Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.20, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (92 articles)

757 - 761	Theory of nanotip formation Bilbro GL
762 - 765	Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxy Kohmoto S, Nakamura H, Nishikawa S, Asakawa K
766 - 775	Morphological evolution and surface and interface structure of aluminum on polyimide Lin XF, Grove DA, Wei LC, Strossman GS, Lefever-Button G, Kingsley JR
776 - 782	Effect of polishing pretreatment on the fabrication of ordered nanopore arrays on aluminum foils by anodization Wu MT, Leu IC, Hon MH
783 - 786	Scanning capacitance microscopy measurements using diamond-coated probes Yabuhara H, Ciappa M, Fichtner W
787 - 790	Field electron emission device using silicon nanoprotrusions Sawada K, Tabe M, Ishikawa Y, Ishida M
791 - 796	Importance of fluorine surface diffusion for plasma etching of silicon Verdonck P, Goodyear A, Mansano RD, Barroy PRJ, Braithwaite NSJ
797 - 801	Advanced transfer system for spin coating film transfer and hot-pressing in planarization technology Sato N, Machida K, Kudou K, Yano M, Kyuragi H
802 - 811	Carbon nanotube films grown by laser-assisted chemical vapor deposition Rohmund F, Morjan RE, Ledoux G, Huisken F, Alexandrescu R
812 - 817	Quantum transport through one-dimensional aluminum wires Batra IP, Sen P, Ciraci S
818 - 821	Spatially selective single-grain silicon films induced by hydrogen plasma seeding Bo XZ, Yao N, Wagner S, Sturm JC
822 - 827	Atomic force microscopy using single-wall C nanotube probes Snow ES, Campbell PM, Novak JP
828 - 833	Characterization of methyl-doped silicon oxide film deposited using Flowfill(TM) chemical vapor deposition technology Lu HQ, Cui H, Bhat I, Murarka S, Lanford W, Hsia WJ, Li WD
834 - 842	Comparative study on alloy cluster formation in Co-Al and Co-Pt systems Konno TJ, Yamamuro S, Sumiyama K
843 - 848	Selective etching of AI/AIN structures for metallization of surface acoustic wave devices Engelmark F, Iriarte GF, Katardjiev IV
849 - 854	Electron-beam double resist process to enhance bright field pattern resolution Chan VWC, Chan PCH
855 - 861	Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)(1-x)(TiO2)(x) thin films Westlinder J, Zhang Y, Engelmark F, Possnert G, Blom HO, Olsson J, Berg S
862 - 870	Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements Legrand B, Deresmes D, Stievenard D
871 - 875	Thin-film resistor fabrication for InP technology applications Kopf RF, Melendes R, Jacobson DC, Tate A, Melendes MA, Reyes RR, Hamm RA, Yang Y, Frackoviak J, Weimann NG, Maynard HL, Liu CT
876 - 879	Protection of In0.25Ga0.75As/GaAs structures during lateral oxidation using an amorphous InGaP layer Pickrell GW, Chang KL, Epple JH, Cheng KY, Hsieh KC
880 - 884	Thermal stability of SiO2/CoSi2 /polysilicon multilayer structures improved by cavity formation Alberti A, La Via F, Ravesi S
885 - 890	Inverse electronic scattering from shifted projections within the Fresnel-Kirchhoff formalism Mayer A
891 - 901	Development of a data-driven dynamic model for a plasma etching reactor Zhang HY, Nikolaou M, Peng Y
902 - 908	Deep etch of GaP using high-density plasma for light-emitting diode applications Wuu DS, Chung CR, Liu YH, Horng RH, Huang SH
909 - 913	Highly cross-linked polysilane as antireflective coating for deep ultraviolet lithography to improve durability during SiO2 etching Sato Y, Shiobara E, Onishi Y, Yoshikawa S, Nakano Y, Hayase S, Hamada Y
914 - 917	Ion-graphy implanter with stencil mask Nishihashi T, Kashimoto K, Fujiyama J, Sakurada Y, Shibata T, Suguro K, Sugihara K, Okumura K, Gotou T, Saji S, Tsunoda M
918 - 923	Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 mu m complementary metal-oxide-semiconductor fabrication Kim SD, Hwang IS, Park HM, Rhee JK, Nam CW
924 - 931	Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist Houle FA, Hinsberg WD, Sanchez MI, Hoffnagle JA
932 - 935	Fabrication of micrometer and nanometer scale structures in silica sol-gel films using electron beam writing methods Visovsky NJ, Ukrainczyk L, Dawes SB
