Journal of Crystal Growth

Journal of Crystal Growth, Vol.298 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (204 articles)

1 - 1	Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII) - 22-26 May 2006 - Phoenix Seagaia Resort, Miyazaki, Japan - Editorial introduction Onabe K, Usui A, Kobayashi N
2 - 7	Fundamental chemistry and modeling of group-III nitride MOVPE Creighton JR, Wang GT, Coltrin ME
8 - 11	In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy Pristovsek M, Rahmer B, Breusig M, Kremzow R, Richter W
12 - 17	Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement Tabuchi M, Takeda Y
18 - 22	MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy Krahmer C, Philippens M, Schubert M, Streubel K
23 - 27	AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices Zorn M, Trepk T, Schenk T, Zettler JT, Weyers M
28 - 31	Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy Decobert J, Dupuis N, Lagree PY, Lagay N, Ramdane A, Ougazzaden A, Poingt F, Cuisin C, Kazmierski C
32 - 36	Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism Song HZ, Im IT, Sugiyama M, Nakano Y, Shimogaki Y
37 - 40	Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal-organic vapor phase epitaxy Shioda T, Sugiyama M, Shimogaki Y, Nakano Y
41 - 45	Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPE Ono K, Takemi M
46 - 49	Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy Kaspari C, Pristovsek M, Richter W
50 - 53	In situ monitoring of the growth procedure of InAs layer by spectral reflectance Ahn E, Lee YS, Kim J, Kim YD, Yoon E
54 - 58	Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces Bork T, McMahon WE, Olson JM, Hannappel T
59 - 63	Reactor-scale uniformity of selective-area performance in InGaAsP system Onitsuka R, Shioda T, Song HZ, Sugiyama M, Shimogaki Y, Nakano Y
64 - 68	Compound semiconductors grown on porous alumina substrate as a novel hydrogen permeation membrane Sato M
69 - 72	Effect of Li doping on photoluminescence from Er, O-codoped GaAs Uki D, Ohnishi H, Yamaguchi T, Takemori Y, Koizumi A, Fuchi S, Ujihara T, Takeda Y
73 - 75	Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy Endo Y, Tanioka K, Hijikata Y, Yaguchi H, Yoshida S, Yoshita M, Akiyama H, Ono W, Nakajima F, Katayama R, Onabe K
76 - 80	Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE Novak J, Hasenohrl S, Vavra I, Sedlackova K, Kucera M, Radnoczi G
81 - 84	Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE Rodriguez P, Auvray L, Dumont H, Dazord J, Monteil Y
85 - 89	High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties Ichikawa O, Fukuhara N, Hata M, Nakano T, Sugiyama M, Shimogaki Y, Nakano Y
90 - 93	Atomic layer epitaxy of MnAs on GaAs(001) Ozeki M, Haraguchi T, Fujita A
94 - 97	Selective area etching of InP with CBr4 in MOVPE Ebert C, Levkoff J, Roberts J, Seiler J, Wanamaker C, Pinnington T
98 - 102	Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system Oberhoff S, Kunert B, Torunski T, Volz K, Stolz W
103 - 106	MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy) Nakajima F, Ono W, Kuboya S, Katayama R, Onabe K
107 - 110	Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE Panpech P, Vijarnwannaluk S, Sanorpim S, Ono W, Nakajima F, Katayama R, Onabe K
111 - 115	Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy Kongjaeng P, Sanorpim S, Yamamoto T, Ono W, Nakajima F, Katayama R, Onabe K
116 - 120	Optical properties of GaTnNAs quantum wells on misoriented substrates grown by MOVPE Ishizuka T, Doi H, Katsuyama T, Hashimoto J, Nakayama M
121 - 125	MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate Kunert B, Volz K, Koch J, Stolz W
