Epitaxial growth issues and device properties of an electrically injected, spin-polarized, vertical-cavity surface-emitting laser are discussed: Using the ferromagnetic semiconductor (Ga,Mn)As to introduce spin anisotropy via hole spin injection into an In0.2Ga0.8As quantum well active region, polarization control is achieved in a vertical-cavity surface-emitting laser with a maximum degree of circular polarization of 4.6% measured at 80 K. Spin transport across a distance of similar to 0.25/mu m for temperatures ranging from 80 to 105 K is demonstrated. (c) 2006 American Vacuum Society.