Thin Solid Films

Thin Solid Films, Vol.343-344 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (165 articles)

1 - 4	Modelling thin film growth: Monte-Carlo models of fullerite films Smith R, Richter A
5 - 8	Columnar growth structure and evolution of wavy interface morphology in amorphous multilayered thin films Czigany Z, Radnoczi G
9 - 12	Evolution of crystals during vacuum deposition Bochkarev AA, Poliakova VI, Pukhovoy MV
13 - 16	Reactive co-evaporation of Si and Ge in oxygen atmospheres Sangrador J, Clement M, Iborra E
17 - 20	Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films Tsuji H, Nakamura S, Gotoh Y, Ishikawa J
21 - 23	Preparation of MgxNi thin films by RF-DC coupled magnetron sputtering Suzuki M, Tanaka T, Kawabata K
24 - 26	A hybrid simulation of high pressure sputtering, combining the Monte Carlo method and the diffusive approach Nakano T, Baba S
27 - 30	Tunneling spectrum characteristic reflecting discrete energy levels in Pb(Tl)Te Films Murakami H, Aoki R, Sakai K
31 - 34	Bayesian error analysis of Rutherford backscattering spectra Barradas NP, Jeynes C, Jenkin M, Marriott PK
35 - 38	Non-destructive chemical analysis of sandwich structures by means of soft X-ray emission Galnander B, Kaambre T, Blomquist P, Nilsson E, Guo J, Rubensson JE, Nordgren J
39 - 42	The control of film stress using ionised magnetron sputter deposition Chiu KF, Barber ZH, Somekh RE
43 - 46	The influence of silver on the structure and mechanical properties of (TiAl)-based intermetallics Vieira MT, Trindade B, Ramos AS, Fernandes JV, Vieira MF
47 - 50	Magnetron sputtering of alloy and alloy-based films Musil J, Vlcek J
51 - 56	The oxidation behaviour of mixed tungsten silicon sputtered coatings Louro C, Cavaleiro A
57 - 59	Effect of DC bias on the deposition rate using RF-DC coupled magnetron sputtering for Mg thin films Tanaka T, Suzuki M, Kawabata K
60 - 62	Formation of pure thin films by means of self-sputtering deposition Horino Y, Chayahara A, Tsubouchi N, Heck C, Kinomura A, Abiko K
63 - 66	MgO thin film deposition using TVA (thermoionic vacuum arc) Ehrich H, Musa G, Popescu A, Mustata I, Salabas A, Cretu M, Leu GF
67 - 70	Effect of surface roughness on magnetic properties of Fe films deposited by dual ion beam sputtering Iwatsubo S, Takahashi T, Naoe M
71 - 74	An estimation of optimum Ar ion bombardment energy for good Fe films applying thermal spike effect Iwatsubo S, Takahashi T, Naoe M
75 - 80	The influence of ion bombardment intensity during deposition on nickel films microstructure Popovic N, Bogdanov Z, Goncic B, Zec S, Rakocevic Z
81 - 84	Energetic oxygen particles in the reactive sputtering of Zn targets in Ar/O-2 atmospheres Tominaga K, Murayama T, Sato Y, Mori I
85 - 89	Pulsed magnetron sputtering of reactive compounds Posadowski WM
90 - 93	Reactive pulsed laser deposition of piezoelectric and ferroelectric thin films Craciun F, Verardi P, Dinescu M, Guidarelli G
94 - 97	Poole-Frenkel conductivity prior to electroforming in evaporated Au-SiOx-Au sandwich structures Gould RD, Lopez MG
98 - 100	Epitaxial growth and transport properties of a-axis oriented Hg-cuprate thin films Yun SH, Karlsson UO
101 - 104	Reduction of thin oxide layer on Fe60Ni40 substrates in hydrogen plasmas Mozetic M, Zalar A, Drobnic M
105 - 107	Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N-2, O-2 and N2O Choi WK, Tan LS, Lim JY, Pek SG
108 - 110	Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films Choi WK, Han KK, Chim WK
111 - 114	Halide chemical vapour deposition of Ta2O5 Forsgren K, Harsta A
115 - 118	The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant Safi I, Howson RP
