Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.15, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (208 articles)

1853 - 1860	Electrostatic tip-surface interaction in scanning force microscopy : A convenient expression useful for arbitrary tip and sample geometries Zypman FR, Eppell SJ
1861 - 1864	Local work function for Cu(111)-Au surface studied by scanning tunneling microscopy Jia JF, Inoue K, Hasegawa Y, Yang WS, Sakurai T
1865 - 1870	In situ scanning force microscopy study of TiN layers in sulphuric acid Herranen M, Nordin M, Carlsson JO
1871 - 1875	Scanning thermal microscope tip-induced chemical reaction on solid organometallic compound thin films Zhou L, Xu GQ, Ng HT, Li SFY
1876 - 1883	Tunneling spectroscopy on semiconductors with a low surface state density Sommerhalter C, Matthes TW, Boneberg J, Leiderer P, Lux-Steiner MC
1884 - 1888	Dielectric breakdown of silicon oxide studied by scanning probe microscopy Yasue T, Yoshida Y, Koyama H, Kato T, Nishioka T
1889 - 1892	Synthesis, structure, and optical properties of nanometer-sized In2O3 capped by anionic surfactant Wu XC, Wang RY, Zou BS, Wu PF, Xu JR, Wei H
1893 - 1898	Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7x7 surface by nitrogen ions Ha JS, Park KH, Yun WS, Lee EH, Park SJ
1899 - 1901	Fourier transform infrared study of porous silicon dipped into Cr3+ solution Huang YM, Zhai BG
1902 - 1907	Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor Kongetira P, Neudeck GW, Takoudis CG
1908 - 1912	Determination of trace metallic impurities on 200-mm silicon wafers by time-of-flight secondary-ion-mass spectroscopy Chu PK, Schueler BW, Reich F, Lindley PM
1913 - 1918	Degradation measurements using fully processed test transistors in high density plasma reactors for failure analysis Muniandy R, Boylan R, Chin R, Bell N, Sankman R
1919 - 1926	Low temperature deposition of SiNx : H using SiH4-N-2 or SiH4-NH3 distributed electron cyclotron resonance microwave plasma Delmotte F, Hugon MC, Agius B, Courant JL
1927 - 1935	Effects of cleaning and postoxidation annealing on thin oxides Franco G, Camalleri CM, Raineri V, Ghidini G, Clementi C, Pellizzer F
1936 - 1942	Integration of unit processes in a shallow trench isolation module for a 0.25 mu m complementary metal-oxide semiconductor technology Chatterjee A, Ali I, Joyner K, Mercer D, Kuehne J, Mason M, Esquivel A, Rogers D, O'Brien S, Mei P, Murtaza S, Kwok SP, Taylor K, Nag S, Hames G, Hanratty M, Marchman H, Ashburn S, Chen IC
1943 - 1948	Correlated electrical and optical measurements of firing semiconductor bridges Kim J, Kim SG, Jungling KC
1949 - 1953	Generation of subquarter-micron resist structures using optical interference lithography and image reversal Decker JY, Fernandez A, Sweeney DW
1954 - 1960	Investigation of the proximity effect in amorphous AlF3 electron-beam resists Chen GS, Humphreys CJ
1961 - 1965	Air-bridges, air-ramps, planarization, and encapsulation using pyrolytic photoresist in the fabrication of three-dimensional microstructures Porkolab GA, Chen YJ, Tabatabaei SA, Agarwala S, Johnson FG, King O, Dagenais M, Frizzell RE, Beard WT, Stone DR
1966 - 1970	Polarization-dependent contrast in near-field optical microscopy Kobayashi K, Watanuki O
1971 - 1982	Synthesis of electrostatic focusing and deflection systems Szilagyi M, Cho H
1983 - 1986	Effect of rapid thermal annealing on the microstructure and electrical characteristics of Au/Ni/Au/Ge/Ni multilayers deposited on n-type InGaAs Morais J, Fazan TA, Landers R, Pereira RG, Sato EAS, Carvalho W
1987 - 1989	Bias-temperature stability of the Cu(Mg)/SiO2/p-Si metal-oxide-semiconductor capacitors de Felipe TS, Murarka SP, Bedell S, Lanford WA