126 - 130	Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor hetero structures Volz K, Koch J, Kunert B, Nemeth I, Stolz W
131 - 134	Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys Tanioka K, Endo Y, Hijikata Y, Yaguchi H, Yoshida S, Yoshita M, Akiyama H, Onabe K
135 - 139	Substrate-surface orientation dependence of N content in MOVPE growth of GaAsN films on GaAs Ono W, Nakajima F, Sanorpim S, Katayama R, Onabe K
140 - 144	Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation Klangtakai P, Sanorpim S, Yoodee K, Ono W, Nakajima F, Katayama R, Onabe K
145 - 149	Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE Chen WC, Su YK, Chuang RW, Tsai MC, Cheng KY, Wang YS
150 - 153	Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy Sanorpim S, Nakajima F, Nakadan N, Kimura T, Katayama R, Onabe K
154 - 158	Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy Khandekar AA, Yeh JY, Mawst LJ, Song XY, Babcock SE, Kuech TF
159 - 162	Segregation and desorption of antimony in InP (001) in MOVPE Weeke S, Leyer M, Pristovsek M, Brunner F, Weyers M, Richter W
163 - 167	Electrical properties of undoped and doped MOVPE-grown InAsSb Krug T, Botha L, Shamba P, Baisitse TR, Venter A, Engelbrecht JAA, Botha JR
168 - 171	Bubbler for constant vapor delivery of a solid chemical Andre CL, El-Zein N, Tran N
172 - 175	Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE Shenai DV, DiCarlo RL, Power MB, Amamchyan A, Goyette RJ, Woelk E
176 - 180	Stable vapor transportation of solid sources in MOVPE of III-V compound semiconductors Shenai-Khatkhate DV, DiCarlo RL, Marsman CJ, Polcari RF, Ware RA, Woelk E
181 - 185	On the pyrophoricity, safety, and handling of metalorganic chemicals Andre CL, Bisinger E, El-Zein N, Luttmer A, Van Mierlo MJA, Wissink HG
186 - 189	Systematic theoretical investigations InxGa1-xN thin films of compositional inhomogeneity in on GaN(0001) Ito T, Inahama S, Akiyama T, Nakamura K
190 - 192	Analysis of compositional instability of InGaN by Monte Carlo simulation Kangawa Y, Kakimoto K, Ito T, Koukitu A
193 - 197	Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF
198 - 201	GaN growth on 150-mm-diameter (111) Si substrates Ubukata A, Ikenaga K, Akutsu N, Yamaguchi A, Matsumoto K, Yamazaki T, Egawa T
202 - 206	Growth optimization during III-nitride multiwafer MOVPE using realtime curvature, reflectance and true temperature measurements Brunner F, Hoffmann V, Knauer A, Steimetz E, Schenk T, Zettler JT, Weyers M
207 - 210	Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE Hikosaka T, Koide N, Honda Y, Yamaguchi M, Sawaki N
211 - 214	Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD Yu TJ, Pan YB, Yang ZJ, Xu K, Zhang GY
215 - 218	High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Kato N, Sato S, Sumii T, Fujimoto N, Okada N, Imura M, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Maruyama H, Noro T, Takagi T, Bandoh A
219 - 222	Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates Horng RH, Wang WK, Huang SC, Huang SY, Lin SH, Lin CF, Wuu DS
223 - 227	Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE Komiyama J, Abe Y, Suzuki S, Nakanishi H
228 - 231	Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition Liu CX, Xie ZL, Han P, Liu B, Li LA, Zou J, Zhou SM, Bai LH, Chen ZH, Zhang R, Zheng YD
232 - 234	Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE Hoshino K, Yanagita N, Araki M, Tadatomo K
235 - 238	Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD Ran JX, Wang XL, Hu GX, Li JP, Wang BZ, Xiao HL, Wang JX, Zeng YP, Li JM, Wang ZG
