| 2651 - 2664 |
Supersonic Molecular-Beam Scattering as a Probe of Thin-Film Deposition Processes
Xia LQ, Jones ME, Maity N, Engstrom JR |
| 2665 - 2670 |
Effect of Surface Excitations in Determining the Inelastic Mean Free-Path by Elastic Peak Electron-Spectroscopy
Chen YF |
| 2671 - 2675 |
X-Ray Photoelectron-Spectroscopy Study of Submonolayer Native Oxides on HF-Treated Si Surfaces
Yano F, Hiraoka A, Itoga T, Kojima H, Kanehori K, Mitsui Y |
| 2676 - 2683 |
An X-Ray Photoelectron-Spectroscopy Study of the Interaction and Chemical Passivation of Chemically Etched (100) Oriented Hg1-xCdxTe (X=0.226) Utilizing Chromium and Aluminum
Williams JP, Wilks SP, Williams RH, Tarry HA |
| 2684 - 2688 |
Interface Exciton Luminescence - An Indication of Interface Inhomogeneities in Single GaAs/GaAlAs Heterostructures
Bessolov VN, Evstropov VV, Lebedev MV |
| 2689 - 2697 |
Application of High-Resolution Electron-Energy-Loss Spectroscopy to the Adsorption and the Photoreaction of Ch2I2 and Cd3Od on a Moox Thin-Film
He H, Nakamura J, Takehiro N, Tanaka K |
| 2698 - 2702 |
In-Situ Infrared Spectroscopic Study on the Role of Surface Hydrides and Fluorides in the Silicon Chemical-Vapor-Deposition Process
Chung CH, Moon SH, Rhee SW |
| 2703 - 2708 |
Characterization of Molecular-Beam Epitaxy-Grown Cdf2 Layers by X-Ray-Diffraction and CaF2-Sm Photoluminescence Probe
Sokolov NS, Faleev NN, Gastev SV, Yakovlev NL, Izumi A, Tsutsui K |
| 2709 - 2714 |
Thermal-Desorption Spectroscopy Study of HF/DF-Treated Si(100) Surfaces
Kinoshita K, Nishiyama I |
| 2715 - 2720 |
Modification of Surface Condition and Irradiation Effects of Synchrotron-Radiation on Photoexcited Etching of SiC
Terakado S, Ogura M, Suzuki S, Nakao M, Tanaka K |
| 2721 - 2725 |
Study of Electron-Beam Effects on Trimethylsilane Covered Si(100)
Ascherl MV, Campbell JH, Lozano J, Craig JH |
| 2726 - 2731 |
Thermogravimetric Analysis of Selected Condensed Materials on a Quartz-Crystal Microbalance
Phillips TE, Bargeron CB, Benson RC |
| 2732 - 2738 |
Microstructure and Characterization of Electron-Trapping Stimulable Phosphor SRS(Eu,Sm) Thin-Film on Glass
Hsieh TJ, Revay R, Brower D, Chi PH, Simons DS, Newbury DE, Robey SW |
| 2739 - 2741 |
New Method to Predict Corrosion Characteristics of Zn-Metallized Thin-Films for Film Capacitors
Na JG |
| 2742 - 2746 |
Origins of Atmospheric Contamination in Amorphous-Silicon Prepared by Very High-Frequency (70 MHz) Glow-Discharge
Kroll U, Meier J, Keppner H, Shah A, Littlewood SD, Kelly IE, Giannoules P |
| 2747 - 2752 |
An Actinometric Study of C2H2 Plasma Polymerization and Film Properties
Mota RP, Shiosawa T, Durrant SF, Demoraes MA |
| 2753 - 2757 |
In-Situ Measurements of the Recombination at the Crystalline Silicon Amorphous-Silicon Heterointerface by Time-Resolved Microwave Conductivity Measurements During Low-Temperature Annealing and Silane Plasma Exposure
Neitzert HC, Kunst M |
| 2758 - 2763 |
Change in Refractive-Index and in Chemical-State of Electron-Beam Irradiated Fluorinated Polyimide Films
Maruo YY, Sasaki S, Tamamura T |
| 2764 - 2771 |