1990 - 1994	Characterization of AL-Y alloy thin films deposited by direct current magnetron sputtering Liu Y, Singh R, Poole K, Diefendorf RJ, Harriss J, Cannon K
1995 - 2000	Growth and fractal scaling nature of copper thin films on TiN surface by metal organic chemical vapor deposition from hexafluoroacethylacetonate Cu-(I) vinyltrimethylsilane Park YB, Rhee SW, Hong JH
2001 - 2010	Effect of the in situ thermal treatments on Ir/n-type Si(111) Schottky contacts Jimenez-Leube FJ, Clement M, Sanz-Maudes J, Blanco JM, Serrano JJ
2011 - 2015	Influence of AlSiTi grain boundaries on the plasma etch rate Schonbachler E, Lecohier B, Fichtner W
2016 - 2020	Schottky contacts on reactive-ion etched InGaP Kuzmik J, Darmo J, Kudela R, Hascik S, Mozolova Z
2021 - 2025	Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer Jiang C, Xu B, Li HX, Liu FQ, Gong Q, Zhou W, Zhu DH, Liang JB, Wang ZG
2026 - 2030	Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures Theiring SC, Pillai MR, Barnett SA, Wessels BW
2031 - 2036	Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H-2/O-2/Ar reactive ion etching Schramm JE, Babic DI, Hu EL, Bowers JE, Merz JL
2037 - 2045	High-resolution depth profiling of InxGa1-xAs/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques Gerardi C, Giannini C, Passaseo A, Tapfer L
2046 - 2051	Surface modification of InP by diffraction-patterning utilizing laser dry etching Prasad M, Ruda HE, Dubowski JJ
2052 - 2056	Compression in transconductance at low gate voltages in submicron GaAs metal semiconductor field-effect transistors Ahmed MM
2057 - 2066	Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy Halder NC, Goodman T
2067 - 2071	Electrical characterization of diamond and graphite coated Mo field emitters McClure MT, Schlesser R, McCarson BL, Sitar Z
2072 - 2076	Field emission characteristics of diamondlike carbon films synthesized by pulsed laser deposition process using a Au-intermediate layer Chuang FY, Wang WC, Cheng HF, Sun CY, Lin IN
2077 - 2078	Silicon nanocolloids prepared by a newly designed dc sputtering apparatus Zhu Y, Kimura K, Zhang LD
2091 - 2091	Papers from the 41st International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Preface Owen G
2093 - 2100	Nanofabrication using neutral atomic beams Thywissen JH, Johnson KS, Younkin R, Dekker NH, Berggren KK, Chu AP, Prentiss M, Lee SA
2101 - 2108	Single electron electronics : Challenge for nanofabrication Ahmed H
2109 - 2111	Potentials and challenges for lithography beyond 193 nm optics Canning J
2112 - 2116	Lithography with 157 nm lasers Bloomstein TM, Horn MW, Rothschild M, Kunz RR, Palmacci ST, Goodman RB
2117 - 2124	X-ray lithography : Status, challenges, and outlook for 0.13 mu m Silverman JP
2125 - 2129	Electron beam lithography for 0.13 mu m manufacturing McCord MA
2130 - 2135	Scattering with angular limitation projection electron beam lithography for suboptical lithography Harriott LR
2136 - 2138	Ion projection lithography : Next generation technology? Gross G
2139 - 2145	Two-dimensional stage self-calibration : Role of symmetry and invariant sets of points Raugh MR
2146 - 2150	Neural network model for global alignment incorporating wafer and stage distortion Ghazanfarian AA, Pease RFW, Chen X, McCord MA
2151 - 2154	Monitoring of subquartermicron line and space pattern by ellipsometry Arimoto H
2155 - 2161	Scanning electron microscope matching and calibration for critical dimensional metrology Marchman H
2162 - 2166	Photon tunneling microscopy of latent resist images Liddle JA, Fernandez AT, Cirelli R, Mkrtchyan MM, Novembre AE, Peabody ML, Watson GP