239 - 242	Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source Fong WK, Leung KK, Surya C
243 - 245	In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm Simbrunner C, Schmidegg K, Bonanni A, Kharchenko A, Bethke J, Woitok J, Lischka K, Sitter H
246 - 250	Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD Hung H, Chen CH, Chang SJ, Kuan H, Lin RM, Liu CH
251 - 253	An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation Kawamura T, Kangawa Y, Kakimoto K
254 - 256	Room temperature ferromagnetism of GaN : Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping Chen ZT, Su YY, Yang ZJ, Zhang B, Xu K, Yang XL, Pan YB, Zhang GY
257 - 260	Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Imura M, Nakano K, Narita G, Fujimoto N, Okada N, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Noro T, Takagi T, Bandoh A
261 - 264	Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Kawashima T, Nagai T, Iida D, Miura A, Okadome Y, Tsuchiya Y, Iwaya M, Kamiyama S, Amano H, Akasaki I
265 - 267	Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices Iida K, Kawashima T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A
268 - 271	Growth of low dislocation density GaN using transition metal nitride masking layers Moram MA, Kappers MJ, Barber ZH, Humphreys CJ
272 - 275	Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert EF, Liu L, Tsvetkov D, Hanser D, Wetzel C
276 - 280	Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique Lang T, Odnoblyudov MA, Bougrov VE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H
281 - 283	Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD Liu Z, Wang XL, Wang JX, Hu GX, Guo LC, Li JP, Li JM, Zeng YP
284 - 287	TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template Kuwano N, Hijikuro M, Hata S, Takeuchi M, Aoyagi Y
288 - 292	Microstructure in nonpolar m-plane GaN and AlGaN films Nagai T, Kawashima T, Imura M, Iwaya M, Kamiyama S, Amano H, Akasaki I
293 - 296	Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy Kusakabe K, Ando S, Ohkawa K
297 - 299	Inversion domains in AlGaN films grown on patterned sapphire substrate Kawamichi S, Nishino K, Sumiyoshi K, Tsukihara M, Yan FW, Sakai S
300 - 304	Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S
305 - 309	Investigation of surface defect structure originating in dislocations in AlGaN/GaN epitaxial layer grown on a Si substrate Sasaki H, Kato S, Matsuda T, Sato Y, Iwami M, Yoshida S
310 - 315	Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate Taniyasu Y, Kasu M, Makimoto T
316 - 319	BGaN materials on GaN/sapphire substrate by MOVPE using N-2 carrier gas Ougazzaden A, Gautier S, Sartel C, Maloufi N, Martin J, Jomard F
320 - 324	BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire Akasaka T, Kobayashi Y, Makimoto T
325 - 327	Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy Kobayashi Y, Nakamura T, Akasaka T, Makimoto T, Matsumoto N
328 - 331	Growth of AIN by vectored flow epitaxy Clayton AJ, Khandekar AA, Kuech TF, Mason NJ, Robinson MF, Watkins S, Guo Y
332 - 335	MOVPE-like HVPE of AlN using solid aluminum trichloride source Eriguchi KI, Murakami H, Panyukova U, Kumagai Y, Ohira S, Koukiu A
336 - 340	Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD Takeuchi M, Shimizu H, Kajitani R, Kawasaki K, Kumagai Y, Koukitu A, Aoyagi Y
341 - 344	Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers Pan YB, Yu TJ, Yang ZJ, Wang H, Qin ZX, Hu XD, Wang K, Yao S, Zhang GY
345 - 348	Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer Niikura E, Murakawa K, Hasegawa F, Kawanishi H
