Based on the pattern planarization model, polishing time, polished thickness, and the planarization efficiency of a point of interest on a wafer during the chemical mechanical process are expressed as functions of polishing parameters. The influences as well as the variation of polishing time, polished thickness, and planarization efficiency across the wafer are also presented. Polished thickness uniformity and planarization uniformity are also presented. The effects of polishing parameters on the process are discussed and the predicted trends in adjusting these polishing parameters are illustrated.