895 - 899 |
Thermal conductivity of AlN-diamond particulate composite films on silicon Jagannadham K |
900 - 907 |
Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C |
908 - 913 |
Modeling of dc magnetron plasma for sputtering: Transport of sputtered copper atoms Yagisawa T, Makabe T |
914 - 918 |
Investigation of room temperature electrical resistivities of LaNiO3-delta thin films deposited by rf magnetron sputtering and high oxygen-pressure processing Zhang XD, Meng XJ, Sun JL, Wang GS, Lin T, Chu JH |
919 - 928 |
X-ray photoelectron spectroscopy study of the nucleation processes and chemistry of CdS thin films deposited by sublimation on different solar cell substrate materials Espinos JP, Martin-Concepcion AI, Mansilla C, Yubero F, Gonzalez-Elipe AR |
929 - 933 |
Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures Kim Y, Park SA, Baeck JH, Noh MK, Jeong K, Cho MH, Park HM, Lee MK, Jeong EJ, Ko DH, Shin HJ |
934 - 938 |
Hysteresis behavior during reactive magnetron sputtering of A(2)O(3) using a rotating cylindrical magnetron Depla D, Haemers J, Buyle G, De Gryse R |
939 - 945 |
Reactive vacuum vapor deposition of aluminum oxide thin films by an air-to-air metallizer Kobayashi T, Itoh Y, Nakano Y, Hirai E, Hashimoto R, Kamikawa S |
946 - 952 |
Process optimization for the sputter deposition of molybdenum thin films as electrode for AlN thin films Martin F, Muralt P, Dubois MA |
953 - 956 |
Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments de la Mata BG, Dowsett MG, Morris RJH |
957 - 961 |
Effects of pulsing parameters on production and distribution of macroparticles in cathodic vacuum arc deposition Hu YW, Li LH, Dai H, Li XL, Cai X, Chu PK |
962 - 965 |
Influence of layer thickness and compositional variations on the electrorefractive properties of a quantum well polarization-conversion modulator Ristic S, Jaeger NAF |
966 - 969 |
Working pressure induced structural and mechanical properties of nanoscale ZrN/W2N multilayered coatings Li DJ, Wang MX, Zhang JJ, Yang J |
970 - 973 |
Low-voltage resistive switching of polycrystalline SrZrO3 : Cr thin films grown on Si substrates by off-axis rf sputtering Park JW, Park JW, Yang MK, Jung K, Kim DY, Lee JK |
974 - 977 |
Effect of oxygen incorporation on structural and properties of Ti-Si-N nanocomposite coatings deposited by reactive unbalanced magnetron sputtering Ding XZ, Zeng XT, Liu YC, Zhao LR |
978 - 987 |
Direct observations of rapid diffusion of Cu in Au thin films using in situ x-ray diffraction Elmer JW, Palmer TA, Specht ED |
988 - 994 |
Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma Walkiewicz-Pietrzykowska A, Espinos JP, Gonzalez-Elipe AR |
995 - 1000 |
Understanding ion-milling damage in Hg1-xCdxTe epilayers Wang CZ, Smith DJ, Tobin S, Parodos T, Zhao J, Chang Y, Sivananthan S |
1001 - 1004 |
InGaN/GaN blue light emitting diodes with modulation-doped AlGaN/GaN heterostructure layers Chen CH |
1005 - 1011 |
Tunable hydrophilicity on a hydrophobic fluorocarbon polymer coating on silicon Kolari K, Hokkanen A |
1012 - 1015 |
Plasma etching of proton-exchanged lithium niobate Hu H, Milenin AP, Wehrspohn RB, Hermann H, Sohler W |
1016 - 1019 |
Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes Nee TE, Wang JC, Shen HT, Lin CH, Wu YF |
1020 - 1023 |
Layer structure of ultrathin Ag films on Ni/Pt(111) Ho HY, Chen YJ, Su CW, Chen RH, Shern CS |
1024 - 1030 |
Evaluation of the shapes of Auger- and secondary-electron line scans across interfaces with the logistic function Wight SA, Powell CJ |
1031 - 1035 |
Dependence of the electrical properties of the ZnO thin films grown by atomic layer epitaxy on the reactant feed sequence Lee C, Lim J |