349 - 353	Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Okada N, Kato N, Sato S, Sumii T, Nagai T, Fujimoto N, Imura M, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Maruyama H, Takagi T, Noro T, Bandoh A
354 - 356	Effect of AlN interlayer on incorporation efficiency of Al composition in AlGaN grown by MOVPE Qin ZX, Luo HJ, Chen ZZ, Yu TJ, Yang ZJ, Xu K, Zhang GY
357 - 360	The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD Liu B, Zhang R, Xie ZL, Ji XL, Jiang RL, Xiu XQ, Li L, Liu CX, Yu HQ, Han P, Gu SL, Shi Y, Zheng YD
361 - 366	Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization Rossow U, Fuhrmann D, Litte T, Retzaff T, Hoffmann L, Bremers H, Hangleiter A
367 - 371	Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor deposition Song DW, Kim HJ, Jeon YS, Yoon E
372 - 374	Influence of growth conditions on Al incorporation to AlxGa1-xN (x > 0.4) grown by MOVPE Li DB, Aoki M, Katsuno T, Miyake H, Hiramatsu K, Shibata T
375 - 378	The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl-2/SiCl4/Ar plasma Li R, Dai T, Zhu L, Pan HP, Xu K, Zhang B, Yang ZJ, Zhang GY, Gan ZZ, Hu XD
379 - 382	Characterization of AlN : Mn thin film phosphors prepared by metalorganic chemical vapor deposition Sato A, Azumada K, Atsumori T, Hara K
383 - 386	Structural and spectroscopic properties of AlN layers grown by MOVPE Thapa SB, Kirchner C, Scholz F, Prinz GM, Thonke K, Sauer R, Chuvilin A, Biskupek J, Kaiser U, Hofstetter D
387 - 389	Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor-phase epitaxy Murakami H, Torii JI, Kumagai Y, Koukity A
390 - 393	A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT approximate to 200 degrees C) Yamamoto A, Miyanishi M, Kunishige T, Kobayashi T, Hashimoto A, Nambo Y
394 - 398	Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy Shen WZ, Jia ZW, Chen J, Ye HB, Ogawa H, Guo QX
399 - 402	Electrical and optical properties of MOVPE InN doped with mg using CP2Mg Yamamoto A, Nagai Y, Niwa H, Miwa H, Hashimoto A
403 - 408	Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor Kadir A, Ganguli T, Gokhale MR, Shah AP, Chandvankar SS, Arora BM, Bhattacharya A
409 - 412	The high mobility InN film grown by MOCVD with GaN buffer layer Xie ZL, Zhang R, Liu B, Li L, Liu CX, Xiu XQ, Zhao H, Han P, Gu SL, Shi Y, Zheng YD
413 - 417	Influence of the reactor inlet configuration on the AlGaN growth efficiency Yakovlev EV, Talalaev RA, Kaluza N, Hardtdegen H, Bay HL
418 - 424	Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors Dauelsberg M, Martin C, Protzmann H, Boyd AR, Thrush EJ, Kappeler J, Heuken M, Talalaev RA, Yakovlev EV, Kondratyev AV
425 - 427	An inverse-flow showerhead MOVPE reactor design Zuo R, Xu Q, Zhang H
428 - 432	GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 Gautier S, Sartel C, Ould-Saad S, Martin J, Sirenko A, Ougazzaden A
433 - 436	Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases Fukuda Y, Orita T, Akutsu N, Ikenaga K, Koseki S, Matsumoto K, Hasaka S
437 - 440	Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus Tanaka T, Nishio M, Hayashida K, Fujimoto K, Guo QX, Ogawa H
441 - 444	Low-pressure metalorganic vapor phase epitaxy growth of ZnTe Kume Y, Guo QX, Tanaka T, Nishio M, Ogawa H, Shen WZ
445 - 448	Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy Kume Y, Guo QX, Fukuhara Y, Tanaka T, Nishio M, Ogawa H
449 - 452	Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy Saito K, Yamashita T, Kouno D, Tanaka T, Nishio M, Guo QX, Ogawa H
453 - 456	MOVPE growth, and magnetic and crystallographic studies of Zn1-xVxSe Tahashi M, Goto H, Ido T
