Journal of Crystal Growth

Journal of Crystal Growth, Vol.209, No.2-3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (68 articles)

225 - 231	Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE Leys MR
232 - 236	Molecular dynamics simulation of III-V compound semiconductor growth with MBE Nakamura M, Fujioka H, Ono K, Takeuchi M, Mitsui T, Oshima M
237 - 241	Growth of novel InP-based materials by He-plasma-assisted epitaxy Pinkney H, Thompson DA, Robinson BJ, Qian L, Benjamin SD, Smith PWE
242 - 246	Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE Ouchi K, Mishima T
247 - 251	Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice Georgiev N, Mozume T
252 - 257	Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum Otsuka N, Nishizawa J, Kikuchi H, Oyama Y
258 - 262	Magic numbers in Ga clusters on GaAs (001) surface Tsukamoto S, Koguchi N
263 - 266	In situ etching using a novel precursor of tertiarybutylchloride (TBCl) Kondow M, Shi BQ, Tu CW
267 - 271	Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: trisdimethylamino-arsine Suemasu T, Sakai M, Hasegawa F
272 - 278	Alternative N-, P- and As-precursors for III/V-epitaxy Stolz W
279 - 285	Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe Prete P, Lovergine N, Zanotti-Fregonara C, Mancini AM, Smith LM, Rushworth SA
286 - 289	Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide Coward KM, Jones AC, Pemble ME, Joyce TB, Smith LM
290 - 296	In situ optical monitoring for SiGe epitaxy Robbins DJ, Pickering C, Russell J, Carline RT, Dann AW, Marrs AD, Glasper JL
297 - 301	Optical second harmonic generation studies of epitaxial growth of Si and SiGe Tok ES, Woods NJ, Price RW, Taylor AG, Zhang J
302 - 305	Transition from "dome" to "pyramid" shape of self-assembled GeSi islands Vostokov NV, Dolgov IV, Drozdov YN, Krasil'nik ZF, Lobanov DN, Moldavskaya LD, Novikov AV, Postnikov VV, Filatov DO
306 - 310	Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface Price RW, Tok ES, Zhang J
311 - 314	Growth mode of thin Si1-xGex films on Si (100) monitored by spectroscopic ellipsometry Akazawa H
315 - 320	Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD Han P, Sakuraba M, Jeong YC, Bock K, Matsuura T, Murota J
321 - 326	RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence Tok ES, Woods NJ, Zhang J
327 - 330	Observation and control of surface reaction during Si molecular layer growth Nishizawa J, Murai A, Ohizumi T, Kurabayashi T, Ohtsuka K, Yoshida T
331 - 334	Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system Ohtsuka K, Yoshida T, Oizumi T, Murai A, Kurabayashi T, Nishizawa J
335 - 338	New approach to low-temperature Si epitaxy by using hot wire cell method Watahiki T, Yamada A, Konagai M
339 - 344	CBE and MOCVD growth of GaInNAs Miyamoto T, Kageyama T, Makino S, Schlenker D, Koyama F, Iga K
345 - 349	Mechanism analysis of improved GaInNAs optical properties through thermal annealing Kitatani T, Nakahara K, Kondow M, Uomi K, Tanaka T
350 - 354	Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy Kageyama T, Miyamoto T, Makino S, Koyama F, Iga K
355 - 363	Structure of clean and arsenic-covered GaN(0001) surfaces Ramachandran V, Lee CD, Feenstra RM, Smith AR, Northrup JE, Greve DW
364 - 367	Plasma-assisted molecular beam epitaxy of GaN : In film on sapphire(0001) having the single polarity of (0001) Sonoda S, Shimizu S, Balakrishnan K, Okumura H
368 - 372	Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy Araki T, Chiba Y, Nobata M, Nishioka Y, Nanishi Y
373 - 377	CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine Sasaki M, Yonemura S, Nakayama T, Shimoyama N, Suemasu T, Hasegawa F
378 - 381	Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy Morishima S, Maruyama T, Akimoto K
382 - 386	High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy Kimura R, Gotoh Y, Matsuzawa T, Takahashi K
387 - 391	Improved properties of polycrystalline GaN grown on silica glass substrate Hiroki M, Asahi H, Tampo H, Asami K, Gonda S
392 - 395	Initial growth monitoring of GaN epitaxy on 6H-SiC by metal-organic molecular beam epitaxy Honda T, Fujita N, Maki K, Yamamoto Y, Kawanishi H
396 - 400	Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy Shen XQ, Ramvall P, Riblet P, Aoyagi Y, Hosi K, Tanaka S, Suemune I
401 - 405	RF MBE growth of quasi-InGaN alloys by using multilayer structure Cho SH, Okumura H
406 - 409	Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma Inushima T, Ashino T, Murano K, Shiraishi T, Davydov VY, Ohoya S