1036 - 1043 |
Spectroellipsometric analysis of CHF3 plasma-polymerized fluorocarbon films Easwarakhanthan T, Beyssen D, Le Brizoual L, Bougdira J |
1044 - 1050 |
Characterization of a methyl radical source for ultrahigh vacuum thin film growth studies Gold JS, Lannon JM, Ziemer KS, Guntu M, Tolani VL, Stinespring CD |
1051 - 1054 |
Effect of thermal annealing on the metastable optical properties of GaN thin films Chang YC, Kolbas RM, Reitmeier ZJ, Davis RF |
1055 - 1066 |
Low energy focused ion beam system design Rauscher M, Plies E |
1067 - 1072 |
Reactive ion beam etching of HfO2 film and removal of sidewall redeposition Wang XD, Liu Y, Xu XD, Fu SJ, Cui Z |
1073 - 1082 |
Oxidation threshold in silicon etching at cryogenic temperatures Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ |
1083 - 1090 |
Evolution of film temperature during magnetron sputtering Shaginyan LR, Han JG, Shaginyan VR, Musil J |
1091 - 1095 |
Stress evolution as a function of substrate bias in rf magnetron sputtered yttria-stabilized zirconia films Piascik JR, Thompson JY, Bower CA, Stoner BR |
1096 - 1099 |
Gallium nitride thin films deposited by radio-frequency magnetron sputtering Maruyama T, Miyake H |
1100 - 1106 |
Integrated active transient thermography for rapid nondestructive analysis of sputtering target bond integrity Wickersham CE |
1107 - 1111 |
Effect of grain orientation on tantalum magnetron sputtering yield Zhang Z, Kho L, Wickersham CE |
1112 - 1118 |
Physical-vapor deposition flux-distribution calculations for static and rotating substrates: Derivation of the deposition geometry for optimal film-thickness uniformity Teeter G |
1119 - 1127 |
Conceptual design of a deposition system for uniform and combinatorial synthesis of multinary thin-film materials via open-boat physical-vapor deposition Teeter G |
1128 - 1135 |
Structural and electrochromic characterizations of pulsed laser deposited TaxW1-xO3-x/2 films Yang DF |
1136 - 1140 |
Extreme ultraviolet binary phase gratings: Fabrication and application to diffractive optics Salmassi F, Naulleau PP, Gullikson EM, Olynick DL, Liddle JA |
1141 - 1146 |
High efficiency SiO2-TiO2 hybrid sol-gel antireflective coating for infrared applications Brinley E, Seal S, Folks R, Braunstein E, Kramer L, Seal S |
1147 - 1147 |
Comment on "Nanoscale fatigue and fracture toughness measurement of multilayered thin film structures for digital micromirror devices 99 [J. Vac. Sci. Technol. A 22, 1397 (2004)] Malzbender J |
1148 - 1150 |
Performance of a hot-cathode-ionization-gauge head with correcting electrode and shield tube, operated with an automated-pressure-compensating circuit in a synchrotron radiation environment Saeki H, Magome T, Shoji Y |
1151 - 1151 |
Surface roughness in XeF2 etching of a-Si/c-Si(100) (vol 23, pg 126, 2005) Stevens AAE, Beijerinck HCW |
1154 - 1154 |
Papers from the 52nd International Symposium of AVS - 30 October 4 November 2005, Boston, Massachusetts - Preface Lucovsky G |
1156 - 1160 |
Effect of nitrogen on the photocatalytic activity of TiOxNy thin films Prabakar K, Takahashi T, Nezuka T, Nakashima T, Kubota Y, Fujishima A |
1161 - 1165 |
Sputtering pressure dependent photocatalytic properties of TiO2 thin films Takahashi T, Prabakar K, Nezuka T, Yamazaki T, Nakashima T, Kubota Y, Fujishima A |
1166 - 1171 |
Role of low-level impurities and intercalated molecular gases in the alpha particle radiolysis of polytetrafluoroethylene examined by static time-of-flight secondary-ion-mass spectrometery Fisher GL, Szakal C, Wetteland CJ, Winograd N |