119 - 122	Palladium silicide oxide formations in Pd/SiO2 complex films Ichinohe T, Masaki S, Kawasaki K, Morisaki H
123 - 126	Annealing effects of CuInSe2 films prepared by pulsed laser deposition Kuranouchi S, Yoshida A
127 - 129	Epitaxial growth of nitride semiconductor films by laser ablation Yoshida A, Ouyang K, Chang BS, Wakahara A
130 - 133	Transparent conductive ZnO : Al films by reactive co-sputtering from separate metallic Zn and Al targets Fenske F, Fuhs W, Nebauer E, Schopke A, Selle B, Sieber I
134 - 137	Characterization of mechanical properties of VO2 thin films on sapphire and silicon by ultra-microindentation Jin P, Nakao S, Tanemura S, Bell T, Wielunski LS, Swain MV
138 - 141	An effect of preheat-treatment on the formation of titanium-oxide films by sintering a titanium/silicon-oxide structure in an oxygen atmosphere Yokota K, Yamada T, Sasagawa T, Nakamura K, Miyashita F
142 - 144	Transparent conductive tin oxide films by photochemical vapour deposition Tamura S, Ishida T, Magara H, Mihara T, Tabata O, Tatsuta T
145 - 147	Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone Haga K, Katahira F, Watanabe H
148 - 151	Investigation of SiO2 deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane Horii NM, Okimura K, Shibata A
152 - 155	Reactively sputtered TiO2-x thin films with plasma-emission-controlled departure from stoichiometry Zakrzewska K, Brudnik A, Radecka M, Posadowski W
156 - 159	Novel methods for preparation of ion-exchangeable thin films Abe R, Ikeda S, Kondo JN, Hara M, Domen K
160 - 163	Properties of films of multilayered ZnO : Al and ZnO deposited by an alternating sputtering method Tominaga K, Murayama T, Umezu N, Mori I, Ushiro T, Moriga T, Nakabayashi I
164 - 167	Abnormal residual stress state in ZnO films synthesized by planar magnetron sputtering system with two facing targets Hanabusa T, Hosoda H, Kusaka K, Tominaga K
168 - 170	Vanadium oxide thin films deposited onto Cu buffer layer by RF magnetron sputtering Miyazaki H, Kamei M, Yasui I
171 - 174	Ordering of PVBA on amorphous SiO2 and Pd(110) Muller B, Cai CZ, Bosch M, Jager M, Bosshard C, Gunter P, Barth JV, Weckesser J, Kern K
175 - 178	Optical and electrical properties of embedded silver nanoparticles at low temperatures Heilmann A, Kiesow A, Gruner M, Kreibig U
179 - 182	Deep profiles of lithium in electrolytic structures of ITO/WO3 for electrochromic applications Porqueras I, Viera G, Marti J, Bertran E
183 - 186	Study of electrochromic cells incorporating WO3, MoO3, WO3-MoO3 and V2O5 coatings Papaefthimiou S, Leftheriotis G, Yianoulis P
187 - 190	Ellipsometric studies on thin silver films epitaxially grown on Si(111) Masten A, Wissmann P
191 - 194	Luminescence from hydrogenated amorphous silicon treated in microwave hydrogen plasma, KOH solution, and oxygen atmosphere Yokota K, Kitagawa T, Yamamoto D, Nakamura K, Miyashita F
195 - 198	Preparation and optical transmittance of titanium hydride (deuteride) films by rf reactive sputtering Nakao S, Saitoh K, Hirahara T, Ikeyama M, Tazawa M, Jin P, Niwa H, Tanemura S, Miyagawa Y, Miyagawa S, Yasuda K
199 - 201	Preparation of CuIn(SxSe1-x)(2) thin films by excimer laser ablation from binary compounds Yamamoto Y, Yamaguchi T, Yoshida A
202 - 205	Effect of a CdS interlayer in thermochromism and photochromism of MoO3 thin films Quevedo-Lopez MA, Ramirez-Bon R, Orozco-Teran RA, Mendoza-Gonzalez O, Zelaya-Angel O
206 - 209	Intermixing in immiscible Co/Ag/Co trilayers under XeCl laser annealing D'Anna E, Leggieri G, Luches A, Martino M, Majni G, Barucca G, Mengucci P, Luby S, Majkova E, Jergel M
