L13 - L15 |
120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors Yamashita Y, Endoh A, Ikeda K, Hikosaka K, Mimura T, Higashiwaki M, Matsui T, Hiyamizu S |
1849 - 1855 |
Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP |
1856 - 1865 |
Protein binding on thermally grown silicon dioxide Lee SC, Keener MT, Tokachichu DR, Bhushan B, Barnes PD, Cipriany BR, Gao M, Brillson LJ |
1866 - 1872 |
Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow-k interconnects Chen Z, Prasad K, Jiang N, Tang LJ, Lu PW, Li CY |
1873 - 1876 |
Formation of vertical ridge structure in 660 nm laser diodes for high power single mode operation Cho S, Lee S, Kang J, Ma B, Lee C, Shin Y, Kim B, Kang D, Kim Y, Park Y |
1877 - 1882 |
As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics Tilke AT, Forster M, Schupke K, Freigofas A, Wagner C, Dahl C |
1883 - 1886 |
Thermal conductivity of B-C-N and BN nanotubes Chang CW, Han WQ, Zettl A |
1887 - 1890 |
Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography Chen K, Cybart SA, Dynes RC |
1891 - 1894 |
Pt-coated InN nanorods for selective detection of hydrogen at room temperature Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ |
1895 - 1900 |
Electron beam lithography with negative Calixarene resists on dense materials: Taking advantage of proximity effects to increase pattern density Buhlmann S, Muralt P, Kuenzi PA, Staufer U |
1901 - 1904 |
Effect of film thickness on the ferroelectric properties of Pb(Zr0.2Ti0.8)O-3 thin films for nano-data storage applications Lee WS, Ahn KC, Yoon SG, Kim CS |
1905 - 1908 |
Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer Chen SY, Chen LJ, Tzeng SD, Gwo S |
1909 - 1912 |
Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors Huang CY, Ou TM, Chou ST, Tsai CS, Wu MC, Lin SY, Chi JY |
1913 - 1923 |
Towards a controlled patterning of 10 nm silicon gates in high density plasmas Pargon E, Darnon M, Joubert O, Chevolleau T, Vallier L, Mollard L, Lill T |
1924 - 1928 |
Silver coplanar waveguides as the passive components of choice for microwave integrated circuits Levenets VV, Amaya RE, Tarr NG, Smy TJ, Rogers JWM |
1929 - 1935 |
Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs Zimmerman JD, Brown ER, Gossard AC |
1936 - 1942 |
Investigations on the mechanism of silicon etching with chlorine-trifluoride Hochst A, Fischer F, Kirbach G, Urban A, Becker V, Irmscher M, Sailer H, Kern DP |
1943 - 1947 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor Cheng CC, Tsai YY, Lin KW, Chen HI, Hsu WH, Hong CW, Lin HL, Liu WC |
1948 - 1951 |
Field-emission characteristics of boron-carbon-nitride nanofilm Kimura C, Shima H, Okada K, Funakawa S, Sugino T |
1952 - 1955 |
Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping Chang JJ, Liu CP, Hsieh TE, Wang YL |
1956 - 1963 |
Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films Vamvakas VE, Davazoglou D |
1964 - 1969 |
Spindt tip composed of carbon nanotubes Moon JH, Lim SH, Yoon HS, Park KC, Kang S, Bae C, Kim JJ, Jang J |
1970 - 1974 |
Electrical and optical characteristics of hydrogen-plasma treated ZnO nanoneedles Yoo J, Park WI, Yi GC |
1975 - 1979 |
Density of electron-beam-induced amorphous carbon deposits Nishio M, Sawaya S, Akita S, Nakayama Y |
1980 - 1983 |
Surface-enhanced Raman spectroscopy of nanodiamond particles on silver Perevedentseva E, Karmenyan A, Chung PH, Cheng CL |
1984 - 1991 |
Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations Rhallabi A, Gaillard M, Elmonser L, Marcos G, Talneau A, Pommereau F, Pagnod-Rossiaux P, Landesman JP, Bouadma N |
