The early efforts to form nanoparticles beams were characterized by unsuccessful nanoparticle formation, synthesis for only a few "high vapor pressure" solids, or prohibitively low deposition rates. A new type of deposition system described here overcomes these impediments and is demonstrated to produce at high rates nanostructured films of diverse materials. It employs ion sputtering of target materials and gas phase condensation into an inert gas atmosphere at pressures less than or equal to 1 Torr. The condensed nanoparticles are then swept out of a 3 mm diameter converging-diverging exit nozzle, forming a low velocity beam. The beam is directed on a substrate on which a film is deposited. Nanostructured films were successfully grown using Al, Cr, Fe, Ni, Cu1-xCox, Cu, Zr, Mo, Ag, Ta, W, Pt, and Au targets at rates in the interval of 0.15-0.91 nm s(-1) with metal-atom deposition fluxes in the interval 1.45-11.9 x 10(14) cm(-2) s(-1). Rutherford backscattering spectrometry revealed that metal-atom densities of the films ranged from 11% to 24% from the corresponding bulk metals and that films contained a significant fraction of oxygen and carbon, indicating high reactivity with atmosphere gases. Transmission electron microscopy showed successful formation of nanostructured layers from all materials studied with average sizes (standard deviations) ranging from 0.7 (0.4) to 15.6 (8.2) nm.