We studied the quantum wire photodetector (QRIP) structures with an InGaAs quantum wires (QWRs) active region formed by the strain-induced lateral ordering (SILO) process. The InGaAs multiple layer QWR structure maintains a small total strain due to the strain-balanced nature of the SILO process. The effects of growth temperature and layer structures on the QWR formation are studied using photoluminescence and transmission electron microscope measurements. High-resolution x-ray diffraction studies on QRIP structures consisting of 20 QWR layers confirmed the strain-balanced property of SILO-based structures. (c) 2006 American Vacuum Society.