Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

Coward KM; Jones AC; Pemble ME; Joyce TB; Smith LM

Journal of Crystal Growth, Vol.209, No.2-3, 286-289, 2000

DOI10.1016/S0022-0248(99)00556-4 Export Citation

Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

Coward KM, Jones AC, Pemble ME, Joyce TB, Smith LM

Neopentyl iodide (NpI) has been shown to be an inefficient carbon-doping source for GaAs and AlGaAs, but is some two orders of magnitude more efficient in AlAs. This difference in NpI doping behaviour is attributed to a significant difference in the surface chemistry of NpI on AlAs, possibly due to a lack of reactive hydrogen during layer growth.

Keywords:chemical beam epitaxy;GaAs;AlGaAs;AlAs;carbon doping;neopentyl iodide