1172 - 1178 |
Time-of-flight secondary ion mass spectrometry measurements of a fluorocarbon-based self-assembled monoloyer on Si Ohlhausen JA, Zavadil KR |
1179 - 1184 |
Thin oxide-free phosphate films of composition formed on the surface of vanadium metal and characterized by x-ray photoelectron spectroscopy Asunskis DJ, Sherwood PMA |
1185 - 1190 |
Effect of probe tip size on atomic force microscopy roughness values for very smooth samples Gondran CFH, Michelson DK |
1191 - 1196 |
Exploring the collective dynamics of lipid membranes with inelastic neutron scattering Rheinstadter MC, Seydel T, Haussler W, Salditt T |
1197 - 1202 |
Surface modification of silicon and polydimethylsiloxane surfaces with vapor-phase-deposited ultrathin fluorosilane films for biomedical nanodevices Bhushan B, Hansford D, Lee KK |
1203 - 1207 |
Time-of-flight secondary ion mass spectrometry chemical imaging analysis of micropatterns of streptavidin and cells without labeling Lee TG, Shon HK, Lee KB, Kim J, Choi IS, Moon DW |
1208 - 1212 |
Metal organic chemical vapor deposition of ZrO2 thin films using the single precursor zirconium 3-methyl-3-pentoxide, Zr(mp)(4) Cho W, Jang HS, An KS, Lee YK, Chung TM, Kim CG, Kim Y, So BS, Hwang JH, Jung D |
1213 - 1217 |
Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films Li XN, Asher SE, Limpijumnong S, Zhang SB, Wei SH, Barnes TM, Coutts TJ, Noufi R |
1218 - 1222 |
Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction Johnson-Steigelman HT, Brinck AV, Chang JP, Lyman PF |
1223 - 1227 |
Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells Lai FI, Kuo SY, Wang JS, Kuo HC, Wang SC, Wang HS, Liang CT, Chen YF |
1228 - 1232 |
Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties Jia HP, Gowrisanker S, Pant GK, Wallace RM, Gnade BE |
1233 - 1237 |
Role of defects at nanoscale ZnO and Cu(In,Ga)Se-2 semiconductor interfaces Strzhemechny YM |
1238 - 1242 |
Interstitial oxygen-related defects and current leakage in trench metal-oxide-semiconductor field-effect transistor on epi/As++ structure Wang Q, Daggubati M, Paravi H, Yu R, Zhang XF |
1243 - 1248 |
Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs Gergel-Hackett N, Majumdar N, Martin Z, Swami N, Harriott LR, Bean JC, Pattanaik G, Zangari G, Zhu Y, Pu I, Yao Y, Tour JM |
1249 - 1251 |
Modeling of InAs/GaAs self-assembled heterostructures: Quantum dot to quantum ring transformation Filikhin I, Vlahovic B, Deyneka E |
1252 - 1257 |
Comparison of a dominant electron trap in n-type and p-type GaNAs using deep-level transient spectroscopy Johnston SW, Kurtz SR |
1258 - 1269 |
Surface characterization of human hair using tapping mode atomic force microscopy and measurement of conditioner thickness distribution Lodge RA, Bhushan B |
1270 - 1276 |
Replication-based fabrication for an optical device that incorporates vertically curved structures Lee MW, Lim KJ, Choi CH, Jo SB, Lee SG, Lee EH, Park SG, O BH |
1277 - 1282 |
Copper electroplating to fill blind vias for three-dimensional integration Spiesshoefer S, Patel J, Lam T, Cai L, Polamreddy S, Figueroa RF, Burkett SL, Schaper L, Geil R, Rogers B |
1283 - 1288 |
Aspect ratio dependent etching lag reduction in deep silicon etch processes Lai SL, Johnson D, Westerman R |
1289 - 1292 |
Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness Daggubati M, Sim G, Long D, Paravi H, Wang Q |
1293 - 1296 |
Fabrication of high precision demultiplexer using embossing technique with thermal curable polymers Choi CH, Lee MW, O BH, Lee SG, Park SG, Lee EH |
1297 - 1301 |
