Influences of laser lift-off (LLO) process on the performances of large-area light emitting diodes(LALEDs) have been investigated. The current-voltage (I-P), light output power-current (L-I) and electroluminescence (EL) results are presented for the same LALEDs before and after LLO process, respectively. In this way, it was proved that the LLO process had no influence on the I-V profiles and the wavelength of the LALEDs. However, the detachment of the sapphire substrate increased the light output of the LLO-LALEDs. (c) 2006 Elsevier B.V. All rights reserved.