2167 - 2172	Application of transmission electron detection to SCALPEL mask metrology Farrow RC, Postek MT, Keery WJ, Jones SN, Lowney JR, Blakey M, Fetter LA, Griffith JE, Liddle JA, Hopkins LC, Huggins HA, Peabody M, Novembre A
2173 - 2176	Obtaining a physical two-dimensional Cartesian reference Takac MT, Ye J, Raugh MR, Pease RF, Berglund CN, Owen G
2177 - 2180	Evaluation of the long-term stability of critical-dimension measurement scanning electron microscopes using a calibration standard Mizuno F, Shimizu M, Sasada K, Mizuno T
2181 - 2184	Contamination reduction in low voltage electron-beam microscopy for dimensional metrology Bruenger WH, Kleinschmidt H, Hassler-Grohne W, Bosse H
2185 - 2188	Accurate alignment on asymmetrical signals Chen X, Ghazanfarian AA, McCord M, Pease RFW
2189 - 2192	Wall angle measurement with a scanning probe microscope employing a one-dimensional force sensor Griffith JE, Hopkins LC, Bryson CE, Berghaus A, Snyder EJ, Plombon JJ, Vasilyev LA, Hecht M, Bindell JB
2193 - 2196	Design and characterization of a high numerical aperture lens system for scanned laser lithography Allen PC, Bohan MJ, Buck PD
2197 - 2203	Metrology of scattering with angular limitation projection electron lithography masks Liddle JA, Blakey MI, Saunders T, Farrow RC, Fetter LA, Knurek CS, Kasica R, Novembre AE, Peabody ML, Tennant DM, Windt DL, Postek M
2204 - 2208	Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography Muray LP, Anderson EH, Boegli V
2209 - 2213	Measurement of resist heating in photomask fabrication Babin S
2214 - 2217	Ion absorbing stencil mask coatings for ion beam lithography Wasson JR, Torres JL, Rampersad HR, Wolfe JC, Ruchhoeft P, Herbordt M, Loschner H
2218 - 2223	Novel technique for improving pattern placement in membrane mask making Perkins FK, Marrian CRK, Peckerar MC
2224 - 2227	Conductive polyaniline : Applications in x-ray mask making Lawliss MS, Rocque JM, Angelopoulos M, Puisto DM, Henry RW
2228 - 2231	Low-stress sputtered chromium-nitride hardmasks for x-ray mask fabrication Tsuboi S, Kotsuji S, Yoshihara T, Suzuki K
2232 - 2237	Uniform low stress oxynitride films for application as hardmasks on x-ray masks Dauksher WJ, Resnick DJ, Smith SM, Pendharkar SV, Tompkins HG, Cummings KD, Seese PA, Mangat PJS, Chan JA
2238 - 2242	Automatic mask generation in x-ray lithography Bollepalli BS, Khan M, Cerrina F
2243 - 2248	Practical approach to separating the pattern generator-induced mask CD errors from the blank/process-induce mask CD errors using conventional market measurements Han LQ, Wang WD, McCord MA, Berglund CN, Pease RFW, Weaver LS
2249 - 2254	Pattern placement errors in mask membranes Fisher AH, Laudon MF, Engelstad RL, Lovell EG, Cerrina F
2255 - 2258	Revisiting phase shifting masks in x-ray lithography Khan M, Bollepalli S, Cerrina F
2259 - 2262	Plasma reactive ion etching of 193 nm attenuated phase shift mask materials Smith BW, Fonseca C, Zavyalova L, Alam Z, Bourov A
2263 - 2268	Effects of accelerating voltage and pattern size on electron scattering by electron-beam mask Yamashita H, Nomura E, Nozue H
2269 - 2273	Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures Drouin D, Beauvais J, Lavallee E, Michel S, Mouine J, Gauvin R
2274 - 2278	Process development of sub-0.5 mu m nonvolatile magnetoresistive random access memory arrays Nordquist K, Pendharkar S, Durlam M, Resnick D, Tehrani S, Mancini D, Zhu T, Shi J
2279 - 2283	Electron optical system for the x-ray mask writer EB-X2 Saito K, Morita H, Kato J, Shimazu N
2284 - 2288	Performance of Zr/O/W Schottky emitters at reduced temperatures Kim HS, Yu ML, Thomson MGR, Kratschmer E, Chang THP
2289 - 2292	Blanked aperture array for parallel electron beam lithography Winograd GI, Pease RFW, McCord MA
