of germanium crystals Wunscher M, Ludge A, Riemann H
1043 - 1047	Self-flux growth of large EuCu2Si2 single crystals Cao CD, Loser W, Behr G, Klingeler R, Leps N, Vinzelberg H, Buchner B
1048 - 1052	Magnetic field controlled single crystal growth and surface modification of titanium alloys exposed for biocompatibility Hermann R, Uhlemann M, Wendrock H, Gerbeth G, Buchner B
1053 - 1056	Crystal growth of spin-ice pyrochlores by the floating-zone method Prabhakaran D, Boothroyd AT
1057 - 1061	Germanium-silicon single crystal growth by the axial heat processing (AHP) technique Dario A, Sicim HO, Balikci E
1062 - 1066	Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector Du YY, Jie WQ, Wang T, Xu YD, Yin LY, Yu PF, Zha GQ
1067 - 1070	Crystalline phase in Alq(3) films grown by the hot-wall method Seto S, Yamada S, Kitazaki A, Sebald K, Ruckmann I, Gutowski J
1071 - 1074	Characterization of dislocations in monoclinic hen egg-white lysozyme crystals by synchrotron monochromatic-beam X-ray topography Sawaura T, Fujii D, Shen M, Yamamoto Y, Wako K, Kojima K, Tachibana M
1075 - 1079	In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source Grillenberger H, Knerer D, Magerl A
1080 - 1084	Nucleation control and crystallization of L-glutamic acid polymorphs by swift cooling process and their characterization Srinivasan K, Dhanasekaran P
1085 - 1088	Effects of temperature, pressure, and pH on the solubility of triclinic lysozyme crystals Suzuki Y, Konda E, Hondoh H, Tamura K
1089 - 1094	Role of Ni in the controlled growth of single crystal AlN triangular microfibers: Morphology evolvement, growth kinetics and photoluminescence Jiang LB, Zuo SB, Wang WJ, Li H, Jin SF, Wang SC, Chen XL
1095 - 1100	Unique three-dimensional nano-/micro-textured surfaces consisting of highly crystalline Nb2O5 nanotubes Suzuki S, Teshima K, Ishizaki T, Lee S, Yubuta K, Shishido T, Oishi S
1101 - 1104	SWNT growth on Al2Ox/Co/Al2Ox multilayer catalyst using alcohol gas source method in high vacuum Mizutani Y, Sato K, Maruyama T, Naritsuka S
1105 - 1108	Bi catalyzed VLS growth of PbTe (0 0 1) nanowires Volobuev VV, Stetsenko AN, Mateychenko PV, Zubarev EN, Samburskaya T, Dziawa P, Reszka A, Story T, Sipatov AY
1109 - 1112	Selective MOVPE growth of InAs QDs using double-cap procedure Kawashima F, Kobie R, Suzuki Y, Shimomura K
1113 - 1116	Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness Tani K, Fuchi S, Mizutani R, Ujihara T, Takeda Y
1117 - 1120	A mild solvothermal route to kesterite quaternary Cu2ZnSnS4 nanoparticles Cao M, Shen Y
1121 - 1124	Synthesis and characterization of high crystallinity, well-defined morphology stoichiometric lithium niobate nanocrystalline Zhan J, Liu DX, Du W, Wang ZY, Wang P, Cheng HF, Huang BB, Jiang MH
1125 - 1128	Crystal structural premises to epitaxial contacts for a series of mercury-containing compounds Atuchin VV, Borisov SV, Magarill SA, Pervukhina NV
1129 - 1133	In-situ microscope observation of the growth of 2D colloidal crystals in a sessile drop Yu J, Gao L, Yan QF, Shen DZ, Wong CC
1134 - 1138	In situ analysis of the influence of convection during the initial transient of planar solidification Bogno A, Reinhart G, Buffet A, Thi HN, Billia B, Schenk T, Mangelinck-Noel N, Bergeon N, Baruchel J
1139 - 1142	Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures Ninoi K, Ju GX, Kamiya H, Fuchi S, Tabuchi M, Takeda Y
1143 - 1146	X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE Ju GX, Ninoi K, Kamiya H, Fuchi S, Tabuchi M, Takeda Y
1147 - 1150	Epitaxial growth of ZnO nanocrystals at ZnWO4(0 1 0) cleaved surface Atuchin VV, Galashov EN, Kozhukhov AS, Pokrovsky LD, Shlegel VN
1151 - 1156	A new insight on crystalline strain and defect features by STEM-ADF imaging Grillo V, Rossi F
1157 - 1163	Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging Danilewsky AN, Wittge J, Croell A, Allen D, McNally P, Vagovic P, Rolo TD, Li Z, Baumbach T, Gorostegui-Colinas E, Garagorri J, Elizalde MR, Fossati MC, Bowen DK, Tanner BK
1164 - 1166	Structural characterization of pure and doped GaSe by nonlinear optical method Andreev YM, Kokh KA, Lanskii GV, Morozov AN
1167 - 1170	Three-dimensional mapping of tellurium inclusions in CdZnTe crystals by means of improved optical microscopy Zambelli N, Marchini L, Zha M, Zappettini A
1171 - 1174	Growth and characterization of Al-doped CsLiB6O10 crystal Yu XS, Hu ZG
1175 - 1178	Optical and scintillation properties of Sr7%:Ce15%:GdF3 single crystal Fukabori A, Kamada K, Yanagida T, Chani V, Aoki K, Yokota Y, Maeo S, Nikl M, Yoshikawa A
1179 - 1183	Stacking fault in Bi2Te3 and Sb2Te3 single crystals Jariwala B, Shah DV