Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.24, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (115 articles)

1081 - 1087	Characterizing field emission from individual carbon nanotubes at small distances Hii KF, Vallance RR, Chikkamaranahalli SB, Menguc MP, Rao AM
1088 - 1093	Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition, using O-2 plasma and N2O plasma Kim S, Kim J, Choi J, Kang HS, Jeon H, Bae C
1094 - 1097	Neutron irradiation effects in undoped n-AlGaN Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Boiko VM, Merkurisov DI, Pearton SJ
1098 - 1103	Band structures of double-walled carbon nanotubes Ho YH, Ho GW, Wu SJ, Lin MF
1104 - 1108	Annealing effect on the surface plasmon resonance absorption of a Ti-SiO2 nanoparticle composite Zhao JP, Chen ZY, Cai XJ, Rabalais JW
1109 - 1116	Fabrication of ultrathin (similar to 100 nm), low-index nanoporous silica films for photonic devices: Role of substrate adhesion on the film thickness Ojha M, Gill WN, Plawsky JL, Cho W
1117 - 1122	Self-aligned via and trench for metal contact in III-V semiconductor devices Zheng JF, Demir HV, Sabnis VA, Fidaner O, Harris JS, Miller DAB
1123 - 1126	Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics Lai FI, Kuo SY, Chang YH, Huang HW, Chang CW, Yu CC, Lin CF, Kuo HC, Wang SC
1127 - 1130	X-ray diffraction analysis of interdiffusion in AlxIn1-xAsySb1-y/GaSb multilayers Forrest RL, Stokes DW, Li JH, Lukic R, Golding TD
1131 - 1138	Progress in the physical modeling of carrier illumination Dortu F, Clarysse T, Loo R, Pawlak B, Delhougne R, Vandervorst W
1139 - 1146	Towards nondestructive carrier depth profiling Clarysse T, Vandervorst W, Bakshi M, Nicolaides L, Salnik A, Opsal J
1147 - 1150	Photoelectron spectroscopic analysis of Hf-silicate/SiO2/Si stacks deposited by atomic layer chemical vapor deposition Kim J, Yong KJ
1151 - 1155	Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator Di ZF, Zhang M, Liu WL, Shen QW, Luo SH, Song ZT, Lin CL, Chu PK
1156 - 1161	Quantum size effect of valence band plasmon energies in Si and SnOx nanoparticles Nienhaus H, Kravets V, Koutouzov S, Meier C, Lorke A, Wiggers H, Kennedy MK, Kruis FE
1162 - 1177	Integrated model for chemically enhanced physical vapor deposition of tantalum nitride-based films Li N, Brenner PW, Ruzic DN
1178 - 1184	Investigation of thermophoretic protection with speed-controlled particles at 100, 50, and 25 mTorr Kim JH, Fissan H, Asbach C, Yook SJ, Pui DYH, Orvek KJ
1185 - 1189	Approach to optimizing n-SiC Ohmic contacts by replacing the original contacts with a second metal Ervin MH, Jones KA, Lee U, Wood MC
1190 - 1196	Vertically aligned carbon nanotube field emission devices fabricated by furnace thermal chemical vapor deposition at atmospheric pressure Wei S, Kang WP, Davidson JL, Choi BK, Huang JH
1197 - 1201	Reactive ion etch damage on GaN and its recovery Fan Q, Chevtchenko S, Ni XF, Cho SJ, Yun F, Morkoc H
1202 - 1209	Monte Carlo simulation of process parameters in electron beam lithography for thick resist patterning Zhou JY, Yang XM
1210 - 1214	Visible light photocatalysis with nitrogen-doped titanium dioxide nanoparticles prepared by plasma assisted chemical vapor deposition Buzby S, Barakat MA, Lin H, Ni C, Rykov SA, Chen JG, Shah SI