2293 - 2297	Spatial-phase-locked electron-beam lithography with a delay-locked loop Goodberlet J, Ferrera J, Smith HI
2298 - 2302	Energy dependence of proximity parameters investigated by fitting before measurement tests Aparshina LI, Dubonos SV, Maksimov SV, Svintsov AA, Zaitsev SI
2303 - 2308	Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correction Cook BD, Lee SY
2309 - 2312	Dose modification proximity effect correction scheme with inherent forward scattering corrections Watson GP, Fetter LA, Liddle JA
2313 - 2317	Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing Ham YM, Lee C, Kim SH, Chun K
2318 - 2322	Atomic force microscope studies of nanolithographic exposure and development of polymethylmethacrylate Dobisz EA, Brandow SL, Snow E, Bass R
2323 - 2326	Resist processes for low-energy electron-beam lithography Schock KD, Prins FE, Strahle S, Kern DP
2327 - 2331	Control in sub-100 nm lithography in SAL-601 Dobisz EA, Marrian CRK
2332 - 2336	Minimum emission current of liquid metal ion sources Beckman JC, Chang THP, Wagner A, Pease RFW
2337 - 2341	Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth Sazio PJA, Jones GAC, Linfield EH, Ritchie DA
2342 - 2345	N channel metal-oxide-semiconductor field-effect transistor with 0.15 mu m gate delineated by focused ion beam lithography Suzuki K, Yamashita M, Kawakami N, Nakaue A
2346 - 2349	Focused ion beam sputter yield change as a function of scan speed Santamore D, Edinger K, Orloff J, Melngailis J
2350 - 2354	Focused ion beam milling : Depth control for three-dimensional microfabrication Vasile MJ, Niu Z, Nassar R, Zhang W, Liu S
2355 - 2357	Chemically amplified deep ultraviolet resist for positive tone ion exposure Bruenger WH, Torkler M, Buchmann LM, Finkelstein W
2358 - 2361	Printing halftone photographic images on diamond by focused silicon ion implantation Erickson LE, Champion HG, Fraser JW, Hussey R, Schmuki P, Porco C
2362 - 2364	Nanoparticle impact micromachining Gruber A, Gspann J
2365 - 2368	Development of a high brightness gas field ion source Edinger K, Yun V, Melngailis J, Orloff J, Magera G
2369 - 2372	Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover Kruit P, Barth JE, Lammer G, Chalupka A, Vonach H, Loschner H, Stengl G
2373 - 2378	Optimization of experimental operating parameters for very high resolution focused ion beam applications Gierak J, Vieu C, Schneider M, Launois H, Ben Assayag G, Septier A
2379 - 2381	Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling Chen CH, Trajanovic Z, Dong ZW, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J
2382 - 2386	Programmable aperture plate for maskless high-throughput nanolithography Berry IL, Mondelli AA, Nichols J, Melngailis J
2387 - 2393	Data analysis methods for evaluating lithographic performance Ferguson RA, Martino RM, Brunner TA
2394 - 2398	Algorithm for shifter placement with flexible order prioritizing Haruki T, Tomita J, Asai S, Hanyu I
2399 - 2403	Characterizing partial coherence uniformity in a deep ultraviolet step and repeat tool Watson GP, Cirelli RA, Mkrtchyan M, Travers RJ
2404 - 2411	Photolithography at 0.10 and 0.13 mu m using ArF excimer laser lithography in combination with resolution enhancement techniques Chan M, Kunz RR, Doran SP, Rothschild M
2412 - 2416	Optimal coherent decompositions for radially symmetric optical systems von Bunau RM, Pati YC, Wang YT, Pease RFW
2417 - 2421	Fresnel diffraction mask for optical projection lithography Watanabe H, Okuda Y
2422 - 2425	Towards 280 nm i-line random logic lithography with off-axis illumination and optical proximity correction Grodnensky I, Watson GP, Garofalo J, Castro D, Zych L, Lee W