Effects of various oxidizers on chemical mechanical polishing performance of nickel for microelectromechanical system applications Kim NH, Choi GW, Seo YJ, Lee WS |
1302 - 1307 |
Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond Hickey DP, Kuryliw E, Siebein K, Jones KS, Chodelka R, Elliman R |
1308 - 1313 |
End-pointing chamber clean by calorimetric probing of process effluent Chen IS, Neuner JW, Welch JJ, Chen PSH, DiMeo F |
1314 - 1317 |
Synthesis and purification of single-walled carbon nanotubes by methane decomposition over iron-supported catalysts Kim JS, Kim GH, Kim CI |
1318 - 1322 |
Growth of carbon nanotube bundle arrays on silicon surfaces Bronikowski MJ, Manohara HM, Hunt BD |
1323 - 1326 |
Temperature-induced control of aspect ratio of gold nanorods Park HJ, Ah CS, Kim WJ, Choi IS, Lee KP, Yun WS |
1327 - 1331 |
Controlled gold nanoparticle assembly on DNA molecule as template for nanowire formation Kim HJ, Roh Y, Hong B |
1332 - 1335 |
Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles Ko TS, Chu CP, Chen HG, Lu TC, Kuo HC, Wang SC |
1336 - 1339 |
Synthesis of Au nanotubes with SiOx nanowires as sacrificial templates Lu MY, Chang YC, Chen LJ |
1340 - 1343 |
High-voltage parallel writing on iron nitride thin films Farkas N, Ehrman JD, Evans EA, Ramsier RD, Dagata JA |
1344 - 1348 |
Formation of large-area nanostructures on Si and Ge surfaces during low energy ion beam erosion Ziberi B, Frost F, Rauschenbach B |
1349 - 1355 |
Quantum-dot nanodevices with carbon nanotubes Ishibashi K, Moriyama S, Tsuya D, Fuse T, Suzuki M |
1356 - 1359 |
Optical activation of implanted impurities in ZnS nanowires Stichtenoth D, Schwen D, Muller S, Borchers C, Ronning C |
1360 - 1365 |
Some aspects of dissipation mechanisms in chlorine containing capacitively coupled discharges Franz G |
1366 - 1372 |
Particle-in-cell simulations of planar and cylindrical Langmuir probes: Floating potential and ion saturation current Iza F, Lee JK |
1373 - 1379 |
Dry etching of TaN/HfO2 gate-stack structure in BCl3/Ar/O-2 inductively coupled plasmas Shin MH, Park MS, Lee NE, Kim J, Kim CY, Ahn J |
1380 - 1385 |
Effects of N-2 addition on chemical dry etching of silicon oxide layers in F-2/N-2/Ar remote plasmas Hwang JY, Kim DJ, Lee NE, Jang YC, Bae GH |
1386 - 1394 |
Effect of different frequency combination on ArF photoresist deformation and silicon dioxide etching in the dual frequency superimposed capacitively coupled plasmas Lee CH, Kim DH, Lee NE, Kwon GC |
1395 - 1398 |
Surface etching mechanism of Bi4-xLaxTi3O12 thin films using quadrupole mass spectroscopy Kim JG, Kim GH, Kim CI |
1399 - 1403 |
Etching characteristics of LaNiO3 thin films in BCl3/Ar gas chemistry Kim GH, Kim CI |
1404 - 1409 |
Wafer level microarcing model in 90 nm chemical-vapor deposition low-k via etch on 300 mm silicon-on-insulator substrate Cong H, Low CH, Pradeep YR, Zhang X, Chandima P, Liu WP, Tan JB, Hsia LC |
1410 - 1413 |
Cold atmospheric plasma in nitrogen and air generated by the hybrid plasma source Barankova H, Bardos L, Soderstrom D |
1414 - 1420 |
Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching Noda S, Ozaki T, Samukawa S |
1421 - 1424 |
Characteristics of large-diameter plasma using a radial-line slot antenna Tian C, Nozawa T, Ishibasi K, Kameyama H, Morimoto T |
1425 - 1430 |
Application of the shaped electrode technique to a large area rectangular capacitively coupled plasma reactor to suppress standing wave nonuniformity Sansonnens L, Schmidt H, Howling AA, Hollenstein C, Ellert C, Buechel A |
1431 - 1440 |
Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film Momonoi Y, Yonekura K, Izawa M |
1441 - 1447 |