457 - 460	Homoepitaxial growth of non-polar ZnO (11(2)over-bar-0) films on off-angle ZnO substrates by MOCVD Abe T, Kashiwaba Y, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y
461 - 463	Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate Chao YC, Lin CW, Ke DJ, Wu YH, Chen HG, Chang L, Ho YT, Liang MH
464 - 467	Crystal growth of ZnO on Si(111) by metalorganic vapor phase epitaxy Moriyama T, Fujita S
468 - 471	MgxZn1-xO films grown by remote-plasma-enhanced MOCVD with EtCp2Mg Yamamoto K, Enomoto K, Nakamura A, Aoki T, Temmyo J
472 - 476	Atomic layer deposition of epitaxial ZnO on GaN and YSZ Lin CW, Ke DJ, Chao YC, Chang L, Liang MH, Ho YT
477 - 480	Comparison of non-polar ZnO (1 1 (2)over-bar-0) films deposited on single crystal ZnO (1 1 (2)over-bar-0) and sapphire (0 1 (1)over-bar-2) substrates Kashiwaba Y, Abe T, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y
481 - 485	Properties of ZnO epitaxial layers and polycrystalline films prepared by metalorganic molecular beam epitaxial apparatus using diethylzinc and water as precursors Terasako T, Ishiko Y, Saeki K, Yudate S, Shirakata S
486 - 490	P-type nitrogen-doped ZnO thin films on sapphire (1 1 (2)over-bar-0) substrates by remote-plasma-enhanced metalorganic chemical vapor deposition Gangil S, Nakamura A, Ichikawa Y, Yamamoto K, Ishihara J, Aoki T, Temmyo J
491 - 494	Growth of nitrogen-doped ZnO films by MOVPE using diisopropylzinc and tertiary-butanol Kumar OS, Watanabe E, Nakai R, Nishimoto N, Fujita Y
495 - 499	Single-phase Pb(Zn1/3Nb2/3)O-3 thin films grown by metalorganic chemical vapor deposition: Effects of growth sequence and substrates Nishida K, Yokoyama S, Okamoto S, Saito K, Uchida H, Koda S, Katoda T, Funakubo H
500 - 503	Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x > 0.5) multiple quantum wells Li DB, Aoki M, Katsuno T, Miyake H, Hiramatsu K, Shibata T
504 - 507	Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ, Humphreys CJ
508 - 510	MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications Cheng AT, Su YK, Lai WC
511 - 514	InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization Zhou HL, Chua SJ, Zang KY, Wang LS, Tripathy S, Yakovlev N, Thomas O
515 - 517	Flat-band potentials of GaN and InGaN/GaN QWs by bias-dependent photoluminescence in electrolyte solution Kobayashi N, Morita R, Narumi T, Yamamoto J, Ban Y, Wakao K
518 - 521	Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase elpitaxy Ohno A, Tomita N, Yamada T, Okagawa H, Takemi M
522 - 526	The influence of internal electric fields on the transition energy of InGaN/gaN quantum well Guo LC, Wang XL, Xiao HL, Wang BZ
527 - 530	Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain Sharma TK, Singh SD, Porwal S, Nath AK
531 - 535	Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE Kaewket D, Tungasmita S, Sanorpim S, Nakajima F, Nakadan N, Kimura T, Katayama R, Onabe K
536 - 539	Comparison of H-2 and N-2 as carrier gas in MOVPE growth of InGaAsN quantum wells Reentila O, Mattila M, Knuuttila L, Hakkarainen T, Soparlen M, Lipsanen H
540 - 543	Optical characterization of improvement of carrier localization in InGaAsN/GaAs single quantum wells by addition of Sb flux to interfaces Iguchi Y, Ishizuka T, Yamada T, Takagishi S, Nomura K, Nakayama M
544 - 547	MOVPE and characterization of InAsN/GaAs multiple quantum wells Kuboya S, Thieu QT, Ono W, Nakajima F, Katayama R, Onabe K
548 - 552	Effect of antimony on the density of InAs/Sb : GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition Guimard D, Nishioka M, Tsukamoto S, Arakawa Y