2426 - 2433	Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars Chen JF, Laidig T, Wampler KE, Caldwell R
2434 - 2438	Viability of conventional KrF imaging for 150 nm lithography Azuma T, Matsunaga K, Kawamura D, Mimotogi S, Onishi Y
2439 - 2443	Methods for fabricating arrays of holes using interference lithography Fernandez A, Decker JY, Herman SM, Phillion DW, Sweeney DW, Perry MD
2444 - 2447	Investigation into excimer laser radiation damage of deep ultraviolet optical phase masking films Smith BW, Zavyalova L, Bourov A, Butt S, Fonseca C
2448 - 2451	Use of attenuated phase masks in extreme ultraviolet lithography Wood OR, White DL, Bjorkholm JE, Fetter LE, Tennant DM, MacDowell AA, LaFontaine B, Kubiak GD
2452 - 2454	Mask blanks for extreme ultraviolet lithography : Ion beam sputter deposition of low defect density Mo/Si multilayers Kearney PA, Moore CE, Tan SI, Vernon SP, Levesque RA
2455 - 2461	At-wavelength interferometry for extreme ultraviolet lithography Tejnil E, Goldberg KA, Lee SH, Medecki H, Batson PJ, Denham PE, MacDowell AA, Bokor J, Attwood D
2462 - 2466	At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source Ray-Chaudhuri AK, Krenz KD, Fields CH
2467 - 2470	Minimum critical defects in extreme-ultraviolet lithography masks Lin Y, Bokor J
2471 - 2475	Evaluation of alignment accuracy in processed wafers and SiC masks on a scattered-light alignment system for x-ray aligners Miyatake T, Hirose M, Shoki T, Ohkubo R, Yamazaki K
2476 - 2482	Overlay performance of 180 nm ground rule generation x-ray lithography aligner Chen AC, Flamholz AL, Rippstein R, Fair RH, Heald DA, Amodeo RJ
2483 - 2488	Origin of stress distribution in sputtered x-ray absorber film Iba Y, Kumasaka F, Aoyama H, Taguchi T, Yamabe M
2489 - 2494	Sub-20 nm x-ray nanolithography using conventional mask technologies on monochromatized synchrotron radiation Simon G, Haghiri-Gosnet AM, Bourneix J, Decanini D, Chen Y, Rousseaux F, Launois H, Vidal B
2495 - 2502	X-ray micro- and nanofabrication using a laser-plasma source at 1 nm wavelength Turcu ICE, Allot RM, Mann CM, Reeves C, Ross IN, Lisi N, Maddison BJ, Moon SW, Prewett P, Stevenson JTM, Ross AWS, Gundlach AM, Koek B, Mitchell P, Anastasi P, McCoard C, Kim NS
2503 - 2508	Novel illumination system of synchrotron radiation stepper with full field exposure method Watanabe Y, Hara S, Mizusawa N, Fukuda Y, Uzawa S
2509 - 2513	Direct measurement of the effect of substrate photoelectrons in x-ray nanolithography Carter DJD, Pepin A, Schweizer MR, Smith HI, Ocola LE
2514 - 2516	X-ray fabrication of nonorthogonal structures using "surface" masks White V, Herdey C, Denton DD, Song J
2517 - 2521	X-ray lithography for <= 100 nm ground rules in complex patterns Hector S, Pol V, Krasnoperova A, Maldonado J, Flamholz A, Heald D, Stahlhammer C, Galburt D, Amodeo R, Donohue T, Wind S, Buchigniano J, Viswanathan R, Khan M, Bollepalli S, Cerrina F
2522 - 2527	Design and fabrication of Fresnel zone plates with large numbers of zones Chen Z, Vladimirsky Y, Brown M, Leonard Q, Vladimirsky O, Moore F, Cerrina F, Lai B, Yun W, Gluskin E
2528 - 2533	Resist design concepts for 193 nm lithography : Opportunities for innovation and invention Reichmanis E, Nalamasu O, Houlihan FM, Wallow TI, Timko AG, Cirelli R, Dabbagh G, Hutton RS, Novembre AE, Smith BW
2534 - 2540	Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure : Implementation of 248 and 193 nm resists Mortini B, Tedesco S, Dal'Zotto B, Paniez P
2541 - 2544	Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists Itani T, Yoshino H, Hashimoto S, Yamana M, Samoto N, Kasama K
2545 - 2549	Latent image characterization of postexposure bake process in chemically amplified resists Ocola LE, Cerrina F, May T
