The generation mechanism of pinhole defects in the Czochralski (CZ)-grown silicon (Si) single crystals was clarified by in-situ observations of bubble formation at the interface between Si melt and a silica glass crucible in a small experimental apparatus. The nucleation and growth of bubbles were facilitated by creating small cavities on the inner wall of the crucible. Si melting was conducted in an argon (Ar) atmosphere, and the pressure was maintained at either 100 Torr or close to a vacuum (no Ar-gas flow). It was found that in the presence of Ar, bubbles formed in the cavities immediately after the cavities came in contact with the melt. However, no bubbles formed in a vacuum in the experimental apparatus. These results indicate that the bubbles formed in the cavities are largely filled with Ar, and the initial bubble volumes are nearly comparable with those of the cavities. In an initial stage of expansion of a bubble, estimated volumes changed nearly in accordance with the Boyle-Charles law. Further, participation of SiO gas in bubble growth may explain the deviation of the bubble volume from the theoretical value anticipated if only At gas was involved in the bubble growth. (C) 2010 Elsevier B.V. All rights reserved.