553 - 557	Stacking, polarization control, and lasing (1.55 mu m region) InAs/InGaAsP/InP (100) quantum dots Anantathanasarn S, Notzel R, van Veldhoven PJ, van Otten FWM, Eijkemans TJ, Barbarin Y, de Vries T, Smalbrugge E, Geluk EJ, Bente E, Oei YS, Smit MK, Wolter JH
558 - 561	Controlling shape of InAs1-xSbx quantum structures on InP for quantum dots with 1.55-mu m emission Kawaguchi K, Ekawa M, Akiyama T, Kuwatsuka H, Sugawara M
562 - 566	Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate Okawa T, Yamauchi Y, Yamamoto J, Yoshida J, Shimomura K
567 - 569	Epitaxy of multimodal InAs/GaAs quantum dot ensembles Potschke K, Feise D, Pohl UW, Bimberg D
570 - 573	Lateral-shape of InAs/GaAs quantum dots in vertically correlated structures Hospodkova A, Krapek V, Mates T, Kuldova K, Pangrac J, Hulicius E, Oswald J, Melichar K, Humlicek J, Simecek T
574 - 577	Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer Suzuki R, Miyamoto T, Koyama F
578 - 581	Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array Yamauchi Y, Okamoto S, Okawa T, Kawakita Y, Yoshida J, Shimomura K
582 - 585	Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs Hospodkova A, Hulicius E, Oswald J, Pangrac J, Mates T, Kuldova K, Melichar K, Simecek T
586 - 590	Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots Bansal B, Gokhale MR, Bhattacharya A, Arora BM
591 - 594	MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 mu m Germann TD, Strittmatter A, Kettler T, Posilovic K, Pohl UW, Bimberg D
595 - 598	Red to green photoluminescence of InP-quantum dots in AlxGa1-xInP Rossbach R, Schulz WM, Reischle M, Beirne GJ, Jetter M, Michler P
599 - 602	Green photoluminescence of single InP-quantum dots grown on Al0.66Ga0.33InP/AlInP distributed Bragg reflectors Rossbach R, Schulz WM, Jetter M, Michler P
603 - 606	Vertical asymmetric double quantum dots Rossbach R, Reischle M, Beirne GJ, Schweizer H, Jetter M, Michler P
607 - 611	Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs Regolin I, Sudfeld D, Luttjohann S, Khorenko V, Prost W, Kastner J, Dumpich G, Meier C, Lorke A, Tegude FJ
612 - 615	Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs/InP (111) B layers by metal-organic vapor phase epitaxy Hara S, Motohisa J, Fukui T
616 - 619	Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE Ikejiri K, Noborisaka J, Hara S, Motohisa J, Fukui T
620 - 624	GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor Paiano P, Prete P, Speiser E, Lovergine N, Richter W, Tapfer L, Mancini AM
625 - 630	MOVPE growth and real structure of vertical-aligned GaAs nanowires Bauer J, Gottschalch V, Paetzelt H, Wagner G, Fuhrmann B, Leipner HS
631 - 634	InAs nanowires grown by MOVPE Dick KA, Deppert K, Samuelson L, Seifert W
635 - 639	The structure of < 1 1 1 > B oriented GaP nanowires Johansson J, Karlsson LS, Svensson CPT, Martensson T, Wacaser BA, Deppert K, Samuelson L
640 - 643	Catalyst-free fabrication of InP and InP(N) nanowires by metalorganic vapor phase epitaxy Mattila M, Hakkarainen T, Lipsanen H
644 - 647	Growth of highly uniform InAs nanowire arrays by selective-area MOVPE Tomioka K, Mohan P, Noborisaka J, Hara S, Motohisa J, Fukui T
648 - 651	A(III)-B-V nano- and microtubes fabricated on (110)-oriented GaAs- and GaP-substrate using the metal-organic vapor-phase epitaxy Paetzelt H, Gottschalch V, Bauer J, Wagner G
652 - 657	MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs Bugge F, Zeimer U, Staske R, Sumpf B, Erbert G, Weyers M
