Polycrystalline films of CdTe were prepared by the hot wall-close-spaced vapor transport technique on Coming glass substrates at substrate temperatures below 450 degrees C. The thickness of the films was constant at 25 mu m for all samples grown at different substrate temperatures and different gas pressures. The film thickness was found to be a function of deposition time only (5 mu m per min), and virtually independent of substrate temperature and control gas pressure. The grain size was a monotonic function of film thickness, reaching 40 mu m for a film thickness of 50 mu m.