Reactive magnetron sputtering deposition and columnar growth of nc-TiC/a-C : H nanocomposite coatings Galvan D, Pei YT, De Hosson JTM |
1448 - 1453 |
Tribological behavior and thermal stability of TiC/a-C : H nanocomposite coatings Pei YT, Galvan D, De Hosson JTM |
1454 - 1459 |
Hot electrons at metal-organic interface: Time-resolved two-photon photoemission study of phenol on Ag(111) Ryu S, Chang J, Kwon H, Kim SK |
1460 - 1463 |
Adsorption of sulfur dioxide on Zircaloy-4 at 300 K Stojilovic N, Ehrman JD, Ramsier RD |
1464 - 1467 |
Surface and bulk electronic structures of Heusler-type Fe2VAl Miyazaki H, Soda K, Yagi S, Kato M, Takeuchi T, Mizutani U, Nishino Y |
1468 - 1473 |
Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing Ko JH, Jang CH, Kim SH, Song YJ, Lee NE |
1474 - 1479 |
Laser assisted and wet chemical etching of silicon nanostructures Kolasinski KW, Mills D, Nahidi M |
1480 - 1483 |
Ostwald ripening of manganese silicide islands on Si(001) Krause MR, Stollenwerk A, Licurse M, LaBella VP |
1484 - 1488 |
Effect of self-assembled monolayer film order on nanofriction Sambasivan S, Hsieh S, Fischer DA, Hsu SM |
1489 - 1493 |
Irradiation effect of nitrogen ion beam on hydrogenated amorphous carbon films Watanabe Y, Katoh S, Kitazawa N |
1494 - 1499 |
Fabrication of micropatterned mesoporous silica film on a flexible polymer substrate through pattern transfer and subsequent photocalcination Hozumi A, Kizuki T, Inagaki M, Shirahata N |
1500 - 1504 |
X-ray photoemission spectroscopy and Fourier transform infrared characterizations Of C-60 states in C-60 doped conducting polymers Kato H, Takemura S, Iwasaki K, Watanabe Y, Nanba N, Hiramatsu T, Nishikawa O, Taniguchi M |
1505 - 1508 |
X-ray photoemission spectroscopy characterization of electrochemical growth of conducting polymer on oxidized Si surface Kato H, Takemura S, Takakuwa N, Ninomiya K, Watanabe T, Watanabe Y, Nanba N, Hiramatsu T |
1509 - 1513 |
Fe(001) thin films for x-ray diffraction and terahertz emission studies Meserole CA, Fisher GL, Hilton DJ, Jia QX, Averitt RD, Funk DJ, Taylor AJ |
1514 - 1517 |
Effect of Cl-2/Ar gas mixing ratio on (Pb,Sr)TiO3 thin film etching behavior in inductively coupled plasma Kim GH, Kim CI |
1518 - 1523 |
Thermochromic La1-xSrxMnO3 (x=0.1, 0.175, and 0.3) smart coatings grown by reactive pulsed laser deposition Soltani M, Chaker M, Jiang XX, Nikanpour D, Margot J |
1524 - 1529 |
TiN and TiO2 : Nb thin film preparation using hollow cathode sputtering with application to solar cells Guo SY, Shafarman WN, Delahoy AE |
1530 - 1534 |
Inhomogeneous rarefaction of the process gas in a direct current magnetron sputtering system Jimenez F, Ekpe SD, Dew SK |
1535 - 1539 |
Characteristics of atomic layer deposited TiO2 films and their photocatalytic activity Pheamhom R, Sunwoo C, Kim DH |
1540 - 1545 |
Effects of TiOx physical vapor deposition parameters on the preferred orientation and adhesion of Pt films on gamma-Al2O3 Derniaux E, Kayser P, Gageant C, Sanchez C, Boivin D |
1546 - 1551 |
Birefringent films for contrast enhancement of liquid crystal on silicon projection systems Hendrix K, Tan K, Duelli M, Shemo D, Tilsch M |
1552 - 1555 |
Compliant system of polyimide microwires for cryogenic detector applications Allen CA, Franz DE, Moseley SH |
1556 - 1559 |
Vacuum measurement by carbon nanotube field emission Choi IM, Woo SY, Hong SS |
1560 - 1567 |
Spallation Neutron Source ring vacuum systems Mapes M, Hseuh HC, Rank J, Smart L, Todd R, Weiss D |
1568 - 1571 |
Improvement of materials surface properties by rf glow discharge treatment Huang TB, Chen X, Tian XQ, Cha LZ |
1572 - 1577 |
