| 3145 - 3149 |
A comparative study of coordination in gel electrolytes -Quantitative analysis
Abbrent S, Lindgren J, Tegenfeldt J, Furneaux J, Wendsjo A |
| 3150 - 3154 |
In situ X-ray diffraction of lithium intercalation in nanostructured and thin film anatase TiO2
van de Krol R, Goossens A, Meulenkamp EA |
| 3155 - 3160 |
Development of carbon-metal oxide supercapacitors from sol-gel derived carbon-ruthenium xerogels
Lin C, Ritter JA, Popov BN |
| 3161 - 3167 |
Voltammetric and electrogravimetric study of manganese dioxide thin film electrodes II. Chemically deposited films
Ratieuville Y, Wu WL, Lincot D, Vedel J, Yu LT |
| 3168 - 3175 |
A mathematical model of an electrochemical capacitor with double-layer and faradaic processes
Lin C, Ritter JA, Popov BN, White RE |
| 3176 - 3180 |
Sol-gel-based template synthesis and Li-insertion rate performance of nanostructured vanadium pentoxide
Patrissi CJ, Martin CR |
| 3181 - 3189 |
The influence of Mn on the crystallography and electrochemistry of nonstoichiometric ABS-type hydride-forming compounds
Notten PHL, Latroche M, Percheron-Guegan A |
| 3190 - 3195 |
Optimal process for fabricating AgO cathode for AgO/Zn cells improved in high drain pulse performance at low temperatures
Takeda K, Hattori T |
| 3196 - 3202 |
Oxidation kinetics of some nickel-based superalloy foils and electronic resistance of the oxide scale formed in air Part I
England DM, Virkar AV |
| 3203 - 3210 |
Thermodynamics and kinetics of lithium intercalation into Nb2O5 electrodes for a 2 V rechargeable lithium battery
Kumagai N, Koishikawa Y, Komaba S, Koshiba N |
| 3211 - 3216 |
In situ investigations of bromine-storing complex formation in a zinc-flow battery at gold electrodes
Kautek W, Conradi A, Sahre M, Fabjan C, Drobits J, Bauer G, Schuster P |
| 3217 - 3223 |
Electrochemical cycling-induced spinel formation in high-charge-capacity orthorhombic LiMnO2
Jang YI, Huang BY, Wang HF, Sadoway DR, Chiang YM |
| 3224 - 3229 |
Thermal stability studies of Li-ion cells and components
Maleki H, Deng GP, Anani A, Howard J |
| 3230 - 3233 |
The electrochemical reversibility of the polyaniline/organodisulfide composite cathode containing an organomonothiol
Yu L, Wang XH, Li J, Jing XB, Wang FS |
| 3234 - 3237 |
Electrochemical dissolution of immobilized alpha-(FexCr1-x)(2)O-3 microparticles
Grygar T, Bezdicka P, Caspary EG |
| 3238 - 3247 |
Conduction mechanism of the anodic film on Fe-Cr alloys in sulfate solutions
Bojinov M, Fahricius G, Laitinen T, Makela K, Saario T, Sundholm G |
| 3248 - 3254 |
Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices
Kroger R, Eizenberg M, Cong D, Yoshida N, Chen LY, Ramaswami S, Carl D |
| 3255 - 3258 |
Formation of PdS compounds in direct metallization via Pd/Sn catalyst activation
Chiang YY, Wang YY, Wan CC |
| 3259 - 3263 |
Fabrication of zeolite-modified electrodes via electrophoretic deposition
Ahlers CB, Talbot JB |
| 3264 - 3269 |
Simulation of thin carbon film deposition in a radio-frequency methane plasma reactor
Bera K, Farouk B, Lee YH |
| 3270 - 3276 |
Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system
Richardson C, Takoudis CG |
| 3277 - 3284 |
A kinetic model for the metallorganic chemical vapor deposition of CdTe
Cavallotti C, Bertani V, Masi M, Carra S |
| 3285 - 3289 |
Increasing the resolution of the scanning electrochemical microscope using a chemical lens: Application to silver deposition
Borgwarth K, Heinze J |
| 3290 - 3294 |
Electrochemistry of gallium in the Lewis acidic aluminum chloride-1-methyl-3-ethylimidazolium chloride room-temperature molten salt
Chen PY, Lin YF, Sun IW |
| 3295 - 3299 |
Effects of saccharin and thiourea on sulfur inclusion and coercivity of electroplated soft magnetic CoNiFe film
Osaka T, Sawaguchi T, Mizutani F, Yokoshima T, Takai M, Okinaka Y |
| 3300 - 3308 |
Recrystallization textures of silver electrodeposits
Nam HS, Lee DN |
| 3309 - 3314 |
Nano- and macropore formation in p-type silicon
Wehrspohn RB, Ozanam F, Chazalviel JN |
| 3315 - 3323 |
Structure and morphology of electrodeposited CaCO3: X-ray diffraction and microscopy studies
Xu S, Melendres CA, Park JH, Kamrath MA |
| 3324 - 3334 |
The effect of film thickness and growth method on polyaniline film properties
Dinh HN, Vanysek P, Birss VI |
| 3335 - 3348 |
The anodic electrochemistry of pentachlorophenol
Gattrell M, MacDougall B |
| 3349 - 3356 |
Ultraslow kinetics of the ferric/ferrous electron transfer reaction on Au(110) electrode in perchloric acid solutions
Samec Z |
| 3357 - 3360 |
Electrochemical detection of C-60 in solution - Is tetrahydrofuran a suitable solvent for fullerene studies?
