Post-exposure bake-induced blurring of the latent image in a chemically amplified photoresist may limit the extendibility of this resist technology to printing of nanoscale features. It had been proposed that blurring is caused by thermally assisted diffusion of photogenerated acid, however our experimental and kinetic modeling investigations of coupled reaction-diffusion in a resist system consisting of a photoacid generator in p-t-butyloxycarbonyloxystyrene (PTBOCST) have shown that the very high efficiency of acidolysis chemistry at the edge of an exposed region is actually responsible for blurring. Studies of the role of added base and the impact of photoacid generator size on blur support this view. These previous studies were performed with a one-dimensional (ID) geometry. In order to test the relevance of the ID blurring model to pattern formation, we have carried out new investigations of blurring in dense line-space patterns using the same PTBOCST resist systems as in our earlier work. Resist films were imprinted with 866 and 192 nm pitch gratings The extent of deprotection over a range generated by interferometric Lithography using 257 nm light of doses and bake times at 85 degreesC was measured by infrared spectroscopy and compared to results of simulations of the bake process using the experimental aerial image and kinetics determined in the previous work. Experiment and predictions are in good agreement in all cases, indicating that the one-dimensional kinetics are extendable to the two-dimensional case. This simulations permit visualization of the relationship between the acid latent image and the developable image that forms in the polymer, enabling a deeper appreciation of the influences of the resist components and of resist processing conditions on latent image transformations during post-exposure bake.