Journal of Crystal Growth, Vol.318, No.1, 703-707, 2011
Dynamic global model of oxide Czochralski process with weighing control
A dynamic model of oxide Czochralski growth with weighing control has been developed for the first time. A time-dependent approach is used for the calculation of temperature fields in different parts of a crystallization set-up and convection patterns in a melt, while internal radiation in crystal is considered in a quasi-steady approximation. A special algorithm is developed for the calculation of displacement of a triple point and simulation of a crystal surface formation. To calculate variations in the heat generation, a model of weighing control with a commonly used PID regulator is applied. As an example, simulation of the growth process of gallium-gadolinium garnet (GGG) crystals starting from the stage of seeding is performed. (C) 2010 Elsevier B.V. All rights reserved.
Keywords:Computer simulation;Heat transfer;Interfaces;Czochralski method;Oxides;Dielectric materials