High temperature outgassing tests on materials used in the DIII-D tokamak Holtrop KL, Hansink MJ |
1578 - 1583 |
Pressure dependence of laminar-turbuient transition in gases Hinkle LD, Muriel A, Novopashin SA |
1584 - 1591 |
Computational fluid dynamic model of a tapered Holweck vacuum pump operating in the viscous and transition regimes. I. Vacuum performance Giors S, Colombo E, Inzoli F, Subba F, Zanino R |
1592 - 1596 |
Selective water vapor cryopumping through argon Kryukov AP, Podcherniaev O, Hall PH, Plumley DJ, Levashov VY, Shishkova IN |
1597 - 1600 |
Effect of heat on the pumping performance of cryopump Cheng HP, Shen YH |
1601 - 1604 |
ISAC target vacuum system Yosifov D, Sekachev I |
1605 - 1609 |
Measuring the thickness of organic/polymer/biological films on glass substrates using spectroscopic ellipsometry Tompkins HG, Tiwald T, Bungay C, Hooper AE |
1610 - 1612 |
Hot electron transport across manganese silicide layers on the Si(001) surface Stollenwerk AJ, Krause MR, Moore R, LaBella VP |
1613 - 1617 |
Optimization and deposition of CdS thin films as applicable to TiO2/CdS composite catalysis Prabakar K, Takahashi T, Nakashima T, Kubota Y, Fujishima A |
1618 - 1622 |
Laser processing of polymer nanocomposite thin films Sellinger AT, Leveugle EM, Gogick K, Zhigilei LV, Fitz-Gerald JM |
1623 - 1626 |
Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition Erlacher A, Lukaszew AR, Jaeger H, Ullrich B |
1627 - 1630 |
Quantitative assessment of diffusivity and specularity of surface-textured reflectors for light extraction in light-emitting diodes Xi Y, Li X, Kim JK, Mont F, Gessmann T, Luo H, Schubert EF |
1631 - 1634 |
Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates Mastro MA, Holm RT, Bassim ND, Gaskill DK, Culbertson JC, Fatemi M, Eddy CR, Henry RL, Twigg ME |
1635 - 1639 |
Low-temperature synthesis of silica-enhanced gallium nitride nanowires on silicon substrate Hsieh CH, Chou LJ, Chueh YL, Chang MT |
1640 - 1643 |
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN Fenwick WE, Asghar A, Gupta S, Kang H, Strassburg M, Dietz N, Graham S, Kane MH, Ferguson IT |
1644 - 1647 |
Observation of crystallite formation in ferromagnetic Mn-implanted Si Awo-Affouda C, Bolduc M, Huang MB, Ramos F, Dunn KA, Thiel B, Agnello G, LaBella VP |
1648 - 1651 |
Annealing temperature effects on the structure of ferromagnetic Mn-implanted Si Bolduc M, Awo-Affouda C, Ramos F, LaBella VP |
1652 - 1654 |
Interface stability between amorphous ferromagnetic layer and Al oxide barrier in tunneling magnetoresistive films at elevated temperatures Peng XL, Kvitek D, Morone A, Axdal SH, Xue S |
1655 - 1659 |
Effect of substrate material and bias on properties of TiN films deposited in the hybrid plasma reactor Bardos L, Barankova H, Gustavsson LE |
1660 - 1663 |
Para-sexiphenyl thin films grown by hot wall epitaxy on KCl(001) substrates Andreev AY, Montaigne A, Hlawacek G, Sitter H, Teichert C |
1664 - 1667 |
Preparation and characterization of transparent conducting ZnTe : Cu back contact interface layer for CdS/CdTe solar cell for photoelectrochemical application Avachat US, Dhere NG |
1668 - 1675 |
CuPc : C-60 blend film: A photoemission investigation Lozzi L, Granato V, Picozzi S, Simeoni M, La Rosa S, Delly B, Santucci S |
1676 - 1683 |
Real-time spectroscopic ellipsometry studies of the growth of amorphous and epitaxial silicon for photovoltaic applications Levi DH, Teplin CW, Iwaniczko E, Yan Y, Wang TH, Branz HM |
1684 - 1689 |
Reduction of laser-induced roughness in a-Si : H surfaces for vacuum compatible lithography Jacobs RN, Robinson EW, Stoltz AJ, Dinan JH, Salamanca-Riba L |