2550 - 2554	Deep ultraviolet resists AZ DX-561 and AZ DX-1300P applied for electron beam and masked ion beam lithography Hudek P, Kostic I, Belov M, Rangelow IW, Shi F, Pawlowski G, Spiess W, Buschbeck H, Cekan E, Eder S, Loschner H
2555 - 2560	Low energy electron beam top surface image processing using chemically amplified AXT resist Whelan CS, Tanenbaum DM, La Tulipe DC, Isaacson M, Craighead HG
2561 - 2564	Theoretical discussion of diffusion effects in negative chemically amplified resists based on contrast curve simulation Patsis GP, Meneghini G, Glezos N, Argitis P
2565 - 2569	Stress dependent silylation model and two-dimensional profile simulation Zuniga MA, Neureuther AR
2570 - 2574	C-60-incorporated nanocomposite resist system for practical nanometer pattern fabrication Ishii T, Nozawa H, Tamamura T, Ozawa A
2575 - 2581	Increasing plasma etch resistance of resists using fullerene additives Dentinger PM, Taylor JW
2582 - 2586	Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of t-butoxycarbonyl groups Kozawa T, Nagahara S, Yoshida Y, Tagawa S, Watanabe T, Yamshita Y
2587 - 2595	Optimizing the resist to the aerial image in a chemically amplified system Fedynyshyn TH, Szmanda CR, Cernigliaro GJ
2596 - 2600	Nanolithography performances of ultraviolet III chemically amplified positive resist Grella L, Gentili M, Di Fabrizio E, Baciocchi M, Mastrogiacomo L, Maggiora R, Scopa L
2601 - 2604	Investigation of the notching effect for single layer deep ultraviolet resist processing Yoshino H, Itani T, Hashimoto S, Yamana M, Yoshii T, Samoto N, Kasama K
2605 - 2609	Top surface imaging process at and below quarter-micron resolution and pattern transfer into metal Irmscher M, Hofflinger B, Reuter C, Springer R, Stauffer C, Puttock M
2610 - 2615	T-top forming simulation using percolation theory Kamon K, Nakazawa K, Yamaguchi A, Matsuzawa N, Ohfuji T, Kanzaki K, Tagawa S
2616 - 2620	Developer temperature effect on negative deep ultraviolet resists : Characterization, modeling, and simulation Hagouel PI, Karafyllidis I, Neureuther AR
2621 - 2626	Ultrasonic and dip resist development processes for 50 nm device fabrication Lee KL, Bucchignano J, Gelorme J, Viswanathan R
2627 - 2631	Quarter-micron chemically amplified reaction image determination using arrested development Rhyner SJ, Taylor JW
2632 - 2638	Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist Dentinger PM, Taylor JW
2639 - 2642	0.1 mu m WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with SF6-CF4-SiF4-O-2 Jin Y, Takahashi C, Nishimura K, Ono T, Matsuo S
2643 - 2647	Time dependence of etch-induced damage generated by an electron cyclotron resonance source Berg EW, Pang SW
2648 - 2651	Characterization of the radiation-enhanced diffusion of dry-etch damage in n-GaAs Chen CH, Chiu YJ, Hu EL
2652 - 2655	Ion induced damage in strained CdZnSe/ZnSe quantum well structures Sparing LM, Wang PD, Mintairov AM, Lee S, Bindley U, Chen CH, Shi SS, Furdyna JK, Merz JL, Snider GL
2656 - 2660	Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials Kummell T, Bacher G, Forchel A, Nurnberger J, Faschinger W, Landwehr G, Jobst B, Hommel D
2661 - 2665	High reflectivity micromirrors fabricated by coating high aspect ratio Si sidewalls Juan WH, Kao YH, Pang SW
2666 - 2671	Layer-by-layer sputtering of Si(111) and (001) surfaces mediated by surface vacancy diffusion : Surface physics and application for nanofabrication Watanabe H, Ichikawa M
2672 - 2675	Role of defect diffusion in the InP damage profile Yu DG, Chen CH, Holmes AL, DenBaars SP, Hu EL
2676 - 2681	Interactive effects in reactive ion etching of W1-xGex van der Drift E, Dinh BQ, Verhoeven PA, Fakkeldij EJM, Zuiddam MR, Zijlstra T