1215 - 1218	Sub-10-nm high aspect ratio patterning of ZnO in a 500 mu m main field Saifullah MSM, Subramanian KRV, Anderson D, Kang DJ, Huck WTS, Jones GAC, Welland ME
1219 - 1225	Data processing system for maskless lithography toward 65 nm node and below Hoshino H, Machida Y
1226 - 1229	Ultrahigh-aspect-ratio, SiO2 deeply etched periodic structures with smooth surfaces for photonics applications Hosomi K, Kikawa T, Goto S, Yamada H, Katsuyama T, Arakawa Y
1230 - 1233	Nanostructure evolution of YBa2Cu3Ox thin films grown by pulsed-laser glancing-angle deposition Wang HH, Zhao YP
1234 - 1237	Lithographic characterization of the flare in the Berkeley 0.3 numerical aperture extreme ultraviolet microfield optic Cain JP, Naulleau PP, Gullikson EM, Spanos CJ
1238 - 1247	Damage of ultralow k materials during photoresist mask stripping process Hua XF, Kuo MS, Oehrlein GS, Lazzeri P, Iacob E, Anderle M, Inoki CK, Kuan TS, Jiang P, Wu WL
1248 - 1253	Directed growth of horizontal silicon nanowires by laser induced decomposition of silane Abed H, Charrier A, Dallaporta H, Safarov V, Jamgotchian H, Tonneau D
1254 - 1258	Analysis of atomic diffusion mechanism of interconnect voiding failure caused by stress-induced migration Aoyagi M
1259 - 1265	Controlling interface reactivity and Schottky barrier height in Au/ZnSe(001) junctions Pelucchi E, Kumar D, Lazzarino M, Rubini S, Franciosi A
1266 - 1270	Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure Cho IH, Park TS, Choe JD, Cho HJ, Park D, Shin H, Park BG, Lee JD, Lee JH
1271 - 1277	Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories Punchaipetch P, Ichikawa K, Uraoka Y, Fuyuki T, Tomyo A, Takahashi E, Hayashi T
1278 - 1282	Fabrication of organic light-emitting devices on flexible substrates using a combined roller imprinting and photolithography-patterning technique Kao PC, Chu SY, Zhan CY, Hsu LC, Liao WC
1283 - 1291	Implementation of an imprint damascene process for interconnect fabrication Schmid GM, Stewart MD, Wetzel J, Palmieri F, Hao JJ, Nishimura Y, Jen K, Kim EK, Resnick DJ, Liddle JA, Willson CG
1292 - 1296	Ion and neutral transportation consideration in etching of thin Si3N4 in high aspect ratio structures for aspect ratio independent etching Bai KH, Chi KK, Kim MC
1297 - 1302	Oxygen pressure dependence of copper ion transport in SiO2 dielectrics Shepherd LP, Mathew A, McCandless BE, Willis BG
1303 - 1307	Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrode Jeon CM, Park KY, Lee JH, Lee JH, Lee JL
1308 - 1310	GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage Lew KL, Yoon SF, Wang H, Wicaksono S, Gupta JA, McAlister SP
1311 - 1317	Deposition of nanostructured Si-C-N superhard coatings by rf magnetron sputtering Mishra SK, Gaur H, Rupa PKP, Pathak LC
1318 - 1321	Growth and characterization of a high-purity ZnO nanoneedles film prepared by microwave plasma deposition Lin TC, Wang CY, Chan LH, Hsiao DQ, Shih HC
1322 - 1326	dc thermal plasma synthesis and properties of zinc oxide nanorods Liao SC, Lin HF, Hung SW, Hu CT
1327 - 1332	Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films Park JS, Kang SW, Kim H
1333 - 1336	Oxidation of silicon nanowires Shir D, Liu BZ, Mohammad AM, Lew KK, Mohney SE
1337 - 1340	Bias-enhanced lateral photoelectrochemical etching of GaN for the fabrication of undercut micromachined system structures Yang B, Fay P
