In this study we evaluated both NiCr and TaN thin-film resistor material for use with our InP technology. Thermal stability, sensitivity to oxidation, temperature coefficients, and patterning techniques were compared for the two materials. The film stoichiometry was determined using Rutherford backscattering and Auger electron spectroscopy analysis. Electron-beam evaporation of NiCr (80:20) resulted in films that were rich in Cr (30%), due to a higher vapor pressure of Cr. Thus, it was preferentially evaporated from the source. The TaN, on the other hand, was stoichiometric to within a few atomic %. This was due to better composition control with sputter deposition as opposed to electron (e)-beam evaporation from an alloy source. The NiCr showed a 5% increase in R-s when exposed to O-2 plasma, and was stable for anneal temperatures of up to 300degreesC. Alternatively, the TaN was stable for O-2 plasma exposure, but had an increase in R-s of 5% or 10% when annealed at 300 degreesC in N-2 or air ambients, respectively. From a fabrication point of view, the NiCr was more stable during bake cycles. However, it must be encapsulated to protect it from O-2 plasma exposure. It can, therefore, be used earlier on in the process. On the other hand, TaN was more stable during plasma exposure, however, it must not be baked at high temperatures. It can thus be used at the back end of the process. The NiCr thickness required to obtain an R-s of 50 Ohm/rectangle was around 250 Angstrom, as opposed to 800 Angstrom for the TaN. This may have an effect on electromigration issues for high current density applications. In addition, the TaN would be better in applications where resistors with higher R-s are required, such as 200 Ohm/rectangle.