936 - 939	Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films Yamada-Takamura Y, Yoshida T
940 - 945	Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability Lin KC, Shieh JM, Chang SC, Dai BT, Chen CF, Feng MS
946 - 955	Molecular dynamics simulation of sputter trench-filling morphology in damascene process Ju SP, Weng CI, Chang JG, Hwang CC
956 - 959	Patterning pentacene organic thin film transistors Kymissis I, Dimitrakopoulos CD, Purushothaman S
960 - 963	Controlled tuning of periodic morphologies on vicinal Si(111) surfaces Szkutnik PD, Sander D, Dulot F, d'Avitaya FA, Hanbucken M
964 - 968	Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature Ng TK, Yoon SF, Wang SZ, Loke WK, Fan WJ
969 - 973	Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD
974 - 983	Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures Van den Berg JA, Armour DG, Zhang S, Whelan S, Ohno H, Wang TS, Cullis AG, Collart EHJ, Goldberg RD, Bailey P, Noakes TCQ
984 - 991	Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growth Ruthe KC, DeLuca PM, Barnett SA
992 - 994	Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon Lu XM, Shao L, Wang XM, Liu JR, Chu WK, Bennett J, Larson L, Ling PC
995 - 999	Nanophase films deposited from a high-rate, nanoparticle beam Urban FK, Hosseini-Tehrani A, Griffiths P, Khabari A, Kim YW, Petrov I
1000 - 1007	Effects of the polymer residues on via contact resistance after reactive ion etching Ko HS, Nah JW, Paik KW, Park Y
1008 - 1012	Freestanding microheaters in Si with high aspect ratio microstructures Tian WC, Pang SW
1013 - 1018	1.3 mu m InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region Lei PH, Wu MY, Wu MC, Lee CY, Ho WJ, Lin CC
1019 - 1025	Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits Sugitani S, Onodera K, Aoyama S, Hirano M, Tokumitsu M
1026 - 1030	Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma Ohtake H, Samukawa S
1031 - 1043	Modeling and simulation of atomic layer deposition at the feature scale Gobbert MK, Prasad V, Cale TS
1044 - 1047	Low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer-scale objects: Application to carbon nanotubes Dorozhkin P, Nejoh H, Fujita D
1048 - 1054	Reduced pressure chemical vapor deposition of Si1-x-yGexCy/Si and S1-yCy/Si heterostructures Loup V, Hartmann JM, Rolland G, Holliger P, Laugier F, Vannuffel C, Semeria MN
1055 - 1063	Etching of polysilicon in inductively coupled Cl-2 and HBr discharges. I. Experimental characterization of polysilicon profiles Mahorowala AP, Sawin HH, Jones R, Labun AH
1064 - 1076	Etching of polysilicon in inductively coupled Cl-2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics Mahorowala AP, Sawin HH
1077 - 1083	Etching of polysilicon in inductively coupled Cl-2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching Mahorowala AP, Sawin HH
1084 - 1095	Etching of polysilicon in inductively coupled Cl-2 and HBr discharges. IV. Calculation of feature charging in profile evolution Mahorowala AP, Sawin HH
1096 - 1101	Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors Yu KH, Lin KW, Lin KP, Yen CH, Wang CK, Liu WC
1102 - 1106	Growth and evolution of ZnCdSe quantum dots Shan CX, Fan XW, Zhang JY, Zhang ZZ, Li BS, Lu YM, Liu YC, Shen DZ, Kong XG, Wang XH
1107 - 1110	Selective wet etching of AIGaAs in HF/CrO3 solutions: Application to vertical taper structures in integrated optoelectronic devices Huang H, Huang YQ, Ren XM
1111 - 1117	Effects of the underlayer substrates on copper chemical vapor deposition Lin CL, Chen PS, Chen MC
1118 - 1125	Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy Huang SM, Hong MH, Luk'yanchuk BS, Lu YF, Song WD, Chong TC
1126 - 1131	Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications Johnson RS, Hong JG, Hinkle C, Lucovsky G
1132 - 1134	Feasibility of thin film microfabricated hydrogen ion sources Reuss RH, Chalamala BR
1135 - 1138	Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K Banerjee S, Huang SY, Yamanaka T, Oda S
