Applied Surface Science

Applied Surface Science, Vol.254, No.19 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (69 articles)

6009 - 6009	Fifth international symposium on control of semiconductor interfaces -ISCSI-V - Preface Yasuda Y, Okumura T
6013 - 6016	Base doping and dopant profile control of SiGe npn and pnp HBTs Tillack B, Heinemann B, Knoll D, Rucker H, Yamamoto Y
6017 - 6020	Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGeHBTs Oda K, Miura M, Shimamoto H, Washio K
6021 - 6024	Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(100) Akiyama N, Sakuraba M, Tillack B, Murota J
6025 - 6029	New fabrication of a strained Si/Si1-yGey dual channel on a relaxed Si1-xGex virtual substrate using a Ge-rich layer formed by oxidation Kim SH, Bae HC, Lee SH
6030 - 6033	Growth and modification of thin a-Si : H/a-Ge : H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing Chiussi S, Gontad F, Rodriguez R, Serra C, Serra J, Leon B, Sulima T, Hollt L, Eisele I
6034 - 6036	Low-temperature oxidation of SiGe by liquid-phase deposition Chen YH, Kung CY, Hwang JD, Lin HY, Chan HJ, Chen PS
6037 - 6039	Selective vapor phase etching of SiGe by HCl in a RPCVD reactor Yamamoto Y, Kopke K, Kurps R, Tillack B
6040 - 6047	Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer Mendez SO, Le Thanh V, Ranguis A, Derrien J
6048 - 6051	Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates Yamazaki M, Takeuchi S, Nakatsuka O, Sakai A, Ogawa M, Zaima S
6052 - 6054	Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate Saito M, Mori M, Maezawa K
6055 - 6058	Structural characterization of SiGe nanoclusters formed by rapid thermal annealing dos Anjos AMP, Doi I, Diniz JA
6059 - 6062	Phosphorous doped Ru film for advanced Cu diffusion barriers Perng DC, Yeh JB, Hsu KC
6063 - 6066	Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma Manera LT, Zoccal LB, Diniz JA, Tatsch PJ, Doi I
6067 - 6071	45 nm CMOS technology with low temperature selective epitaxy of SiGe Tamura N, Shimamune Y
6072 - 6075	Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate Nguyen ND, Loo R, Caymax M
6076 - 6080	Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing Chen PS, Lee SW, Lee MH, Liu CW
6081 - 6085	Low temperature selective epitaxial growth of SiGe layers using various dielectric mask patterns and process conditions Choi AR, Choi SS, Kim JT, Cho DH, Han TH, Shim KH
6086 - 6089	Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition Tanno H, Sakuraba M, Tillack B, Murota J
6090 - 6093	Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system Yokogawa T, Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H
6094 - 6099	Interface control of high-k gate dielectrics on Ge Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A, Van Elshocht S
6100 - 6105	Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization Kita K, Takahashi T, Nomura H, Suzuki S, Nishimura T, Toriumi A
6106 - 6108	Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS Kakushima K, Okamoto K, Adachi M, Tachi K, Song J, Sato S, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H
6109 - 6111	Control of electronic properties of HfO2 with fluorine doping from first-principles Schimizu T, Koyama M
6112 - 6115	Interface characterization and current conduction in HfO2-gated MOS capacitors Chen HW, Chiu FC, Liu CH, Chen SY, Huang HS, Juan PC, Hwang L
6116 - 6118	The effects of plasma treatment on the thermal stability of HfO2 thin films Chang KM, Chen BN, Huang SM
6119 - 6122	Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method Arimura H, Horie S, Oku Y, Minami T, Kitano N, Kosuda M, Hosoi T, Shimura T, Watanabe H
6123 - 6126	Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks Mizubayashi W, Akiyama K, Wang W, Ikeda M, Iwamoto K, Kamimuta Y, Hirano A, Ota H, Nabatame T, Toriumi A
6127 - 6130	Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs Chen HW, Chen SY, Chen KC, Huang HS, Liu CH, Chiu FC, Liu KW, Lin KC, Cheng LW, Lin CT, Ma GH, Sun SW
6131 - 6134	Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering - On growth delay time at initial growth stage Zhou Y, Kojima N, Sugiyama H, Ohara K, Sasaki K
6135 - 6139	Source/drain engineering for MOSFETs with embedded-Si : C technology Itokawa H, Yasutake N, Kusunoki N, Okamoto S, Aoki N, Mizushima I
6140 - 6143	Leakage current study of Si1-xCx embedded source/drain junctions Simoen E, Vissouvanadin B, Taleb N, Gonzalez MB, Verheyen P, Loo R, Claeys C, Machkaoutsan V, Bauer M, Thomas S, Lu JP, Wise R
6144 - 6146	Short channel effect improved strained-Si : C-source/drain PMOSFETs Lee MH, Chang ST, Maikap S, Shen KW, Wang WC
6147 - 6150	Strained-Si with carbon incorporation for MOSFET source/drain engineering Lee MH, Chang ST, Lee SW, Chen PS, Shen KW, Wang WC
