We have developed a novel technology for a 0.4 mu m contact with lower contact resistance using blanket W-CVD as the interconnect material. Collimated Ti sputtering followed by rapid thermal nitridation (RTN) was applied as the barrier layer for blanket W-CVD. We also developed a special chemical dry etching technique to remove the damaged Si layer caused by window etching. This damaged layer can degrade the reaction at the Ti/Si interface and causes a higher contact resistance. A mechanism is proposed to explain the contact degradation. Combined with collimated sputtering low contact resistance for 0.4 mu m p(+) Si contact with an aspect ratio of four was achieved and a resistivity of 1.3 x 10(-1) Ohm-cm(2) was realized. This novel technology can be readily used to manufacture 0.25 micron ULSI devices such as 256 Mbit DRAM.