Effects of surface treatment with various kinds of organic solvents prior to forming an SiO2 film by atmospheric pressure chemical vapor deposition using ozone and tetraethoxysilane were investigated. The deposition rate was reduced by the treatment regardless of the kind of the organic solvents. Analyses of adsorbed chemical substances on the silicon surface demonstrated that chemical adsorption of solvent molecules on the surface occurred. With respect to the decrease of the deposition rate, it is concluded that the adsorption of the molecules reduces the adsorptive activity of the sites distributed on the surface, causing a decrease of sticking probability of vapor-phase species responsible for the deposition.