6151 - 6154	Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method Chang KM, Lin JH, Sun CY
6155 - 6157	Characterization of the low temperature activated N+/P junction formed by implant into silicide method Chang KM, Lin JH, Yang CH
6158 - 6161	Current topics of silicon germanium devices Kasper E
6162 - 6164	C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures Onojima N, Kasamatsu A, Hirose N, Mimura T, Matsui T
6165 - 6167	Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth Terashima K, Tanabe A, Nakagawa T, Mori K, Ikarashi T, Nakatsuru J, Date H, Ikemoto M, Tatsumi T
6168 - 6173	Silicon-on-Nothing MOSFETs: An efficient solution for parasitic substrate coupling suppression in SOI devices Kilchytska V, Flandre D, Raskin JP
6174 - 6176	New physical model to explain logarithmic time dependence of data retention in flash EEPROM Kamohara S, Okumura T
6177 - 6181	Exploring the effect of width on performance enhancement in NMOSFETs with a silicon-carbon alloy stressor and a tensile stress silicon nitride liner Chang ST, Wang WC, Huang J, Liao SH, Lin CY
6182 - 6185	Reduced self-heating by strained silicon substrate engineering O'Neill A, Agaiby R, Olsen S, Yang Y, Hellstrom PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E
6186 - 6189	The switch of the worst case on NBTI and hot-carrier reliability for 0.13 mu m pMOSFETs Tu CH, Chen SY, Lin MH, Wang MC, Wu SH, Chou S, Ko J, Huang HS
6190 - 6193	Comparative study of low frequency noise and hot-carrier reliability in SiGePD SOI pMOSFETs Choi SS, Choi AR, Yang JW, Hwang YW, Cho DH, Shim KH
6194 - 6198	Ballistic/quasi-ballistic transport in nanoscale transistor Natori K
6199 - 6202	Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices Takada Y, Muraguchi M, Shiraishi K
6203 - 6207	Theoretical study of electron mobility for silicon-carbon alloys Chang ST, Lin CY, Liao SH
6208 - 6210	Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure Matsumoto M, Inayoshi Y, Suemitsu M, Miyamoto E, Yara T, Nakajima S, Uehara T, Toyoshima Y
6211 - 6214	Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate Cheng SL, Chen HY, Lee SW
6215 - 6217	Low temperature formation of multi-layered structures of ferromagnetic silicide Fe3Si and Ge Ueda K, Ando Y, Kumano M, Sadoh T, Maeda Y, Miyao M
6218 - 6221	Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si Shindo D, Yoshimura T, Fujimura N
6222 - 6225	Leakage current and paramagnetic defects in SiCN dielectrics for copper diffusion barriers Kobayashi K, Yokoyama H, Endoh M
6226 - 6228	Influences of Si pillar geometry on SiN-stressor induced local strain Tanaka M, Sadoh T, Morioka J, Kitamura T, Miyao M
6229 - 6231	Evaluation of Si3N4/Si interface by UV Raman spectroscopy Ogura A, Yoshida T, Kosemura D, Kakemura Y, Aratani T, Higuchi M, Sugawa S, Teramoto A, Ohmi T, Hattori T
6232 - 6234	SR-PES and STM observation of metastable chemisorption state of oxygen on Si(110)-16 x 2 surface Yamamoto Y, Togashi H, Kato A, Takahashi Y, Konno A, Teraoka Y, Yoshigoe A, Asaoka H, Suemitsu M
6235 - 6237	"Temperature oscillation'' as a real-time monitoring of the growth of 3C-SiC on Si substrate Saito E, Konno A, Ito T, Yasui K, Nakazawa H, Endoh T, Narita Y, Suemitsu M
6238 - 6241	MBE growth of SiGe with high Ge content for optical applications Oehme M, Werner J, Kirfel O, Kasper E
6242 - 6247	Luminescence properties of beta-FeSi2 and its application to photonics Maeda Y
6248 - 6251	Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films Sakamoto S, Oshio T, Ashida A, Yoshimura T, Fujimura N
6252 - 6256	Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics Ono Y, Khalafalla MAH, Nishiguchi K, Takashina K, Fujiwara A, Horiguchi S, Inokawa H, Takahashi Y
6257 - 6260	Carrier gas effects on the SiGe quantum dots formation Lee CH, Yu CY, Lin CM, Liu CW, Lin H, Chang WH
6261 - 6264	Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition Lee SW, Chen PS, Cheng SL, Lee MH, Chang HT, Lee CH, Liu CW
6265 - 6267	Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1-xGex/Si(100) heterostructure Seo T, Sakuraba M, Murota J
6268 - 6272	Metal-diamond semiconductor interface and photodiode application Koide Y
6273 - 6276	Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond Teraji T, Koizumi S, Koide Y, Ito T
6277 - 6280	Characterization of soft-X-ray detectors fabricated with high-quality CVD diamond thin films Iwakaji Y, Kanasugi M, Maida O, Takeda Y, Saitoh Y, Ito T
6281 - 6284	Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber Nakai T, Maida O, Ito T
6285 - 6288	Clarification of band structure at metal-diamond contact using device simulation Masuzawa T, Shiraki Y, Kudo Y, Saito I, Yamaguchi H, Yamada T, Okano K