1139 - 1142	Investigation of polymethylmethacrylate resist residues using photoelectron microscopy Maximov I, Zakharov AA, Holmqvist T, Montelius L, Lindau I
1143 - 1145	Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal-oxide-semiconductor gate dielectric applications Jeon S, Yang H, Chang HS, Park DG, Hwang H
1153 - 1153	Papers from the 20th North American Conference on Molecular Beam Epitaxy - Preface Newman P
1154 - 1157	Optical characterization of strained InGaAsN/GaAs multiple quantum wells Heroux JB, Yang X, Wang WI
1158 - 1162	Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency Kovsh AR, Wang JS, Wei L, Shiao RS, Chi JY, Volovik BV, Tsatsul'nikov AF, Ustinov VM
1163 - 1166	Growth of GaInNAs quaternaries using a digital alloy technique Hong YG, Egorov AY, Tu CW
1167 - 1169	Growth and characterization of Ga0.8In0.2(N)As quantum wells with GaNxAs1-x(x <= 0.05) barriers by plasma-assisted molecular beam epitaxy Govindaraju S, Holmes AL
1170 - 1173	Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxy Calawa SD, Burke BE, Nitishin PM, Loomis AH, Gregory JA, Lind TA
1174 - 1177	Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions Sigmund J, Saglam M, Hartnagel HL, Zverev VN, Raichev OE, Debray P, Miehe G, Fuess H
1178 - 1181	Atomistics of III-V semiconductor surfaces: Role of group V pressure Grosse F, Barvosa-Carter W, Zinck JJ, Gyure MF
1182 - 1184	Electrical spin injection into In0.4Ga0.6As/GaAs quantum dots using (Ga,Mn)As Ghosh S, Bhattacharya P
1185 - 1187	Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier Stiff-Roberts AD, Krishna S, Bhattacharya P, Kennerly S
1188 - 1191	Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers Kim ET, Chen ZH, Ho M, Madhukar A
1192 - 1195	Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy Sugaya T, Bird JP, Ferry DK, Jang KY, Ogura M, Sugiyama Y
1196 - 1199	High quality GaAs grown on Si-on-insulator compliant substrates Pei CW, Heroux JB, Sweet J, Wang WI, Chen J, Chang MF
1200 - 1204	Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers Baklenov O, Lubyshev D, Wu Y, Fang XM, Fastenau JM, Leung L, Towner FJ, Cornfeld AB, Liu WK
1205 - 1208	Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC
1209 - 1212	High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications Hoke WE, Leoni RE, Whelan CS, Marsh PF, Jang JH, Adesida I, Joshi AM, Wang X
1213 - 1216	InAs-based bipolar transistors grown by molecular beam epitaxy Averett KL, Maimon S, Wu X, Koch MW, Wicks GW
1217 - 1220	Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy Ng HM, Cho AY
1221 - 1228	Role of low-temperature (200 degrees C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G
1229 - 1233	High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I
1234 - 1237	Surface and interface characterization of GaN/AlGaN high electron mobility transistor structures by x-ray and atomic force microscopy Torabi A, Ericson P, Yarranton EJ, Hoke WE
1238 - 1242	Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system Mendez-Garcia VH, Zamora L, Lastras-Martinez A, Saucedo N, Pena R, Guillen A, Rivera Z, Melendez M, Lopez M, Hernandez F, Huerta J
1243 - 1246	Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n-i-n photodetector structures Chen ZH, Kim ET, Madhukar A
1247 - 1250	Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy Lynch C, Chason E, Beresford R, Chen EB, Paine DC
1251 - 1258	Kinetics of the heteroepitaxial growth of Ge on Si(001) Yam V, Le Thanh V, Boucaud P, Debarre D, Bouchier D
1259 - 1265	Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots Le Thanh V, Yam V, Nguyen LH, Zheng Y, Boucaud P, Debarre D, Bouchier D
1266 - 1269	Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe Chun SH, Ku KC, Potashnik SJ, Schiffer P, Samarth N
1270 - 1273	High characteristic temperature (T-0=243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy Ohno Y, Kanamori H, Shimomura S, Hiyamizu S
1274 - 1277	Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI
1278 - 1281	Molecular-beam epitaxy growth and properties of BexZn1-xTe alloys for optoelectronic devices Maksimov O, Munoz M, Tamargo MC, Lau J, Neumark GF