Paolucci F, Carano M, Ceroni P, Mottier L, Roffia S |
| 3361 - 3366 |
Non-Nernstian behavior at modified Au electrodes for hydrocarbon gas sensing
Hibino T, Kakimoto S, Sano M |
| 3367 - 3373 |
Microcavities containing individually addressable recessed microdisk and tubular nanoband electrodes
Henry CS, Fritsch I |
| 3374 - 3377 |
Light emission from Pt during high-voltage cathodic polarization
Azumi K, Mizuno T, Akimoto T, Ohmori T |
| 3378 - 3382 |
Electroactivity of polypyrrole colloids enhanced by quinone mediation
Nagaoka T, Ahmed SM, Ogura K |
| 3383 - 3388 |
Deposition of fluorinated amorphous carbon thin films as a low-dielectric-constant material
Han SS, Kim HR, Bae BS |
| 3389 - 3392 |
Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
Akermark T, Gosset LG, Ganem JJ, Trimaille I, Rigo S |
| 3393 - 3397 |
Conducting barriers for direct contact of PZT thin films on reactive substrates
Maeder T, Muralt P, Sagalowicz L, Setter N |
| 3398 - 3402 |
The influence of surface roughness on the electric conduction process in amorphous Ta2O5 thin films
Kim YS, Sung MY, Lee YH, Juh BK, Oh MH |
| 3403 - 3408 |
Assessment of thin gate oxide quality by fast turnaround soft-probe measurements
Cacciato A, Evseev S |
| 3409 - 3414 |
Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation
Afanas'ev VV, Stesmans A |
| 3415 - 3419 |
SiO2 films from tetraethoxysilane-based LPCVD: An experimental investigation of the by-prodoct-inhibited deposition mechanism
Schlote J, Bugiel E, Arndt J, Wahl G |
| 3420 - 3424 |
Parameter analysis of chemical mechanical polishing: An investigation based on the pattern planarization model
Chen DZ, Lee BS |
| 3425 - 3428 |
Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN
Jang JS, Park SJ, Seong TY |
| 3429 - 3434 |
Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics
Claeys C, Simoen E, Poyai A, Czerwinski A |
| 3435 - 3439 |
Enhancement of etching rate of SiN films by addition of gases containing hydrogen to CF4/O-2
Kataoka Y, Saito S, Omiya K |
| 3440 - 3447 |
Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition
Kal S, Ryssel H |
| 3448 - 3454 |
Chemical vapor cleaning of 6H-SiC surfaces
King SW, Kern RS, Benjamin MC, Barnak JP, Nemanich RJ, Davis RF |
| 3455 - 3460 |
Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist
Wang MY, Ko FH, Wang TK, Yang CC, Huang TY |
| 3461 - 3465 |
Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon
Ono T, Romanowski A, Asayama E, Horie H, Sueoka K, Tsuya H, Rozgonyi GA |
| 3466 - 3471 |
Grain boundary diffusion of copper in tantalum nitride thin films
Lin JC, Lee C |
| 3472 - 3475 |
Electrochemical properties for the lithium ion conductive (100-x)(0.6Li(2)S center dot 0.4SiS(2))center dot xLi(4)SiO(4) oxysulfide glasses
Hayashi A, Tatsumisago M, Minami T |
| 3476 - 3481 |
Hydrogen peroxide decomposition in ammonia solutions
Knotter DM, de Gendt S, Baeyens M, Mertens PW, Heyns HM |
| 3482 - 3484 |
Epitaxial growth and nitrogen radical doping of CdZnTe
Noda D, Aoki T, Nakanishi Y, Hatanaka Y |
| 3485 - 3488 |
Supercritical CO2 fluid for chip resistor cleaning
Wang CW, Chang RT, Lin WK, Lin RD, Liang MT, Yang JF, Wang JB |
| 3489 - 3493 |
Effect of high-temperature annealing on deep levels in thin silicon-on-insulator layers separated by implanted oxygen
Kang BK, Kang HS, Ahn CG, Kwon YK |
| 3494 - 3499 |
Minority carrier lifetime dependence on resistivity in high-purity p-type silicon
Geranzani P, Porrini M, Orizio R, Falster R |
| 3500 - 3505 |
The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors
Voutsas AT, Marmorstein AM, Solanki R |
| 3506 - 3509 |
Realization and characterization of ultrathin GaAs-on-insulator structures
Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF |
| 3510 - 3515 |
The phase identification of H2SO4-etched InP by X-ray diffraction
Liu HC, Tsai SH, Hsu JW, Shih HC |
| 3516 - 3521 |
Microstructural aspects related to carriers transport properties of nanocrystalline porous silicon films
Ciurea ML, Teodorescu VS, Nistor LC, Blanchin MG |
| 3522 - 3526 |
Dissolution kinetics for atomic, molecular, and ionic contamination from silicon wafers during aqueous processing
Suni II, Gale GW, Busnaina AA |
| 3527 - 3535 |
Analysis of the thermal oxidation of tin droplets and its implications on gas sensor stability
Dieguez A, Romano-Rodriguez A, Morante JR, Nelli P, Sangaletti L, Sberveglieri G |
| 3536 - 3537 |
Gas-sensing properties of Th/SnO2 thin-film gas sensor to trimethylamine
Wei PH, Li GB, Zhao SY, Chen LR |