2682 - 2687	Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N-2/Ar/SiH4 Moshkalyov SA, Diniz JA, Swart JW, Tatsch PJ, Machida M
2688 - 2691	Protective film by magnetic plasma polymerization on a Y-Ba-Cu-O superconductor Jin XY, Zhang Y, Wang R, Chen KS, Liang SZ
2692 - 2701	Electron and ion optical design software for integrated circuit manufacturing equipment Munro E
2702 - 2706	Compact electrostatic lithography column for nanoscale exposure Chisholm T, Liu HN, Munro E, Rouse J, Zhu XQ
2707 - 2712	Semiconductor on glass photocathodes for high throughput maskless electron beam lithography Baum AW, Schneider JE, Pease RFW, McCord MA, Spicer WE, Costello KA, Aebi VW
2713 - 2717	Micromachined single-crystal silicon electron lenses Hofmann W, MacDonald NC
2718 - 2724	Filter design methodology for defect detection in wafer inspection Socha RJ, Neureuther AR
2725 - 2728	Electrostatic deflection aberrations revisited : Solution proposed to an old problem Retsky M
2729 - 2731	Micro-extraction spectrometer structures for voltage contrast in the scanning electron microscope Dinnis AR
2732 - 2736	Spherical aberration corrector using space charge Chao LC, Orloff J, Wang L
2737 - 2741	Novel objective lens for low voltage electron beam imaging Liu W, McCord M, Pease RF
2742 - 2748	Miniature electron beam column with a silicon micro field emitter Honjo I, Endo Y, Goto S
2749 - 2753	Fabrication of multiple microcolumn array combined with field emission array Park JY, Lera JD, Yakshin MA, Choi SS, Lee Y, Chun KJ, Lee JD, Jeon D, Kuk Y
2754 - 2759	Optimization of field-emission columns for next-generation MEBES (R) systems Pearce-Percy H, Abboud F, Garcia R, Mankos M
2760 - 2763	Fabrication of nanoelectromechanical systems in single crystal silicon using silicon on insulator substrates and electron beam lithography Carr DW, Craighead HG
2764 - 2767	New fabrication techniques for high quality photonic crystals Cheng CC, Scherer A, Tyan RC, Fainman Y, Witzgall G, Yablonovitch E
2768 - 2772	Surface micromachined membranes for tunnel transducers Wong J, Scherer A, George T
2773 - 2776	Fabrication and behavior of nanoscale field emission structures Driskill-Smith AAG, Hasko DG, Ahmed H
2777 - 2781	Field emission from gated Si emitter tips with precise gate tip spacing, gate diameter, tip sharpness, and tip protrusion Rakhshandehroo MR, Pang SW
2782 - 2785	Field emission displays based on linear horizontal field emission cathodes Kuo HP, Burriesci SF, Lin J, Miller DJ
2786 - 2790	Optical manipulation of a lasing microparticle and its application to near-field microspectroscopy Sasaki K, Fujiwara H, Masuhara H
2791 - 2794	Wire-channel and wrap-around-gate metal-oxide-semiconductor field-effect transistors with a significant reduction of short channel effects Leobandung E, Gu J, Guo LJ, Chou SY
2795 - 2798	New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates Rishton SA, Ismail K, Chu JO, Chan KK, Lee KY
2799 - 2805	Gate technology for 70 nm metal-oxide-semiconductor field-effect transistors with ultrathin (< 2 nm) oxides Tennant D, Klemens F, Sorsch T, Baumann F, Timp G, Layadi N, Kornblit A, Sapjeta BJ, Rosamilia J, Boone T, Weir B, Silverman P
2806 - 2808	Fabrication of 30 nm gate length electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors using a calixarene resist Sakamoto T, Kawaura H, Baba T, Fujita J, Ochiai Y
2809 - 2815	Lateral tunnel junction produced by electron-beam-induced deposition Komuro M, Hiroshima H
2816 - 2820	Self-aligned subchannel implant complementary metal-oxide semiconductor devices fabrication Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J
