A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped-up stress current density is proposed, and the effectiveness of this technique is demonstrated. The stepped current time-dependent dielectric breakdown (SCTDDB) measurement starts at a very low stress current density (10(-5) A/cm(2)), and it steps up logarithmically to a maximum stress current density (1.0 A/cm(2)) until oxide breakdown occurs. The SCTDDB measurement has high detection sensitivity for defect-related breakdown, a wide dynamic range (10(-5) to 10(2) C/cm(2)), adequate measurement time (within 60 s/chip), and data compatibility with conventional constant current TDDB result. The SCTDDB technique is a very simple and powerful evaluation tool for thin silicon dioxide reliability analysis.