ZnTe films were grown on (100) GaAs substrates by metalorganic vapor phase epitaxy using dimethylzine and diethyl telluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on (100) GaAs substrates, and the crystal quality of the ZnTe layers depends strongly on the substrate temperature. A high-crystalline-quality ZnTe heteroepitaxial layer with 103 arcsec of the full-width at half-maximum value of the X-ray rocking curve for (400) reflection, was obtained in this experiment at the substrate temperature of 430 degrees C. (c) 2006 Published by Elsevier B.V.