Integrated light-emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). Schottky-type LEDs with a simple structure were realized. The near-band-edge emission of GaN was observed in the electroluminescent spectrum with reversed bias under pulsed voltage conditions. The light-emission and electric characteristics of the LEDs are discussed. (c) 2006 Elsevier B.V. All rights reserved.