1341 - 1343	Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack Joo MS, Park CS, Cho BJ, Balasubramanian N, Kwong DL
1344 - 1352	Modeling dual inlaid feature construction Stout PJ, Rauf S, Nagy A, Ventzek PLG
1353 - 1357	High current field emission behavior of carbon nanofiber film: Adsorbate effects Park KH, Lee S, Koh KH
1358 - 1361	Field emission from amorphous GaN deposited on Si by dc sputtering Ye F, Xie EQ, Pan XJ, Li H, Duan HG, Jia CW
1362 - 1364	Field emission from multiwall carbon nanotubes prepared by electrodeposition without the use of a dispersant Lyth SM, Oyeleye F, Curry RJ, Davis J, Silva SRP
1365 - 1370	Modeling the suppression of boron diffusion in Si/SiGe due to carbon incorporation Rizk S, Haddara YM, Sibaja-Hernandez A
1371 - 1376	Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy Kimura K, Kobayashi K, Yamada H, Matsushige K, Usuda K
1377 - 1383	Ultraviolet curing imprint lithography on flexible indium tin oxide substrates Chung YC, Chiu YH, Liu HJ, Chang YF, Cheng CY, Hong FCN
1384 - 1397	Nanoscale device architecture to reduce leakage currents through quantum-mechanical simulation Sarab AAP, Datta D, Dasgupta S
1398 - 1401	Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on SiO2/Si substrates for II-type attenuator applications Cuong ND, Kim DJ, Kang BD, Kim CS, Yoon SG
1402 - 1404	Direct nanoimprint of inorganic-organic hybrid glass Okinaka M, Tsukagoshi K, Aoyagi Y
1405 - 1408	Formation of nickel nanoparticles on amorphous silicon thin film and its effect on crystallization Lee SB, Choi DK, Phillipp F, Kim YM, Kim YJ
1409 - 1412	Cleaning silicon nitride gratings with liquid immersion Robertson-Tessi M, Wild RJ, Cronin AD, Savas T
1413 - 1416	Observation of quantum interference effect in solids Tavkhelidze A, Bibilashvili A, Jangidze L, Shimkunas A, Mauger P, Rempfer GF, Almaraz L, Dixon T, Kordesch ME, Katan N, Walitzki H
1417 - 1422	Role of reactive surface oxygen in causing enhanced copper ionization in a low-k polymer Achanta RS, Gill WN, Plawsky JL, Haase G
1423 - 1427	Emission characteristics of printed carbon nanotube cathodes after laser treatment Hosono A, Shiroishi T, Nishimura K, Abe F, Shen ZY, Nakata S, Okuda S
1428 - 1431	Thermal stability of chemical vapor deposition grown W and WNx thin films in low-k integration structure Jeon S, Yong K, Park SG, Rhee SW
1432 - 1435	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier Lee CW, Kim YT
1436 - 1439	Fabrication and characterization of Spindt-type field emission arrays coated with ZrC thin films Li HY, Ding MQ, Feng JJ, Li XH, Bai GD, Zhang FQ
1440 - 1443	Formation of nanostructured cobalt wires with Chinese caterpillar type structure Huang FT, Liu RS, Hu SF, Lee CL, Li AK
1444 - 1448	Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence Tan SK, Wee ATS
1449 - 1454	Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation Vengurlekar A, Balasubramanian S, Ashok S, Theodore D, Chi DZ
1455 - 1459	Large area all-dielectric planar chiral metamaterials by electron beam lithography Zhang W, Potts A, Bagnall DM, Davidson BR
1460 - 1463	Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition Lee JW, Kim SH, Kwak NJ, Lee YJ, Sohn HC, Kim JW, Sun HJ
1464 - 1469	Alternating phase shifted scattering bars for low k(1) trench pattering Mehta SS, Kumar R, Singh N, Suda H, Kubota T, Kimura Y, Kinoshita H, Wong TKS, Wei J