410 - 414	Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD Tanaka Y, Hasebe Y, Inushima T, Sandhu A, Ohoya S
415 - 418	Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam Epitaxy Ferro G, Okumura H, Yoshida S
419 - 423	Structural characterization of Al1-xInxN lattice-matched to GaN Kariya M, Nitta S, Yamaguchi S, Kashima T, Kato H, Amano H, Akasaki I
424 - 430	Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE Kroner P, Baumeister H, Rieger J, Veuhoff E, Marti O, Heinecke H
431 - 434	The measurement of work function on GaAs (001) surface during MBE growth by scanning electron microscopy Higashino T, Osaka J, Tanahashi K, Kikuchi M, Kawamura Y, Inoue N, Homma Y
435 - 439	Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy in space ultra-vacuum Freundlich A, Horton C, Vilela MF, Sterling M, Ignatiev A, Neu G, Teisseire M
440 - 444	Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers Kizuki H, Kouji Y, Hayafuji N, Kajikawa Y
445 - 449	Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy Mozume T, Georgiev N, Nishimura T, Yoshida H, Nishikawa S, Neogi A
450 - 453	Structural dependence of intersubband absorption of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP Katayama T, Kawamura Y, Takasaki H, Yamamoto A, Inoue N
454 - 458	Electrical and optical characterization of (111) oriented GaP/Si diodes grown by CBE Ohlsson BJ, Carlsson SB, Gustafsson A, Hakanson U, Litwin A, Samuelson L
459 - 462	Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy Li W, Likonen J, Haapamaa J, Pessa M
463 - 470	MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits Gibis R, Kizuki H, Albrecht P, Harde P, Urmann G, Kaiser R, Kunzel H
471 - 475	Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit Rigo C, Coriasso C, Campi D, Stano A, Cacciatore C, Re D, Fornuto G, Soldani D, De Franceschi R, Ghiglieno F, Vallone M, Valenti P, Zucchelli L, Lupo S, Gambini P
476 - 480	Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs Benchimol JL, Mba J, Sermage B, Riet M, Blayac S, Berdaguer P, Duchenois AM, Andre P, Thuret J, Gonzalez C, Konczykowska A
481 - 485	Development of GaAs space solar cells by high growth rate MOMBE/CBE Freundlich A, Newman F, Vilela MF, Monier C, Aguilar L, Street S
486 - 491	Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE) Balmer RS, Martin T, Kane MJ, Maclean JO, Whitaker TJ, Ayling SG, Calcott PDJ, Houlton M, Newey JP, O'Mahony SJ
492 - 498	Dynamic behavior of group III and V organometallic sources and nanostructure fabrication by supersonic molecular beams Cui J, Ozeki M, Ohashi M
499 - 503	MOMBE selective infill growth of InP/GaInAs for quantum dot formation Gibis R, Schelhase S, Steingruber R, Urmann G, Kunzel H, Thiel S, Stier O, Bimberg D
504 - 508	Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy Mano T, Watanabe K, Tsukamoto S, Fujioka H, Oshima M, Koguchi N
509 - 512	Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process Matsuzaki Y, Yamada A, Konagai M
513 - 517	The growth mechanism of silicon nanowires and their quantum confinement effect Feng SQ, Yu DP, Zhang HZ, Bai ZG, Ding Y
518 - 521	Fabrication of selectively grown II-VI widegap semiconductor photonic dots on (001)GaAs with MOMBE Ueta A, Avramescu A, Suemune I, Machida H, Shimoyama N
522 - 525	Effects of oxygen plasma condition on MBE growth of ZnO Sakurai K, Kanehiro M, Nakahara K, Tanabe T, Fujita S, Fujita S
526 - 531	Nitrogen-induced defects in ZnO : N grown on sapphire substrate by gas source MBE Iwata K, Fons P, Yamada A, Matsubara K, Niki S
532 - 536	Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)alpha-Al2O3 Fons P, Iwata K, Niki S, Yamada A, Matsubara K, Watanabe M
537 - 541	Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry Hong SK, Ko HJ, Chen YF, Yao T
542 - 546	Growth of ZnSe single crystals Fang CS, Gu QT, Wei JQ, Pan QW, Shi W, Wang JY
547 - 551	Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization Zhou YK, Asahi H, Ayabe A, Takenaka K, Fushida M, Asami K, Gonda S
552 - 555	Formation and structural investigation of MnSb dots on S-passivated GaAs(001) substrates Mizuguchi M, Akinaga H, Ono K, Oshima M
556 - 560	Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs Ono K, Uragami T, Mizuguchi M, Fujioka H, Oshima M, Tanaka M, Akinaga H
561 - 565	The effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(100) substrates Uragami T, Ono K, Mizuguchi M, Fujioka H, Tanaka M, Oshima M
VII - VII	Chemical beam epitaxy and related growth techniques 1999 - Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Japan, July 28-30, 1999 - Preface Sugiura H, Konagai M, Asahi H