화학공학소재연구정보센터

Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.23, No.5 Entire volume, number list
ISSN: 1071-1023 (Print) 

In this Issue (73 articles)

L13 - L15 120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors
Yamashita Y, Endoh A, Ikeda K, Hikosaka K, Mimura T, Higashiwaki M, Matsui T, Hiyamizu S
1849 - 1855 Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP
1856 - 1865 Protein binding on thermally grown silicon dioxide
Lee SC, Keener MT, Tokachichu DR, Bhushan B, Barnes PD, Cipriany BR, Gao M, Brillson LJ
1866 - 1872 Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow-k interconnects
Chen Z, Prasad K, Jiang N, Tang LJ, Lu PW, Li CY
1873 - 1876 Formation of vertical ridge structure in 660 nm laser diodes for high power single mode operation
Cho S, Lee S, Kang J, Ma B, Lee C, Shin Y, Kim B, Kang D, Kim Y, Park Y
1877 - 1882 As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics
Tilke AT, Forster M, Schupke K, Freigofas A, Wagner C, Dahl C
1883 - 1886 Thermal conductivity of B-C-N and BN nanotubes
Chang CW, Han WQ, Zettl A
1887 - 1890 Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography
Chen K, Cybart SA, Dynes RC
1891 - 1894 Pt-coated InN nanorods for selective detection of hydrogen at room temperature
Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ
1895 - 1900 Electron beam lithography with negative Calixarene resists on dense materials: Taking advantage of proximity effects to increase pattern density
Buhlmann S, Muralt P, Kuenzi PA, Staufer U
1901 - 1904 Effect of film thickness on the ferroelectric properties of Pb(Zr0.2Ti0.8)O-3 thin films for nano-data storage applications
Lee WS, Ahn KC, Yoon SG, Kim CS
1905 - 1908 Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer
Chen SY, Chen LJ, Tzeng SD, Gwo S
1909 - 1912 Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors
Huang CY, Ou TM, Chou ST, Tsai CS, Wu MC, Lin SY, Chi JY
1913 - 1923 Towards a controlled patterning of 10 nm silicon gates in high density plasmas
Pargon E, Darnon M, Joubert O, Chevolleau T, Vallier L, Mollard L, Lill T
1924 - 1928 Silver coplanar waveguides as the passive components of choice for microwave integrated circuits
Levenets VV, Amaya RE, Tarr NG, Smy TJ, Rogers JWM
1929 - 1935 Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs
Zimmerman JD, Brown ER, Gossard AC
1936 - 1942 Investigations on the mechanism of silicon etching with chlorine-trifluoride
Hochst A, Fischer F, Kirbach G, Urban A, Becker V, Irmscher M, Sailer H, Kern DP
1943 - 1947 Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
Cheng CC, Tsai YY, Lin KW, Chen HI, Hsu WH, Hong CW, Lin HL, Liu WC
1948 - 1951 Field-emission characteristics of boron-carbon-nitride nanofilm
Kimura C, Shima H, Okada K, Funakawa S, Sugino T
1952 - 1955 Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping
Chang JJ, Liu CP, Hsieh TE, Wang YL
1956 - 1963 Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films
Vamvakas VE, Davazoglou D
1964 - 1969 Spindt tip composed of carbon nanotubes
Moon JH, Lim SH, Yoon HS, Park KC, Kang S, Bae C, Kim JJ, Jang J
1970 - 1974 Electrical and optical characteristics of hydrogen-plasma treated ZnO nanoneedles
Yoo J, Park WI, Yi GC
1975 - 1979 Density of electron-beam-induced amorphous carbon deposits
Nishio M, Sawaya S, Akita S, Nakayama Y
1980 - 1983 Surface-enhanced Raman spectroscopy of nanodiamond particles on silver
Perevedentseva E, Karmenyan A, Chung PH, Cheng CL
1984 - 1991 Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations
Rhallabi A, Gaillard M, Elmonser L, Marcos G, Talneau A, Pommereau F, Pagnod-Rossiaux P, Landesman JP, Bouadma N
1992 - 1997 Microelectromechanical device for lateral force calibration in the atomic force microscope: Lateral electrical nanobalance
Cumpson PJ, Hedley J, Clifford CA
1998 - 2002 Synthesis, characterization, and investigation of a conformationally immobile calix[6]arene as a negative electron beam resist