1478 - 1478	An International Journal Devoted to Microelectronics and Nanometer Structures - Preface Sullivan G
1479 - 1482	Gate dielectric on compound semiconductors by molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Passlack M
1483 - 1487	ErAs island-stacking growth technique for engineering textured Schottky interfaces Zimmerman JD, Gossard AC, Young AC, Miller MP, Brown ER
1488 - 1491	Molecular beam epitaxial growth of osmium silicides Cottier RJ, Amir FZ, Zhao W, Hossain K, Gorman BP, Golding TD, Anibou N, Donner W
1492 - 1495	Development of 6.00 A graded metamorphic buffer layers and high performance In0.86Al0.14As/In0.86Ga0.14As heterojunction bipolar transistor devices Cavus A, Sandhu R, Monier C, Cox C, Pascua D, Gutierrez-Aitken A, Noori A, Hayashi S, Goorsky M
1496 - 1499	Long-wavelength semiconductor saturable absorber mirrors using metamorphic InP grown on GaAs by molecular beam epitaxy Suomalainen S, Vainionpaa A, Tengvall O, Hakulinen T, Herda R, Karirinne S, Guina M, Okhotnikov OG
1500 - 1504	Reaction of molecular beam epitaxial grown AIN nucleation layers with SiC substrates Hoke WE, Torabi A, Hallock RB, Mosca JJ, Kennedy TD
1505 - 1509	Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S
1510 - 1513	Spin-polarized vertical-cavity surface-emitting laser: Epitaxial growth issues and device properties Holub M, Shin J, Chakrabarti S, Bhattacharya P
1514 - 1518	Effects of plasma conditions on properties of ZnO films grown by plasma-assisted molecular beam epitaxy Lee WCT, Miller P, Reeves RJ, Durbin SM
1519 - 1522	High performance self-organized InGaAs quantum dot lasers on silicon Mi Z, Yang J, Bhattacharya P, Chan PKL, Pipe KP
1523 - 1526	Size evolution of site-controlled InAs quantum dots grown by molecular beam epitaxy on prepatterned GaAs substrates Atkinson P, Bremner SP, Anderson D, Jones GAC, Ritchie DA
1527 - 1531	Growth optimization of InGaAs quantum wires for infrared photodetector applications Tsai CL, Xu CF, Hsieh KC, Cheng KY
1532 - 1535	InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy Pal D, Walker J, Towe E
1536 - 1539	Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy Fotkatzikis A, Freundlich A
1540 - 1543	Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy Ptak AJ, Friedman DJ, Kurtz S, Reedy RC, Young M, Jackrel DB, Yuen HB, Bank SR, Wistey MA, Harris JS
1544 - 1547	Molecular beam epitaxy of InP-based alloys for long-wavelength vertical cavity lasers Buell DA, Feezell D, Finland BO, Coldren L
1548 - 1552	Molecular beam epitaxy growth of midinfrared "W" light emitting diodes on InAs Kuznetsov VV, Wicks GW
1553 - 1555	Influence of Si doping on the performance of quantum dots-in-well photodetectors Attaluri RS, Annamalai S, Posani KT, Stintz A, Krishna S
1556 - 1558	Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications Sigmund J, Pavlidis D, Hartnagel HL, Benker N, Fuess H
1559 - 1563	Fabrication and molecular beam epitaxy regrowth of first-order, high contrast AlGaAs/GaAs gratings Wang CS, Morrison GB, Skogen EJ, Coldren LA
1564 - 1567	High performance GaAsSb/InP double heterojunction bipolar transistors grown-by gas-source molecular beam epitaxy Wu BR, Chu-Kung BF, Feng MT, Cheng KY
1568 - 1571	Study of the homoepitaxial growth of GaAs on (631) oriented substrates Cruz-Hernandez E, Rojas-Ramirez JS, Vazquez-Lopez C, Lopez-Lopez M, Pulzara-Mora A, Mendez-Garcia VH
