At InGaP-on-GaAs heterointerface, transition layer is formed during metalorganic vapor phase epitaxy (MOVPE) growth that can affect device properties. Many studies of this transition layer have been done but the characterization methods used are not direct measures of the atomic structure at the heterointerface. In this study, we investigated the abruptness and thickness of the InGaP-on-GaAs transition layers by field-emission Auger electron spectroscopy, by which a depth profile with a resolution of abruptness of 30 angstrom or below can be obtained. The group V switching position relative to that of In goes deeper into the GaAs with increasing PH3 Supply, suggesting an initial, quick replacement of As atoms with P atoms followed by a slow P diffusion into the bulk GaAs. Changes of abruptness of the As or P profiles at the heterointerface with varying PH3 supply on the GaAs surface are not observed. Furthermore, we evaluated the effect of the GaAsP-like transition layers on the turn-on voltage of an InGaP emitter HBT. A linear relationship is shown between the shift of the group V switching position and the HBT turn-on voltage, which is consistent with the assumption that current flow decreases at the transition layer. Calculated difference of conduction band energy between InGaP and the transition layer is 0.15 eV for the sample with ordered InGaP and 0.04 eV for disordered InGaP, is consistent with the difference of the band gap energies between ordered and disordered InGaP. Calculated P compositions are 0.52 and 0.35, respectively. (c) 2006 Elsevier B.V. All rights reserved.