Structural Investigation of Monolayer Sb on Si(100)-2X1 Utilizing a Monte-Carlo Simulation of Channeling and Channeled Ion Energy-Loss
Boshart MA, Bailes AA, Dygo A, Seiberling LE |
| 2772 - 2780 |
Chemical-Reactions of Triethylantimony on GaAs(100)
Heitzinger JM, Ekerdt JG |
| 2781 - 2786 |
Methane Adsorption and Hydrogen Isothermal Desorption-Kinetics on a C(001)-(1X1) Surface
Nishimori T, Sakamoto H, Takakuwa Y, Kono S |
| 2787 - 2790 |
Laterally Resolved Measurements of Cesium Iodide Quantum Yield
Dellorto T, Almeida J, Coluzza C, Conforto E, Destasio G, Margaritondo G, Paic G, Braem A, Piuz F, Tonner BP |
| 2791 - 2796 |
Modeling the Pump-Down of a Reversibly Adsorbed Phase .2. Multilayer Coverage
Redhead PA |
| 2797 - 2802 |
Phosphorus Impurities in Mgxzn1-Xte Alloys
Elakkad F, Naby MA, Omar MA |
| 2803 - 2807 |
Effect of the Composition and Anion Vacancies in the Band-Gap and Band Levels of Cu-in-Se-Te Thin-Films
Diaz R, Leon M |
| 2808 - 2813 |
Effects of Nitrogen Pressure and Ion Flux on the Properties of Direct-Current Reactive Magnetron-Sputtered Zr-N Films
Inoue S, Tominaga K, Howson RP, Kusaka K |
| 2814 - 2818 |
Effect of N-2(+) Ion-Bombardment on the Compositional Change and Residual-Stress of AlN Film Synthesized by Ion-Beam-Assisted Deposition
Kim IH, Kim SH |
| 2819 - 2826 |
X-Ray Photoelectron-Spectroscopy Study of the Difference Between Reactively Evaporated and Direct Sputter-Deposited Tin Films and Their Oxidation Properties
Prieto P, Kirby RE |
| 2827 - 2831 |
Ion-Beam-Assisted Deposition of Al Films on Si
Terrasi A, Ravesi S, Marcellino C, Spinella C, Pannitteri S |
| 2832 - 2835 |
Origin of Intrinsic Stress in Y2O3 Films Deposited by Reactive Sputtering
Choi HM, Choi SK |
| 2836 - 2842 |
Low-Energy (5-Less-Than-E(I)Less-Than-100 eV), High-Brightness, Ultrahigh-Vacuum Ion-Source for Primary Ion-Beam Deposition - Applications for Al and Ge
Kim YW, Petrov I, Ito H, Greene JE |
| 2843 - 2847 |
Preparation of Cubic Boron-Nitride Films by Radio-Frequency Bias Sputtering
Tsuda O, Yamada Y, Fujii T, Yoshida T |
| 2848 - 2855 |
Mass and Energy-Selected Ion-Beam for Deposition and Ion-Induced Surface Modifications
Kuttel OM, Groening P, Agostino RG, Schlapbach L |
| 2856 - 2862 |
Effect of Substrate Bias on the Properties of Diamond-Like Carbon-Films Deposited Using Unbalanced Magnetron Sputtering
Seo SC, Ingram DC, Richardson HH |
| 2863 - 2871 |
Chemical-Vapor-Deposition of Aluminum from Dimethylaluminumhydride (Dmah) - Characteristics of Dmah Vaporization and Al Growth-Kinetics
Kondoh E, Ohta T |
| 2872 - 2876 |
Deposition and Properties of Mo-N Films
Lin KL, Ho YJ |
| 2877 - 2883 |
Investigation of Polycrystalline CdTe Thin-Films Deposited by Physical Vapor-Deposition, Close-Spaced Sublimation, and Sputtering
Moutinho HR, Hasoon FS, Abulfotuh F, Kazmerski LL |
| 2884 - 2889 |
Effects of Atomic Chlorine Wall Recombination - Comparison of a Plasma Chemistry Model with Experiment
Meeks E, Shon JW, Ra Y, Jones P |
| 2890 - 2899 |
Power Required to Maintain an Electron in a Discharge - Its Use as a Reference Parameter in Magnetized High-Frequency Plasmas
