Titanium nitride (TiN) is well known for its excellent conductivity, inertness, and good optical reflectivity at long wavelengths. These properties make it a potential IR-reflective back contact material suitable for ultrathin Cu(In, Ga)Se-2 (CIGS) solar cells. Using a pulsed power, 12 cm linear hollow cathode source fitted with Ti targets and with N-2 as the reactive gas, TiN films were deposited on Mo-coated glass. The static deposition rate was 50 nm/min for a sputtering power of only 500 W. The high deposition rate indicates the advantage of the reactive environment, hollow cathode sputtering method, i.e., the reactive gas is excluded from the target. Electrical, optical, and physical properties of the films were measured. Resistivities in the range of 50=60 mu Omega cm were achieved. Reflectance and x-ray diffraction measurements were conducted, and the effects of deposition parameters such as substrate bias and substrate temperature were studied. The optical emission from N and Ti atoms in the plasma was also studied. CIGS solar cells were successfully fabricated on TiN and a c onversion efficiency of 12.3% was achieved. Transparent and moderately conductive TiO2 films doped with Nb were also prepared. The electrical and optical properties of these films are reported, and the reflectance of a-Si solar cells was reduced via incorporation of a TiO2: Nb layer. (c) 2006 American Vacuum Society.