Ballistic electron emission microscopy (BEEM) has been performed on MnSi/Si(001) Schottky diodes at 80 K to study the hot electron transport properties. The BEEM spectra best fit the thermally broadening 5/2 power law model with two threshold heights at 0.71 and 0.86 eV, indicating a complex interface band structure. In addition, the normalized BEEM current in the MnSi overlayer was found to be approximately seven times less than is observed in Au/Si(001) samples of similar thicknesses, indicating a larger amount of hot electron scattering in the MnSi/Si(001) samples. (c) 2006 American Vacuum Society.