Titanium-dioxide (TiO2) films with a rough surface was grown on silicon by heating a structure of titanium/silicon-oxide/silicon in oxygen at 1000 degrees C. The TiO2 film growth is attributed to differences in the Gibbs free energy between the titanium-dioxide and the silicon-oxide. Lower temperature preheating of the titanium/silicon-oxide/silicon structure before the solid-phase reaction was favorable for preparing TiO2 films with a smooth surface on silicon. The grown films were preferentially (110) orientated rutile-TiO2 polycrystals containing TiSi and TiO phases. A titanium-silicide layer formed near the interface between titanium-oxide and the silicon was employed as a suitable electrode of the capacitors fabricated with the titanium-oxide films. Titanium-oxide films formed by preheating at 400 degrees C had high dielectric constants epsilon(0) of (20-25), resistivities of about 4 x 10(10) Ohm cm, and a breakdown held around 10(6) V/cm.