1992 - 1997 |
Microelectromechanical device for lateral force calibration in the atomic force microscope: Lateral electrical nanobalance Cumpson PJ, Hedley J, Clifford CA |
1998 - 2002 |
Synthesis, characterization, and investigation of a conformationally immobile calix[6]arene as a negative electron beam resist Monreal GH, Staggs SJ, Blanda MT, Geerts WJ, Galloway HC, Spencer GF |
2003 - 2006 |
Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic Naulleau PP, Cain JP, Goldberg KA |
2007 - 2013 |
In situ chemical sensing in AlGaN/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control Cho S, Janiak DS, Rubloff GW, Aumer ME, Thomson DB, Partlow DP |
2014 - 2020 |
Shutter transients during solid-source epitaxy Heyn C, Cunis S |
2021 - 2029 |
Impurity redistribution due to recrystallization of preamorphized silicon Duffy R, Venezia VC, van der Tak K, Hopstaken MJP, Maas GCJ, Roozeboom F, Tamminga Y, Dao T |
2030 - 2033 |
Determination of Mg composition in MgxZn1-xO alloy: Validity of Vegard's law Ashrafi ABMA, Segawa Y |
2034 - 2040 |
Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow-k dielectric for copper interconnects Chen JY, Pan FM, Chang L, Cho AT, Chao KJ |
2041 - 2045 |
Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP/InGaAsP high mesa waveguides Zhao W, Bae JW, Adesida I, Jang JH |
2046 - 2050 |
Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N-2 chemistry and hydrogen silsesquioxane hard mask resist Larrieu G, Dubois E |
2051 - 2055 |
Nanopatterning of polyfluorene derivative using electron-beam lithography Doi Y, Saeki A, Koizumi Y, Seki S, Okamoto K, Kozawa T, Tagawa S |
2056 - 2062 |
50X50 mu m pixel magnetic focus field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target Egami N, Nanba M, Takiguchi Y, Miyakawa K, Watabe T, Okazaki S, Osada K, Obara Y, Tanaka M, Itoh S |
2063 - 2068 |
Highly anisotropic gate electrode patterning in neutral beam etching using F-2 gas chemistry Noda S, Hoshino Y, Ozaki T, Samukawa S |
2069 - 2072 |
Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method Ryu Y, Yong KJ |
2073 - 2077 |
Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25 nm silicon nanoimprint templates Olynick DL, Liddle JA, Rangelow IW |
2078 - 2083 |
Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100) Torres VM, Khazi-Syed A |
2084 - 2088 |
Prevention of Cu degradation using in situ N-2 plasma treatment in a dual-damascene process Tomohisa S, Yoshikawa K, Yonekura K, Sakamori S, Fujiwara N, Tsujimoto K, Nishioka K, Kobayashi H, Oomori T |
2089 - 2094 |
Effect of Li0.5La0.5TiO3 solid electrolyte films on electrochemical properties of LiCoO2 thin film cathodes with different rapid-thermal annealing conditions Ahn JK, Yoon SG, Kim CS |
2095 - 2101 |
Conformability and optical reflectance of Ti/Au film sputtered on the Si vertical sidewalls Jo KW, Yun SS, Punithavelan N, Jeong SH, Lee SK, Lee JH |
2102 - 2108 |
Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materials Shin J, Rodriguez BJ, Baddorf AP, Thundat T, Karapetian E, Kachanov M, Gruverman A, Kalinin SV |
2109 - 2113 |
Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them Choy HKH, Fonstad CG |
2114 - 2121 |
Physical properties of nanostructures grown by oblique angle deposition Singh JP, Karabacak T, Ye DX, Liu DL, Picu C, Lu TM, Wang GC |
2122 - 2126 |
Growth of TiO2 nanorods by two-step thermal evaporation Wu JM, Shih HC, Wu WT |
2127 - 2131 |