210 - 213	Scaling behaviour and evolution of ferromagnetism in epitaxial Fe/GaAs(100) and Fe/InAs(100) Freeland DJ, Xu YB, Kernohan ETM, Tselepi M, Bland JAC
214 - 217	Formation of granular-like structure of Ag Co multilayers by excimer laser irradiation Majkova E, Spasova M, Jergel M, Luby S, Okayasu S, Luches A, Martino M, Zubarev EN, Brunel M
218 - 221	Magnetoresistive properties and microstructure of NiFe thin films and NiFe(t)/Cu(s)/NiFe(t) multilayer films Neamtu J, Volmer M, Coraci A
222 - 225	Hard a-C : H films deposited at high deposition rates Marques FC, Lacerda RG, de Lima MM, Vilcarromero J
226 - 229	Influence of diamond crystal orientation on their tribological behaviour under various environments Schmitt M, Paulmier D, Le Huu T
230 - 233	Effect of partial pressure on the internal stress and the crystallographic structure of r.f. reactive sputtered Ti-N films Inoue S, Ohba T, Takata H, Koterazawa K
234 - 237	New Cr-B hard coatings by r.f.-plasma assisted magnetron sputtering method Zhou M, Nose M, Makino Y, Nogi K
238 - 241	Nanohardness and chemical bonding of boron nitride films Jankowski AF
242 - 245	Deposition and characterisation of TiAlBN coatings produced by direct electron-beam evaporation of Ti and Ti-Al-B-N material from a twin crucible source Rebholz C, Leyland A, Matthews A
246 - 249	Resistivity and structural defects of reactively sputtered TiN and HfN films Ando Y, Sakamoto I, Suzuki I, Maruno S
250 - 253	Deposition of boron carbon nitride films by dual cathode magnetron sputtering Kusano Y, Evetts JE, Hutchings IM
254 - 256	Titanium carbide film deposition by DC magnetron reactive sputtering using a solid carbon source Kusano E, Satoh A, Kitagawa M, Nanto H, Kinbara A
257 - 260	Residual stress in TiN film deposited by arc ion plating Matsue T, Hanabusa T, Miki Y, Kusaka K, Maitani E
261 - 264	Adhesive characteristics of Fe films deposited by ion beam sputtering with Ar ion bombardment Iwatsubo S, Takahashi T, Naoe M
265 - 268	The determination of nitrogen in Cr-N system by RBS and the weight gain technique Panjan P, Navinsek B, Zorko B, Zalar A
269 - 272	TEA CO2 laser-induced damage of low-thickness TiN coatings Gakovic BM, Trtica MS, Nenadovic TM, Obradovic BJ
273 - 276	Structure and adhesive properties of TiN films reactively deposited by plasma-free sputtering Takahashi T, Masugata K, Iwatsubo S, Asada M
277 - 280	The metastability of porous silicon crystalline silicon structure Pincik E, Bartos P, Jergel M, Falcony C, Bartos J, Kucera M, Kakos J
281 - 284	In situ ellipsometric studies of the a-Si : H growth using an expanding thermal plasma Smets AHM, de Sanden MCM, Schram DC
285 - 287	Boron-induced electronic states in hydrogenated amorphous silicon Lin SY
288 - 291	Enhancement of crystallization of Si films on quartz substrates by electric fields Horita S, Inagaki D, Sato K
292 - 294	Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD Toal SJ, Reehal HS, Webb SJ, Barradas NP, Jeynes C
295 - 298	Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry Franta D, Ohlidal I, Munzar D, Hora J, Navratil K, Manfredotti C, Fizzotti F, Vittone E
299 - 301	LPCVD deposition of silicon nitride assisted by high density plasmas Zambom LS, Mansano RD, Furlan R, Verdonck P
302 - 304	Effect of In-content on the misfit dislocation interaction in InGaAs GaAs layers Gonzalez D, Aragon G, Araujo D, Garcia R
305 - 308	Electron microscopy study of SiC obtained by the carbonization of Si(111) Pacheco FJ, Sanchez AM, Molina SI, Araujo D, Devrajan J, Steckl AJ, Garcia R