Margot J, Moisan M, Fortin M |
| 2900 - 2907 |
Low-Temperature Deposition of Silicon-Nitride Films by Distributed Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition
Sitbon S, Hugon MC, Agius B, Abel F, Courant JL, Puech M |
| 2908 - 2913 |
Heating Uniformity of a Microwave-Discharge Plasma to Redistribute a Solid-Fuel Layer Inside a Cryogenic Target for Inertial Confinement Fusion
Chen CM, Norimatsu T, Izawa Y, Yamanaka T, Nakai S |
| 2914 - 2919 |
Plasma Chemical-Vapor-Deposition and Properties of Hard C3N4 Thin-Films
Veprek S, Weidmann J, Glatz F |
| 2920 - 2923 |
Automated Langmuir Probe Characterization of Methane/Hydrogen Low-Pressure Radio-Frequency Discharges in a Production Reactor
Cali FA, Herbert PA, Kelly WM |
| 2924 - 2929 |
High-Rate Low-Temperature Deposition of Silicon Dioxide Films by Remote Plasma-Enhanced Chemical-Vapor-Deposition Using Silicon Tetrachloride
Alonso JC, Ramirez SJ, Garcia M, Ortiz A |
| 2930 - 2934 |
Measurement of the Amount of Oxygen Generated by Quartz Source Walls in a SF6 Dense-Plasma - Application to a Helicon Reactor
Petri R, Sadeghi N, Henry D |
| 2935 - 2938 |
Thermal-Desorption Spectroscopic Analysis for Residual Chlorine on Al-Si-Cu After Cl-2 Electron-Cyclotron-Resonance Plasma-Etching
Teraoka Y, Aoki H, Nishiyama I, Ikawa E, Kikkawa T |
| 2939 - 2944 |
Fluid Simulations of Particle Contamination in Postplasma Processes
Garrity MP, Peterson TW, Garrett LM, Ohanlon JF |
| 2945 - 2949 |
Time-Resolved Fourier-Transform Infrared-Emission as a Plasma Diagnostic
Hancock G, Sucksmith JP |
| 2950 - 2953 |
Postplasma Particle Dynamics in a Gaseous Electronics Conference RF Reference Cell
Collins SM, Brown DA, Ohanlon JF, Carlile RN |
| 2954 - 2961 |
General Geometry Calculations of One-Stage Molecular-Flow Transmission Probabilities for Turbomolecular Pumps
Katsimichas S, Goddard AJ, Lewington R, Deoliveira CR |
| 2962 - 2971 |
Multicomponent Vapor Transport Model for Viscous, Transitional, and Molecular-Flow
Ernst MJ, Hemond HF |
| 2972 - 2979 |
High-Performance Pirani Vacuum Gauge
Shie JS, Chou BC, Chen YM |
| 2980 - 2985 |
Miniaturized Thin-Film Thermal Vacuum Sensor
Alvesteffer WJ, Jacobs DC, Baker DH |
| 2986 - 2990 |
Plasma Source Ion Nitriding - A New Low-Temperature, Low-Pressure Nitriding Approach
Lei MK, Zhang ZL |
| 2991 - 2993 |
First Thin-Film Realization of a Helicoidal Bianisotropic Medium
Robbie K, Brett MJ, Lakhtakia A |
| 2994 - 2996 |
Large Grain-Size CdTe-Films Grown on Glass Substrates at Low-Temperature
Zapatatorres M, Castrorodriguez R, Zapatanavarro A, Wallace JL, Pomes R, Pena JL, Farias MH |
| 2997 - 2999 |
Effect of Substrate Heating and High-Energy Heavy-Ion Irradiation on the Performance of Cr Films
Srivastav S, Jain A |
| 3000 - 3002 |
Al-Mg Alloy from a Beer Can as a Simple Source of Mg Metal for Evaporators in Ultrahigh-Vacuum Applications
Esposto FJ, Cory C, Griffiths K, Norton PR, Timsit RS |
| 3003 - 3003 |
Use of an Inexpensive Solid-State Differential Sensor as a 0-35 Mbar Pressure Gauge
Fleury M, Smullin LD |
