Integration of unit processes in a shallow trench isolation module for a 0.25 mu m complementary metal-oxide semiconductor technology

Chatterjee A; Ali I; Joyner K; Mercer D; Kuehne J; Mason M; Esquivel A; Rogers D; O'Brien S; Mei P; Murtaza S; Kwok SP; Taylor K; Nag S; Hames G; Hanratty M; Marchman H; Ashburn S; Chen IC

Journal of Vacuum Science & Technology B, Vol.15, No.6, 1936-1942, 1997

Chatterjee A, Ali I, Joyner K, Mercer D, Kuehne J, Mason M, Esquivel A, Rogers D, O'Brien S, Mei P, Murtaza S, Kwok SP, Taylor K, Nag S, Hames G, Hanratty M, Marchman H, Ashburn S, Chen IC

This article presents a study of the issues in integrating the pattern, fill, planarization, and surface cleanup processes to design a shallow trench isolation (STI) flow suitable for 0.25 mu m complementary metal-oxide semiconductor technologies. Technological choices and their effects on the characteristics of the STI technology are discussed. Experimental data are presented to illustrate how process choices at various stages of the STI flow are made to optimize the STI structure.