1572 - 1576	Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)(3) Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM
1577 - 1580	Multistep fabrication of self-assembled unstrained quantum dashes Ukhanov AA, Bracker AS, Boishin G, Culbertson JC
1581 - 1586	Strain relaxation in the growth of planar InAs Eyink KG, Grazulis L, Pitz JJ, Shank J, Mahalingam K
1587 - 1590	Nanoscale selective area epitaxy of C-60 crystals on GaAs by molecular beam epitaxy Nishinaga J, Aihara T, Toda T, Matsutani F, Horikoshi Y
1591 - 1594	Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy Pulzara-Mora A, Melendez-Lira M, Falcony-Guajardo C, Lopez-Lopez M, Vidal MA, Jimenez-Sandoval S, Aguilar-Frutis MA
1595 - 1598	Photoresponsivity of ZnO Schottky barrier diodes Oh DC, Suzuki T, Hanada T, Yao T, Makino H, Ko HJ
1599 - 1603	Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs Chen YQ, Unuvar T, Moscicka D, Wang WI
1604 - 1606	Optical characterization of In0.27Ga0.73Sb and ln(x)Al(1-x)As(y)Sb(1-y) pitaxial layers for development of 6.2-angstrom-based heterojunction bipolar transistors Glaser ER, Magno R, Shanabrook BV, Tischler JG
1607 - 1612	Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors Klin O, Klipstein PC, Jacobsohn E, Saguy E, Shtrichman I, Raizman A, Weiss E
1613 - 1616	cw midinfrared "W" diode and interband cascade lasers Canedy CL, Bewley WW, Kim CS, Kim M, Lindle JR, Vurgaftman I, Meyer JR
1617 - 1621	Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers Yu SQ, Jin X, Johnson SR, Zhang YH
1622 - 1625	Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM
1626 - 1629	Molecular beam epitaxy grown 0.6 eV n/p/n lnPAs/InGaAs/InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant Wernsman B, Bird T, Sheldon M, Link S, Wehrer R
1630 - 1633	Carbon-doped high-mobility hole gases on (001) and (110) GaAs Gerl C, Schmult S, Wurstbauer U, Tranitz HP, Mitzkus C, Wegscheider W
1634 - 1638	Molecular, beam epitaxy and morphological studies of homoepitaxial layers on chemical mechanical polished InSb(100) and InSb(111)B substrates Vangala SR, Qian X, Grzesik M, Santeufemio C, Goodhue WD, Allen LP, Dallas G, Dauplaise H, Vaccaro K, Wang SQ, Bliss D
1639 - 1643	Tunneling through MnAs particles at a GaAs p(+)n(+) junction Bloom FL, Young AC, Myers RC, Brown ER, Gossard AC, Gwinn EG
1644 - 1648	Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy Rajaram R, Ney A, Farrow RFC, Parkin SSP, Solomon GS, Harris JS
1649 - 1655	Formation and optical properties of stacked CdSe self-assembled quantum dots on ZnxCdyMg1-x-ySe barriers Perez-Paz MN, Lu H, Shen AD, Tamargo MC
1656 - 1659	Growth of high quality InAs quantum-dot multilayer structures on InP for infrared photodetector applications Zhang ZH, Cheng KY
1660 - 1664	Formation and property of InSb self-assembled quantum dots on GaAsSb lattice matched to InP Wu BR, Cheng KY, Xu CF, Hsieh KC
1665 - 1667	Thin-capping-and-regrowth molecular beam epitaxial technique for quantum dots and quantum-dot molecules Suraprapapich S, Thainoi S, Kanjanachuchai S, Panyakeow S
1668 - 1670	Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate Fujita M, Suzuki R, Sasajima M, Kosaka T, Deesirapipat Y, Horikoshi Y
1671 - 1675	Growth of GaN films on GaAs substrates in an As-free environment Maksimov O, Fisher P, Du H, Acord JD, Weng X, Skowronski M, Heydemann VD