Journal of Crystal Growth, Vol.318, No.1, 418-422, 2011
An X-ray diffraction technique for analyzing structural defects including microstrain in nitride materials
An X-ray diffraction analysis technique incorporating microstrain broadening is introduced to characterize nitride materials. The technique is tested using GaN and AlN samples prepared with different growth processes. The computation technique relies on simultaneously analyzing the X-ray profiles from a series of crystal planes and extracting the various broadening effects. An analysis ignoring the mircostrain term will often overestimate the effects of lattice tilt and lateral coherence length. The extended analysis results in much better fits, especially for planes with large Bragg angles. Improved estimates give a more complete picture of the structural properties of nitride materials. Published by Elsevier B.V.