Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementation of Fe-doped semi-insulating layers and selective area deposition of GaInAsP for the whole composition range are of concern. Low-loss semi-insulating waveguides were fabricated for optically interconnecting and electrically isolating different devices at deposition conditions that have proven adequate for selective area growth and, simultaneously, for effective suppression of Fe-movement. Fabricated laser/waveguide butt-joints, a basic building block for any integrated photonic circuit, demonstrate the potential of metal organic molecular beam epitaxy to form practically ideal lateral growth interfaces without compromising on device performance.