321 - 325 |
High Charge-Density Conducting Polymer Graphite Fiber-Composite Electrodes for Battery Applications Coffey B, Madsen PV, Poehler TO, Searson PC |
326 - 332 |
Lithium Insertion in Carbons Containing Nanodispersed Silicon Wilson AM, Dahn JR |
333 - 340 |
The Electrochemical Intercalation of Li into Graphite in Li Polymer Electrolyte Graphite Cells Jiang Z, Alamgir M, Abraham KM |
340 - 347 |
XPS Analysis of Lithium Surfaces Following Immersion in Various Solvents Containing LiBF4 Kanamura K, Tomura H, Shiraishi S, Takehara ZI |
348 - 354 |
X-Ray-Absorption Studies of Mixed Salt Polymer Electrolytes Znbr2/Cabr2-Peo, Znbr2/LiBr-Peo, and Znbr2/RbBr-Peo Complexes Mcbreen J, Yang XQ, Lee HS, Okamoto Y |
354 - 360 |
Electrochemistry of Disulfide Compounds .1. Electrochemical Polymerization-Depolymerization Process of 2,5-Dimercapt-1,3,4-Thiadiazole Naoi K, Oura Y, Iwamizu Y, Oyama N |
360 - 365 |
Discharge and Charge Characteristics of Amorphous Feooh Including Aniline (A(an)-Feooh) - Influence of Preparation Conditions on Discharge and Charge Characteristics Sakaebe H, Higuchi S, Kanamura K, Fujimoto H, Takehara ZI |
366 - 370 |
Conductivity Studies on Poly(Methoxyethoxyethylmethacrylate)-Lithium Salt Complexes Selvaraj II, Chaklanobis S, Chandrasekhar V |
371 - 379 |
Structural and Kinetic Characterization of Lithium Intercalation into Carbon Anodes for Secondary Lithium Batteries Takami N, Satoh A, Hara M, Ohsaki I |
379 - 383 |
Rutherford Backscattering Studies of Polypyrrole Films .1. Effect of Electrolyte on Deposition Efficiency Wainright JS, Zorman CA |
384 - 388 |
Rutherford Backscattering Studies of Polypyrrole Films .2. Effect of Ionic Size on Mobility Wainright JS, Zorman CA |
389 - 397 |
The Mechanism of Hydrogen Oxidation at Gold and Nickel Flag Electrodes in Molten Li/K Carbonate Weewer R, Hemmes K, Dewit JH |
398 - 404 |
Anodic Polarization Behavior of Copper in Aqueous Bromide and Bromide Benzotriazole Solutions Aben T, Tromans D |
405 - 410 |
Application of Electrochemical Noise-Analysis to Study the Corrosion Behavior of Aluminum Composites Monticelli C, Zucchi F, Bonollo F, Brunoro G, Frignani A, Trabanelli G |
410 - 416 |
Growth of 2-Layer and Copolymer Polyoxyphenylene Coatings - An Electrochemical and XPS Investigation Bertoncello R, Furlanetto F, Glisenti A, Musiani MM |
417 - 422 |
Electrochemistry of Surfactant-Doped Polypyrrole Film(I) - Formation of Columnar Structure by Electropolymerization Naoi K, Oura Y, Maeda M, Nakamura S |
423 - 427 |
Rotating-Ring-Disk Electrode Study on the Fixation Mechanism of Carbon-Dioxide Aoki A, Nogami G |
428 - 432 |
Reaction-Mechanism of Electroless Metal-Deposition Using ZnO Thin-Film (I) - Process of Catalyst Formation Yoshiki H, Hashimoto K, Fujishima A |
433 - 439 |
Numerical-Simulation of the Effect of Shearing on the Concentration Profile in a Shear Cell Arnold WA, Matthiesen D |
439 - 444 |
Studies on Low-Temperature Al Electrolysis Using Composite Anodes in NaF-KCl Bath Electrolyte Balaraju JN, Ananth V, Sen U |
445 - 450 |