Presence of nanosize Au dots on the formation of ohmic contact for the Ni-Au base film to p-GaN Yang JL, Chen JS, Chang SJ |
2132 - 2136 |
Cap layer induced stress in InAs/(Al)GaAs quantum dots Chen SD, Chen YY, Lee SC |
2137 - 2140 |
Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors Li RY, Wang ZG, Xu B, Jin P, Guo X, Chen M |
2141 - 2145 |
Synthesis and characterization of one-dimensional WO2 nanorods Ma YR, Lin CM, Yeh CL, Huang RT |
2146 - 2150 |
Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition Hsiao WC, Liu CP, Wang YL |
2151 - 2159 |
Influence of process variables on electron beam chemical vapor deposition of platinum Beaulieu D, Ding Y, Wang ZL, Lackey WJ |
2160 - 2175 |
Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaning Xu K, Vos R, Vereecke G, Doumen G, Fyen W, Mertens PW, Heyns MM, Vinckier C, Fransaer J, Kovacs F |
2176 - 2176 |
Effect of imprinting pressure on residual layer thickness in UV nano-imprint lithography (vol 23, pg 1102, 2005) Lee H |
2179 - 2179 |
Papers from the 6th AVS International conference on Microelectronics and Interfaces - 21-23 March 2005 - Santa Clara, Califorina - Sponsored by AVS - Preface Rogers BR |
2180 - 2183 |
Fabrication and characterization of InGaAlP/InGaP semiconductor circular ring lasers Shih MC, Wang SC, Liang CW |
2184 - 2188 |
Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization Gu S, Dunton SV, Walker AJ, Nallamothu S, Chen EH, Mahajani M, Herner SB, Eckert VL, Hu S, Konevecki M, Petti C, Radigan S, Raghuram U, Vyvoda MA |
2189 - 2193 |
Modified three terminal charge pumping technique applied to vertical transistor structures Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT |
2194 - 2197 |
Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates Shamiryan D, Paraschiv V, Locorotondo S, Beckx S, Boullart W, Vanhaelemeersch S |
2198 - 2202 |
Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmas Mannaert G, Baklanov MR, Le QT, Travaly Y, Boullart W, Vanhaelemeersch S, Jonas AM |
2203 - 2211 |
Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma Kim DH, Lee CH, Cho SH, Lee NE, Kwon GC |
2212 - 2217 |
Modeling of radial uniformity at a wafer interface in a 2f-CCP for SiO2 etching Yagisawa T, Shimada T, Makabe T |
2218 - 2221 |
Modeling of the influence of dielectric target on interface sheath characteristics in a radio-frequency magnetron sputtering Kuroiwa S, Mine T, Yagisawa T, Makabe T |
2222 - 2225 |
Reduction of the initial defect density and improvement of the reliability of Cu/low-k structures by a methylating treatment Borthakur S, Satyanarayana S, Knorr A, Kraatz M, Ho PS |
2226 - 2231 |
Control of sidewall slope in silicon vias using SF6/O-2 plasma etching in a conventional reactive ion etching tool Figueroa RF, Spiesshoefer S, Burkett SL, Schaper L |
2232 - 2235 |
Pressure dependent Parylene-N pore sealant penetration in porous low-kappa dielectrics Juneja JS, Ten Eyck GA, Bakhru H, Lu TM |
2236 - 2239 |
Removal of chemical-mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching Cho H, Pearton SJ |
2240 - 2243 |
Silicon interface trap characterization with elastic metal gate metrology Kraus PA, Ho N, Bae SH, Olsen CS |
2244 - 2248 |
X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics Hung PY, Gondran C, Ghatak-Roy A, Terada S, Bunday B, Yeung H, Diebold A |
2249 - 2253 |
Simultaneous optical measurement of Ge content and carbon doping in strained epitaxial SiGe films Morris S, Le Cunff D, Ristoiu D, Vachellerie V, Deleglise F, Dutartre D |