309 - 312	Molecular arrangement of organic crystal N,N '-dimethylperylene-3,4,9,10-bis(dicarboximide) studied with metastable de-excitation spectroscopy and atomic force microscopy Mochizuki K, Hongo S, Urano T, Ni JP, Ueda Y
313 - 316	A new type of CO2 sensor built up with plasma polymerized polyaniline thin film Takeda S
317 - 319	Effects of reduced growth temperature on crystalline qualities and dopant diffusion in Pb1-xSnxSe/PbSe layers grown by MBE Suzuki M, Seki T
320 - 323	Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se Tanaka T, Yamaguchi T, Wakahara A, Yoshida A
324 - 327	Structure of alumina oxide coatings deposited by impulse plasma method Zdunek K, Mizera J, Wiencek P, Gebicki W, Mozdzonek M
328 - 331	X-ray photoemission and photoreflectance study of Au ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces Pincik E, Ivanco J, Kucera M, Almeida J, Jergel M, Krempasky M, Margaritondo G, Brunel M
332 - 334	ZnS wide band gap semiconductor thin film electronic structure sensitivity to Mn impurity Vdovenkova T, Vdovenkov A, Tornqvist R
335 - 337	Composition and properties of thin solid films on porous silicon surface Monastyrskii L, Lesiv T, Olenych I
338 - 341	Deposition and properties of plasma polymer films made from thiophenes Kiesow A, Heilmann A
342 - 344	Preparation and properties of boron thin films Kamimura K, Nagaoka T, Shinomiya T, Nakao M, Onuma Y, Makimura M
345 - 349	Blue light emitting laser diodes Nakamura S
350 - 353	First principle study of hydrogen passivated Si(100) initial state of oxidation Esteve A, Rouhani MD, Esteve D
354 - 360	In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy Hori T, Sakamoto H, Takakuwa Y, Enta Y, Kato H, Miyamoto N
361 - 364	Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozone Nakamura K, Kurokawa A, Ichimura S
365 - 369	Lattice strain in oxidized Si nanostructure arrays from X-ray measurements Tanaka S, Umbach CC, Shen Q, Blakely JM
370 - 373	Modeling of SiO2/Si(100) interface structure by using extended -Stillinger-Weber potential Watanabe T, Ohdomari I
374 - 377	Extremely smooth surface morphologies in N-2/H-2/CH4 based low energy chemically assisted ion beam etching of InP GaInAsP Carlstrom CF, Anand S, Landgren G
378 - 380	Anisotropic inductively coupled plasma etching of silicon with pure SF6 Mansano RD, Verdonck P, Maciel HS, Massi M
381 - 384	Effects of plasma etching on DLC films Massi M, Mansano RD, Maciel HS, Otani C, Verdonck P, Nishioka LNBM
385 - 388	Spectroscopic ellipsometry characterization of strained interface region in thermally oxidized Si(111) Szekeres A, Paneva A, Alexandrova S
389 - 392	Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfaces Alexandrova S, Szekeres A
393 - 396	Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy Ying WB, Mizokawa Y, Tanahashi K, Kamiura Y, Iida M, Kawamoto K, Yang WY
397 - 400	Interaction of H2O clusters with hydrogen-terminated and clean Si(001) surfaces Akagi K, Tsukada M
401 - 403	Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons Nohira H, Takahashi K, Hattori T
404 - 407	Hydrogen adsorption and desorption on SiGe investigated by in situ surface infrared spectroscopy Hirose F, Sakamoto H, Terashi M, Kuge J, Niwano M
408 - 411	Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELS Ikeda H, Nakagawa Y, Sato K, Higashi M, Zaima S, Yasuda Y
412 - 415	On the kinetics of generation of point defects in the Si-SiO2 system Kropman D, Abru U, Samoson A, Karner T
416 - 419	Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys Mamor M, Auret FD, Goodman SA, Malherbe JB
420 - 422	Radiation enhanced growth rates during plasma oxidation of silicon Buiu O, Taylor S
423 - 426	REM studies of the roughening transitions of Si high index surfaces Suzuki T, Minoda H, Tanishiro Y, Yagi K