Kinetics of Ethanol Oxidation on Electroless Ni-P/SnO2/Ti Electrodes in KOH Solutions Lo YL, Hwang BJ |
451 - 456 |
Steady-State Characterization of the Uniform-Injection Cell .1. Theoretical-Analysis Medina JA, Schwartz DT |
457 - 462 |
Steady-State Characterization of the Uniform-Injection Cell .2. Experimental-Analysis Medina JA, Sexton DL, Schwartz DT |
463 - 468 |
New Preparation Method for Polymer-Electrolyte Fuel-Cells Uchida M, Aoyama Y, Eda N, Ohta A |
469 - 475 |
Deoxidation of Molten Steel Using a Short-Circuited Solid Oxide Electrochemical-Cell Hasham Z, Pal U, Chou KC, Worrell WL |
476 - 484 |
Investigation of Thiosulfate Adsorption on 316-Stainless-Steel in Neutral Solutions by Radioactive Labeling, Electrochemistry, and Auger-Electron Spectroscopy Thomas AE, Sung YE, Gamboaaldeco M, Franaszczuk K, Wieckowski A |
485 - 491 |
Physical Characterization of Pb1Zr0.2Ti0.8O3 Prepared by the Sol-Gel Process Bozack MJ, Williams JR, Ferraro JM, Feng ZC, Jones RE |
491 - 496 |
Immittance Response of La0.6Sr0.4Co0.2Fe0.8O3 Based Electrochemical-Cells Chen CC, Nasrallah MM, Anderson HU |
497 - 505 |
Palladium-Modified Aluminide Coatings - Mechanisms of Formation Lamesle P, Steinmetz P, Steinmetz J, Alperine S |
506 - 513 |
Electrocatalysis in Solid Oxide Fuel-Cell Electrode Domains Thampi KR, Mcevoy AJ, Vanherle J |
513 - 518 |
Oxygen-Ion Diffusion in the 80-K Phase Bipbsrcacuo Superconductor Zhu W, Nicholson PS |
519 - 524 |
Selective Metallization of Silicon Surfaces - The Adsorption of Sterically Stabilized Palladium Particles on H-Terminated Si(100), Si3N4, and SiO2 Boonekamp EP, Kelly JJ, Fokkink LG, Vandenhoudt DW |
525 - 531 |
Al2O3 Films Formed by Anodic-Oxidation of Al-1 Weight Percent Si-0.5 Weight Percent Cu Films Chiu RL, Chang PH, Tung CH |
532 - 537 |
Characteristics of Boron-Diffusion in Polysilicon Silicon Systems with a Thin Si-B Layer as Diffusion Source Chen TP, Lei TF, Lin HC, Chang CY |
538 - 547 |
Analysis and Modeling of in-Situ Boron-Doped Polysilicon Deposition by LPCVD Fresquet G, Azzaro C, Couderc JP |
547 - 553 |
On the Anisotropically Etched Bonding Interface of Directly Bonded (100) Silicon-Wafer Pairs Ju BK, Lee YH, Tchah KH, Oh MH |
553 - 559 |
The Effect of the Thermal History of Czochralski Silicon-Crystals on the Defect Generation and Refresh Time Degradation in High-Density Memory Devices Kim SS, Wijaranakula W |
560 - 564 |
On the Origin of Internal Gettering Suppression in Low-Carbon Cz Silicon by Rapid Thermal Annealing Maddalonvinante C, Vallard JP, Barbier D |
565 - 571 |
Influence of H-2 Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar Nordell N, Nishino S, Yang JW, Jacob C, Pirouz P |
571 - 576 |
The Cleaning Effects of HF-HNO3-H2O2 System Park TH, Ko YS, Shim TE, Lee JG, Kim YK |
576 - 580 |
Doping Profile Analysis in Si by Electrochemical Capacitance-Voltage Measurements Peiner E, Schlachetzki A, Kruger D |
580 - 585 |
Moisture Resistance of Plasma-Enhanced Chemical-Vapor-Deposited Oxides Used for Ultralarge Scale Integrated Device Applications Robles S, Yieh E, Nguyen BC |
