Using thin-film semiconductors as active photonic interfaces, an all-optical laser digitizer can be realized. Based on these results, zinc telluride (ZnTe) has attracted our interest since it is an appealing semiconductor for applications in photonics. Low-temperature pulsed-laser deposition (PLD), i.e., without substrate heater, was employed to deposit amorphous thin-film ZnTe on silicon (Si) and glass substrates using either the 1064 or 532 nm emission lines of a nanosecond-pulsed Nd:YAG laser. In spite of the predominantly amorphous sample textures, x-ray-diffraction experiments and analysis of the surface roughness including outgrowth distribution using atomic force microscopy reveal major differences in surface morphology and crystal textures between samples formed at these two laser wavelengths. This indicates wavelength-dependent ablation and wavelength-dependent PLD mechanisms with nanosecond pulses. Our observations contribute to a better understanding of PLD and provide tools to fine-tune and optimize the optoelectronic and photonic properties of ZnTe amorphous thin films as well as their incorporation into Si-based technologies in order to fabricate cost-effective and functional optoelectronic devices. (c) 2006 American Vacuum Society.