427 - 432	Real-time diagnostics of growth of silicon-germanium alloys on hydrogen-terminated and oxidized silicon (111) surfaces by spectroscopic ellipsometry Hess P, Opahle I
433 - 436	Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing Martinez FL, Martil I, Gonzalez-Diaz G, Bernal-Oliva AM, Gonzalez-Leal JM, Marquez E
437 - 440	Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature del Prado A, Martil I, Fernandez M, Gonzalez-Diaz G
441 - 444	Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films Han LJ, Ong TY, Prakash S, Chua LG, Choi WK, Tan LS, Loh FC, Tan KL
445 - 448	Hydrogen in amorphous germanium-carbon Vilcarromero J, Marques FC
449 - 452	Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications Porqueras I, Marti J, Bertran E
453 - 456	Effect of deposition conditions of buffer layer on the characteristics of (Ba,Sr)TiO3 thin films fabricated by a self-buffering process Kil DS, Lee BI, Joo SK
457 - 460	Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane Fujii T, Hiramatsu M, Nawata M
461 - 464	Relationship of grain nanostructure and orientation in whisker growth on aluminum thin films on glass substrates Takatsuija H, Tsujimoto K, Kuroda K, Saka H
465 - 468	The influence of cooling water flowing in the sputtering target on aluminum based thin film nanostructure deposited on glass substrates Takatsuji H, Tsuji S, Kuroda K, Saka H
469 - 475	Electrical properties of polymer Si heterojunctions Musa I, Eccleston W
476 - 480	Excitation energy dependence of luminescent sol-gel organically modified silicates Ferreira RAS, Carlos LD, Bermudez VD
481 - 483	Plasmon loss features of germanium nanocrystals fabricated by the cluster beam evaporation technique Sato S, Nozaki S, Morisaki H
484 - 487	Photoinduced changes of the structure and index of refraction of amorphous As-S films Polak Z, Frumari M, Frumarova B
488 - 491	Thermally and photoinduced changes of structure and optical properties of As-Ga-S amorphous films and glasses Frumar M, Jedelsky J, Polak Z, Cernosek Z
492 - 494	Kelvin probe study of metastable states during initial oxygen adsorption dynamics on Si(111) 7 x 7 Petermann U, Baikie ID, Lagel B
495 - 499	Recent understandings of elementary growth processes in MBE of GaAs Nishinaga T, Yamashiki A
500 - 503	Optimizing GaSb(111) and GaSb(001) surfaces for epitaxial film growth Solomon JS, Petry L, Tomich DH
504 - 507	Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources Nishio M, Enoki T, Mitsuishi Y, Guo QX, Ogawa H
508 - 511	Ohmic contacts to p-type ZnTe using electroless Pd Nishio M, Guo QX, Ogawa H
512 - 515	Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE Nishio M, Guo QX, Ogawa H
516 - 519	Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices Yamaguchi T, Yamamoto Y, Tanaka T, Yoshida A
520 - 523	Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systems Nemcsics A, Riesz F, Dobos L
524 - 527	Effects of nitrogen argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering Guo QX, Shingai N, Mitsuishi Y, Nishio M, Ogawa H
528 - 531	Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method Izumi A, Masuda A, Matsumura H
532 - 536	Instability of 2D Ge layer near the transition to 3D islands on Si(111) Shklyaev AA, Shibata M, Ichikawa M
537 - 540	Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfaces Siemens B, Domke C, Ebert P, Urban K
541 - 544	Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD Moriya A, Sakuraba M, Matsuura T, Murota J
545 - 549	Structural analysis of epitaxial TiAg MgO superlattices prepared by multi-evaporation Kado T, Nakamura K, Matsuura M