658 - 662	Evaluation of incorporation efficiency of group V source gases in metal organic chemical vapor deposition of GaInNAs for high quality 1.21 mu m quantum-well ridge wave guide lasers Kushibe M, Hashimoto R, Ezaki M, Hatakoshi GI, Nishioka M, Arakawa Y
663 - 666	Low threshold InP/AlGaInP on GaAs QD laser emitting at similar to 740 nm Krysa AB, Liew SL, Lin JC, Roberts JS, Lutti J, Lewis GM, Smowton PM
667 - 671	High-power red laser diodes grown by MOVPE Zorn M, Wenzel H, Zeimer U, Sumpf B, Erbert G, Weyers M
672 - 675	Selective-area MOVPE growth for 10 Gbit/s electroabsorption modulator integrated with a tunable DBR laser Kim SB, Sim JS, Kim KS, Sim ED, Ryu SW, Park HL
676 - 681	Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPE Yoshioka T, Kawakita Y, Kawai A, Okawa T, Shimomura K
682 - 686	Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer Ohba Y, Gotoda T, Kaneko K
687 - 690	GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition Huang GS, Lu TC, Yao HH, Kuo HC, Wang SC, Sun G, Lin CW, Chang L, Soref RA
691 - 694	High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD Xie ZL, Zhang R, Liu B, Ji XL, Li L, Liu CX, Jiang RL, Gong HM, Zhao H, Han P, Shi Y, Zheng YD
695 - 698	Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire Lee SN, Paek HS, Ryu HY, Son JK, Sakong T, Jang T, Choi KK, Sung YJ, Kim YH, Kim HK, Chae SH, Ha KH, Chae JH, Kim KS, Kwak JS, Nam OH, Park Y
699 - 702	Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching Cheong HS, Na MG, Choi YJ, Cuong TV, Hong CH, Suh EK, Kong BH, Cho HK
703 - 705	Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etching Fang H, Kang XN, Hu CY, Dai T, Chen ZZ, Qin ZX, Zhang B, Zhang GY
706 - 709	Semipolar GaN/GaInN LEDs with more than 1 mW optical output power Neubert B, Wunderer T, Bruckner P, Scholz F, Feneberg M, Lipski F, Schirra M, Thonke K
710 - 713	Increased power from deep ultraviolet LEDs via precursor selection Moe C, Onuma T, Vampola K, Fellows N, Masui H, Newman S, Keller S, Chichibu SF, DenBaars SP, Emerson D
714 - 718	The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers Nee TE, Wang JC, Shen HT, Wu YF
719 - 721	Influences of laser lift-off process on the performances of large-area light-emitting diodes Hu CY, Kang XN, Fang H, Dai T, Wang MJ, Qin ZX, Chen ZZ, Yang H, Shen B, Zhang GY
722 - 724	High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application Tran CA, Chu CF, Cheng CC, Liu WH, Chu JY, Cheng HC, Fan FH, Yen JK, Doan T
725 - 730	High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates Zhang BS, Liang H, Wang Y, Feng ZH, Ng KW, Lau KM
731 - 735	The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED Chen ZZ, Liu P, Qi SL, Xu K, Qin ZX, Tong YZ, Yu TJ, Hu XD, Zhang GY
736 - 739	Integrated light-emitting diodes grown by MOVPE for flat panel displays Honda T, Kobayashi T, Egawa S, Sawada M, Sugimoto K, Baba T
740 - 743	The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency Suihkonen S, Svensk O, Lang T, Lipsanen H, Odnoblyudov MA, Bougrov VE
744 - 747	GaNUV photodetector by using transparency antimony-doped tin oxide electrode Tu ML, Su YK, Chang SJ, Chuang RW
748 - 753	Using MOVPE growth to generate tomorrow's solar electricity Kurtz S, Friedman D, Geisz J, McMahon W
754 - 757	Strain-balanced MQW pin solar cells grown using a robot-loading showerhead reactor Roberts JS, Airey R, Hill G, Calder C, Barnham KWJ, Lynch M, Tibbits T, Johnson D, Pakes A, Grantham T
758 - 761	Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells Mols Y, Leys MR, Simons E, Poortmans J, Borghs G
762 - 766	Improvements in the MOVPE growth of multi-junction solar cells for very high concentration Rey-Stolle I, Garcia I, Galiana B, Algora C
