The compositional change and residual stress of aluminum nitride film synthesized by ion-assisted evaporation and sputtering are discussed in terms of ion bombardment. In the growth of AIN film, N-2(+) ion bombardment could increase the N incorporation probability and reduce oxygen impurities. The stoichiometric nitride was obtained at an arrival ratio of N/Al higher than 1.5, With increasing ion flux and energy the residual stress shows a tendency to shift from tensile to compressive stress. Except for the low region of ion flux and energy, the compressive stress shows a linear proportionality to the momentum parameter of incident ions defined as the product of ion flux and (ion energy)(1/2) in the ion beam assisted deposition process. The temperature dependence of residual stress is also discussed.