586 - 590 |
The Transient Nature of Excess Low-Level Leakage Currents in Thin Oxides Scott RS, Dumin DJ |
590 - 593 |
Electrical-Conductivity of Ion-Implanted Polyimide Svorcik V, Rybka V, Stibor I, Hnatowicz V |
593 - 596 |
The Effect of the Native-Oxide on Musk Undercutting of V-Grooves Etched into (100) InP Surfaces Using an Sinx Mask Wang J, Thompson DA, Simmons JG, Boumerzoug M, Boudreau M, Mascher P |
596 - 600 |
The Reliability Evaluation of Thin Silicon Dioxide Using the Stepped Current Tddb Technique Yoneda K, Okuma K, Hagiwara K, Todokoro Y |
601 - 605 |
Effects of Natural-Convection on Envelope Temperature and Tungsten Transport in a 100-W Filament Lamp Chang PY |
606 - 609 |
Annealing of Reactive Ion Etching Plasma-Exposed Thin Oxides Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD |
609 - 614 |
Reactions Between Liquid Silicon and Different Refractory Materials Deike R, Schwerdtfeger K |
615 - 620 |
An Extended Quantum Model for Porous Silicon Formation Frohnhoff S, Marso M, Berger MG, Thonissen M, Luth H, Munder H |
621 - 627 |
Behavior of Polyethylene Oxide-Based Nonionic Surfactants in Silicon Processing Using Alkaline-Solutions Jeon JS, Raghavan S, Sperline RP |
628 - 633 |
Combining Patterned Self-Assembled Monolayers of Alkanethiolates on Gold with Anisotropic Etching of Silicon to Generate Controlled Surface Morphologies Kim E, Kumar A, Whitesides GM |
634 - 641 |
Nucleation and Void Formation Mechanisms in SiC Thin-Film Growth on Si by Carbonization Li JP, Steckl AJ |
641 - 644 |
A Model of Effects of Surface Pretreatment by Organic-Solvents on Ozone-Tetraethoxysilane Chemical-Vapor-Deposition Nakano T, Sato N, Ohta T |
645 - 649 |
Traps in Reoxidized Nitrided Oxides of Varying Thicknesses Natarajan R, Dumin DJ |
650 - 655 |
Flat-Band Potential Studies at the N-Si/Electrolyte Interface by Electroreflectance and C-V Measurements Roppischer H, Bumai YA, Feldmann B |
655 - 660 |
Arsenic Pileup at the SiO2/Si Interface Sato Y, Nakata J, Imai K, Arai E |
660 - 663 |
Pileup of N-Type Dopant in SOI Structure and Its Effect on N-Well Concentration Sato Y, Imai K, Arai E |
664 - 668 |
Deep Subhalf-Micron Contact Filling Technology Using Control Etching and Collimated Ti Sputtering Techniques Sekine M, Ito N, Shinmura T, Yamada Y, Kikkawa T, Murao Y, Huo DT |
669 - 671 |
Sulfur-Hexafluoride Reactive Ion Etching of (111) Beta-SiC Epitaxial Layers, Grown on (111) TiC Substrates Wu J, Parsons JD, Evans DR |
671 - 676 |
Deposition of Copper from a Buffered Oxide Etchant Onto Silicon-Wafers Yoneshige KK, Parks HG, Raghavan S, Hiskey JB, Resnick PJ |
676 - 682 |
Low-Pressure Chemical-Vapor-Deposition of Silicon Dioxide Films by Thermal-Decomposition of Tetra-Alkoxysilanes Kim EJ, Gill WN |
L23 - L25 |
Etching High-Aspect-Ratio (110) Silicon Grooves in Csoh Yao SM, Hesketh PJ, Macrander AT |
L25 - L28 |
Screening of Charged Electrodes in Aqueous-Electrolytes Philpott MR, Glosli JN |
L28 - L30 |
Kinetics of Salicide Contact Formation for Thin-Film SOI Transistors Mendicino MA, Seebauer EG |