We report on the growth of thick (up to 4 mu m) p-type crystalline silicon films on silicon from silane using the technique of electron cyclotron resonance (ECR) plasma-assisted chemical vapour deposition (PACVD) at temperatures <700 degrees C. Epitaxial growth was obtained at similar to 680 degrees C for growth rates in the region of 25 nm/min. At lower temperatures the films are microcrystalline with varying degrees of crystallinity depending on growth conditions.