We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the m-c interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the m-c interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process. (C) 2010 Elsevier B.V. All rights reserved.