Journal of Crystal Growth, Vol.209, No.2-3, 410-414, 2000
Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD
The substrate dependence of AIN films grown by LP-MOCVD was investigated. On the sapphire c-plane hexagonal,UN starts to grow at 600 degrees C, where its c-axis is on the sapphire c-plane, When the temperature increases to 1050 degrees C, the c-axis becomes parallel to the sapphire c-axis. On the 3C-SiC substrate, hexagonal AlN grows with its c-axis on the (1 0 0) plane of SIG.