In the present work homoepitaxial Ge layers were deposited by means of metal organic vapor phase epitaxy (MOVPE) on Ge using iso-butyl germane (iBuGe) as a metal organic precursor. Layers of different thicknesses were grown by varying the deposition temperature between 550 and 700 degrees C on n- and p-type Ge substrates. The films were found to be intrinsically p-type with high carrier concentration, but using AsH(3) it was possible to achieve n-type doping. TEM and X-ray diffraction were used to assess the good crystallographic quality of the layers. By depositing a p-type layer onto an n-type Ge substrate or, vice versa, an n-type layer on a p-type Ge substrate is was possible to realize p/n (or n/p) junctions. Mesa structures were realized in order to perform electrical characterizations of the junctions. (C) 2010 Elsevier B.V. All rights reserved.