We have proposed a new self-organized growth method for InGaAs quantum dots (QDs) using droplet epitaxy with highly dense Ga droplets. During the crystallization process of InGaAs in droplet epitaxy, the highly dense Ga droplets effectively prevented the two-dimensional growth of InGaAs. Phase-separation during annealing for the InAs-GaAs system resulted in the formation of high-quality InGaAs QDs in the upper part of the sample with a flat surface,