InSb was deposited on GaAsSb lattice matched to InP matrices using gas-source molecular beam epitaxy to form self-assembled quantum dots (SAQDs). The InSb critical thickness of the two-dimensional to three-dimensional growth was determined to be about 1 monolayer (ML). The off-normal streak angle analysis of the reflection high-energy electron diffraction patterns indicated that the facets of InSb SAQDs are of the {111} family. Transmission electron microscopy further confirmed that the InSb quantum dot has a truncated pyramid structure with {111} facets. The relationship between the dot density and indium deposition rates was analyzed using atomic force microscopy. The 80 K photoluminescence spectrum of a multiple-layer InSb/GaAsSb SAQD array with 1 ML nominal InSb thickness shows an emission peak wavelength of similar to 1.72 mu m. (c) 2006 American Vacuum Society.