767 - 771	Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells Wu PH, Su YK, Chen IL, Chen SF, Chiou CH, Guo SH, Hsu JT, Chen WR
772 - 776	On the development of high-efficiency thin-film GaAs and GaInp(2) cells van Deelen J, Bauhuis GJ, Schermer JJ, Mulder P, Haverkamp EJ, Larsen PK
777 - 781	Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell Seidel U, Schimper HJ, Kollonitsch Z, Moller K, Schwarzburg K, Hannappel T
782 - 786	Photovoltaic properties of multilayer organic thin films Inoue J, Yamagishi K, Yamashita M
787 - 790	Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H
791 - 793	MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate Wang XL, Wang CM, Hu GX, Mao HL, Fang CB, Wang JX, Ran JX, Li HP, Li JM, Wang ZG
794 - 799	Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties Garcia I, Rey-Stolle I, Galiana B, Algora C
800 - 803	Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer Fang CB, Wang XL, Xiao HL, Hu GX, Wang CM, Wang XY, Li JP, Wang JX, Li CJ, Zeng YP, Li JM, Wang ZG
804 - 807	Investigation on the different barrier effect of Ni and Pt in the Ti/Al/Pt/Au and Ti/Al/Ni/Au contacts to n-type GaN Hu CY, Ding ZB, Qin ZX, Chen ZZ, Xu K, Wang YJ, Yang ZJ, Yao SD, Shen B, Zhang GY
808 - 810	Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry Hu CY, Ding ZB, Qin ZX, Chen ZZ, Xu K, Yang ZJ, Shen B, Yao SD, Zhang GY
811 - 814	Effect of growth conditions on electrical properties of Mg-doped p-GaN Svensk O, Suihkonen S, Lang T, Lipsanen H, Sopanen M, Odnoblyudov MA, Bougrov VE
815 - 818	Vertical conductivity of p-AlxGa1-xN/GaN superlattices measured with modified transmission line model Hu CY, Wang YJ, Xu K, Hu XD, Yu LS, Yang ZJ, Shen B, Zhang GY
819 - 821	Low-resistance graded AlxGa1-xN buffer layers for vertical conducting devices on n-SiC substrates Nishikawa A, Kumakura K, Akasaka T, Makimoto T
822 - 825	AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 Cheng K, Leys M, Derluyn J, Degroote S, Xiao DP, Lorenz A, Boeykens S, Germain M, Borghs G
826 - 830	In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B
831 - 834	C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE Kato S, Satoh Y, Sasaki H, Masayuki I, Yoshida S
835 - 839	AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD Wang XL, Hu GX, Ma ZY, Ran JX, Wang CM, Mao HL, Tang H, Li HP, Wang JX, Zeng YP, Jinmin LM, Wang ZG
840 - 842	High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method Leung KK, Chan CP, Fong WK, Pilkuhn M, Schweizer H, Surya C
843 - 847	MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates Fieger M, Eickelkamp M, Koshroo LR, Dikme Y, Noculak A, Kalisch H, Heuken M, Jansen RH, Vescan A
848 - 851	DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD Cheng AT, Su YK, Lai WC, Huang CH
852 - 856	High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Chung T, Keogh DM, Ryou JH, Yoo D, Limb J, Lee W, Shen SC, Asbeck PM, Dupuis RD
857 - 860	High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors Yamada H, Fukuhara N, Hata M
861 - 866	Correlation between the base-emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE Uchida K, Kurokawa A, Yang FY, Jin Z, Nozaki S, Morisaki H
867 - 870	InP buried growth of SiO2 wires toward reduction of collector capacitance in HBT Miyamoto Y, Ishida M, Yamamoto T, Miura T, Furuya K
871 - 874	High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates Hashimoto S, Yoshizumi Y, Tanabe T, Kiyama M
875 - 878	High-breakdown-voltage pn-junction diodes on GaN substrates Yoshizumi Y, Hashimoto S, Tanabe T, Kiyama M