2821 - 2824	Fabrication and transport study of finite lateral superlattices Hannan M, Grundbacher R, Fay P, Adesida I, Giannetta RW, Wagner CJ, Melloch MR
2825 - 2828	Fabrication of planar silicon nanowires on silicon-on-insulator using stress limited oxidation Kedzierski J, Bokor J, Kisielowski C
2829 - 2831	Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths Wang KH, Pecher A, Hofling E, Forchel A
2832 - 2835	Differential charge detection for quantum-dot cellular automata Amlani I, Orlov AO, Snider GL, Bernstein GH
2836 - 2839	Metal-oxide-semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material Koster T, Hadam B, Hofmann K, Gondermann J, Stein J, Hu S, Altmeyer S, Spangenberg B, Kurz H
2840 - 2843	Fabrication and characterization of room temperature silicon single electron memory Guo LJ, Leobandung E, Zhuang L, Chou SY
2844 - 2847	Single-electron transistor as a charge sensor for semiconductor applications Berman D, Zhitenev NB, Ashoori RC, Smith HI, Melloch MR
2848 - 2854	Cell attachment on silicon nanostructures Turner S, Kam L, Isaacson M, Craighead HG, Shain W, Turner J
2855 - 2858	Comparative study of gated single crystal silicon and polysilicon field emitters Huq SE, Grayer GH, Prewett PD
2859 - 2863	Efficient diffractive optics made by single-step electron beam lithography in solid PMMA Cumming DRS, Khandaker II, Thoms S, Casey BG
2864 - 2867	Application of amorphous silicon subwavelength gratings in polarization switching vertical-cavity surface-emitting lasers Chou SY, Schablitsky SJ, Zhuang L
2868 - 2871	Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Yamamoto J, Uchino S, Ohta H, Yoshimura T, Murai F
2872 - 2876	Process optimization for production of sub-20 nm soft x-ray zone plates Spector SJ, Jacobsen CJ, Tennant DM
2877 - 2881	Influence of secondary electrons in proximal probe lithography Volkel B, Golzhauser A, Muller HU, David C, Grunze M
2882 - 2886	Ion trap for mass-selective production of nanoclusters Kanayama T, Murakami H
2887 - 2891	Nanochannel fabrication for chemical sensors Stern MB, Geis MW, Curtin JE
2892 - 2896	Nanometer biodevice fabrication by electron beam lithography Di Fabrizio E, Grella L, Baciocchi M, Gentili M, Ascoli C, Cappella B, Frediani C, Morales P
2897 - 2904	Sub-10 nm imprint lithography and applications Chou SY, Krauss PR, Zhang W, Guo LJ, Zhuang L
2905 - 2911	Nanolithography with neutral chromium and helium atoms Brezger B, Schulze T, Drodofsky U, Stuhler J, Nowak S, Pfau T, Mlynek J
2912 - 2915	New approaches to atomic force microscope lithography on silicon Birkelund K, Thomsen EV, Rasmussen JP, Hansen O, Tang PT, Moller P, Grey F
2916 - 2920	"Safe" solvent resist process for sub-quarter micron T-gates Via D, Bozada C, Cerny C, DeSalvo G, Dettmer R, Ebel J, Gillespie J, Jenkins T, Nakano K, Pettiford C, Quach T, Sewell J
2921 - 2924	Influence of electron-beam induced microporosity on masking properties of polymethylmethacrylate in wet etching of nanometer structures Maximov I, Bogdanov AL, Montelius L
2925 - 2929	Fabrication and near-room temperature transport of patterned gold cluster structures Clarke L, Wybourne MN, Yan MD, Cai SX, Brown LO, Hutchison J, Keana JFW
2930 - 2933	Characterization of Si-doped layer in GaAs fabricated by a focused ion beam molecular beam epitaxy combined system Yanagisawa J, Nakayama H, Oka K, Nakai M, Wakaya F, Yuba Y, Takaoka S, Murase K, Gamo K
2934 - 2939	Direct epitaxial growth of thin-film structures Eres G, Hui FYC, Thundat T, Joy DC
2940 - 2945	Super-smooth x-ray reflection grating fabrication Franke AE, Schattenburg ML, Gullikson EM, Cottam J, Kahn SM, Rasmussen A
2946 - 2949	Subwavelength, binary lenses at infrared wavelengths Wendt JR, Vawter GA, Smith RE, Warren ME