550 - 553	Initial stage oxidation at an unpaired dangling bond site on a Si(100)-2 X 1-H surface Kajiyama H, Heike S, Wada Y, Hashizume T
554 - 557	Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE Hill D, Farrell T, Bullough TJ
558 - 561	Influence of substrate misorientation on the structural characteristics of InGaAs GaAs MQW on (111)B GaAs grown by MBE Gutierrez M, Gonzalez D, Aragon G, Sanchez JJ, Izpura I, Hopkinson M, Garcia R
562 - 566	Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100) Hayashi Y, Matsuoka Y, Ikeda H, Zaima S, Yasuda Y
567 - 570	The (3 X 3) reconstruction and its evolution during the nitridation of GaAs(001) Lu J, Westwood DI, Haworth L, Hill P, Macdonald JE
571 - 574	Low temperature growth of p-type crystalline silicon films by ECR plasma CVD Wang LC, Reehal HS
575 - 578	Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100) Chalker PR, Joyce TB, Farrell T, Johnston C, Crossley A, Eccles J
579 - 582	Bi surfactant mediated epitaxy of Ge on Si(111) Horn-von Hoegen M, Heringdorf FJMZ, Kammler M, Schaeffer C, Reinking D, Hofmann KR
583 - 586	XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers Conard T, De Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R
587 - 590	Pbs-Cds bilayers prepared by the chemical bath deposition technique at different reaction temperatures Orozco-Teran RA, Sotelo-Lerma M, Ramirez-Bon R, Quevedo-Lopez MA, Mendoza-Gonzalez O, Zelava-Angel O
591 - 593	Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy Yoshino K, Fukuyama A, Yokoyama H, Meada K, Fons PJ, Yamada A, Niki S, Ikari T
594 - 597	Low temperature epitaxial growth of CeO2(110) layers on Si(100) using electron beam assisted evaporation Inoue T, Yamamoto Y, Satoh M
598 - 601	Co-sputtered Ru-Ti alloy electrodes for DRAM applications Horng RN, Wuu DS, Wu LH, Wei SC, Chan SH, Leu CC, Huang TY, Sze SM, Lee MK
602 - 604	Implantation of silicon using the boron cluster BF2 Smith R, Harrison M, Webb R
605 - 608	Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets Pan M, Wilks SP, Dunstan PR, Pritchard M, Williams RH, Cammack DS, Clark SA
609 - 611	Cross-sectional specimen preparation from ICs downside for SEM and TEM-failure analyses using focused ion beam etching Altmann F, Katzer D
612 - 615	Surfactant effect of atomic hydrogen on silicide-formation of nickel on Si(110) surfaces Ueda K, Ushirosako T, Yoshimura M
616 - 622	Wide bandgap semiconductor materials for high temperature electronics Chalker PR
623 - 626	The effect of hydrogen on the electronic properties of CVD diamond films Looi HJ, Whitfield MD, Foord JS, Jackman RB
627 - 631	Influence of B- and N-doping levels on the quality and morphology of CVD diamond Eccles AJ, Steele TA, Afzal A, Rego CA, Ahmed W, May PW, Leeds SM
632 - 636	Bond formation in ion beam synthesised amorphous gallium nitride Almeida SA, Silva SRP, Sealy BJ, Watts JF
637 - 641	Characterization of ohmic and Schottky contacts on SiC Kakanakova-Georgieva A, Marinova T, Noblanc O, Arnodo C, Cassette S, Brylinski C
642 - 645	A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering Horng RH, Wuu DS, Wei SC, Chan SH, Kung CY
646 - 649	Growth of GaAs1-xNx on GaAs(100) by chemical beam epitaxy Aardahl CL, Yun HK, Pearsall TP, Rogers JW, Qian M, Fong H, Sarikaya M
650 - 655	Low-temperature epitaxial growth of cubic SiC thin films on Si(111) using supersonic molecular jet of single source precursors Boo JH, Ustin SA, Ho W
XIII - XIII	Proceedings of the Thin Film and Electronic Materials and Processing Sessions from the 14th International Vacuum Congress, Birmingham, UK, 31 August-4 September, 1998 - Preface Jackman RB, Petty M