Strain-compensated Ga0.92In0.08As/GaN(0.03)AS(0.97) and strained InAs/GaN0.023As0.977 short-period superlattices (SPSLs) were grown as a digital alloy of GaInNAs by gas-source molecular beam epitaxy. Material quality of GaInNAs was improved through the spatial separation of In and N by SPSL growth mode. The photoluminescence (PL) intensity of the strain-compensated Ga0.92In0.08As/GaN0.03As0.97 digital alloys is 3 times higher than that of random alloys at room temperature, and the improvement is even greater at low temperature, by a factor of about 12. Room-temperature PL intensity of the GaInNAs quantum well grown by the strained InAs/GaN0.023As short-period superlattices (SPSL) growth method is higher by a factor of 5 as compared to the continuous growth mode. The strained InAs/GaN0.023As SPSL growth method allows independent adjustment of the In-to-Ga ratio without group III competition since the In composition can be easily adjusted by controlling the InAs growth time.