Low-temperature ( <300 degrees C) molecular beam epitaxy of Fe3Si/Ge was investigated. By optimizing growth conditions, Fe3Si layers with a. at interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe3Si/Ge on high quality Fe3Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe3Si and Ge layers were epitaxially grown on Fe3Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe3Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe3Si/Ge](2) multi-layered structures. (C) 2008 Elsevier B.V. All rights reserved.