Monreal GH, Staggs SJ, Blanda MT, Geerts WJ, Galloway HC, Spencer GF
2003 - 2006 Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic
Naulleau PP, Cain JP, Goldberg KA
2007 - 2013 In situ chemical sensing in AlGaN/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control
Cho S, Janiak DS, Rubloff GW, Aumer ME, Thomson DB, Partlow DP
2014 - 2020 Shutter transients during solid-source epitaxy
Heyn C, Cunis S
2021 - 2029 Impurity redistribution due to recrystallization of preamorphized silicon
Duffy R, Venezia VC, van der Tak K, Hopstaken MJP, Maas GCJ, Roozeboom F, Tamminga Y, Dao T
2030 - 2033 Determination of Mg composition in MgxZn1-xO alloy: Validity of Vegard's law
Ashrafi ABMA, Segawa Y
2034 - 2040 Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow-k dielectric for copper interconnects
Chen JY, Pan FM, Chang L, Cho AT, Chao KJ
2041 - 2045 Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP/InGaAsP high mesa waveguides
Zhao W, Bae JW, Adesida I, Jang JH
2046 - 2050 Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N-2 chemistry and hydrogen silsesquioxane hard mask resist
Larrieu G, Dubois E
2051 - 2055 Nanopatterning of polyfluorene derivative using electron-beam lithography
Doi Y, Saeki A, Koizumi Y, Seki S, Okamoto K, Kozawa T, Tagawa S
2056 - 2062 50X50 mu m pixel magnetic focus field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target
Egami N, Nanba M, Takiguchi Y, Miyakawa K, Watabe T, Okazaki S, Osada K, Obara Y, Tanaka M, Itoh S
2063 - 2068 Highly anisotropic gate electrode patterning in neutral beam etching using F-2 gas chemistry
Noda S, Hoshino Y, Ozaki T, Samukawa S
2069 - 2072 Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method
Ryu Y, Yong KJ
2073 - 2077 Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25 nm silicon nanoimprint templates
Olynick DL, Liddle JA, Rangelow IW
2078 - 2083 Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)
Torres VM, Khazi-Syed A
2084 - 2088 Prevention of Cu degradation using in situ N-2 plasma treatment in a dual-damascene process
Tomohisa S, Yoshikawa K, Yonekura K, Sakamori S, Fujiwara N, Tsujimoto K, Nishioka K, Kobayashi H, Oomori T
2089 - 2094 Effect of Li0.5La0.5TiO3 solid electrolyte films on electrochemical properties of LiCoO2 thin film cathodes with different rapid-thermal annealing conditions
Ahn JK, Yoon SG, Kim CS
2095 - 2101 Conformability and optical reflectance of Ti/Au film sputtered on the Si vertical sidewalls
Jo KW, Yun SS, Punithavelan N, Jeong SH, Lee SK, Lee JH
2102 - 2108 Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materials
Shin J, Rodriguez BJ, Baddorf AP, Thundat T, Karapetian E, Kachanov M, Gruverman A, Kalinin SV
2109 - 2113 Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them
Choy HKH, Fonstad CG
2114 - 2121 Physical properties of nanostructures grown by oblique angle deposition
Singh JP, Karabacak T, Ye DX, Liu DL, Picu C, Lu TM, Wang GC
2122 - 2126 Growth of TiO2 nanorods by two-step thermal evaporation
Wu JM, Shih HC, Wu WT
2127 - 2131 Presence of nanosize Au dots on the formation of ohmic contact for the Ni-Au base film to p-GaN
Yang JL, Chen JS, Chang SJ
2132 - 2136 Cap layer induced stress in InAs/(Al)GaAs quantum dots
Chen SD, Chen YY, Lee SC
2137 - 2140 Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors
Li RY, Wang ZG, Xu B, Jin P, Guo X, Chen M
2141 - 2145 Synthesis and characterization of one-dimensional WO2 nanorods
Ma YR, Lin CM, Yeh CL, Huang RT
2146 - 2150 Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition
Hsiao WC, Liu CP, Wang YL
2151 - 2159 Influence of process variables on electron beam chemical vapor deposition of platinum
Beaulieu D, Ding Y, Wang ZL, Lackey WJ
2160 - 2175 Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaning
Xu K, Vos R, Vereecke G, Doumen G, Fyen W, Mertens PW, Heyns MM, Vinckier C, Fransaer J, Kovacs F
2176 - 2176 Effect of imprinting pressure on residual layer thickness in UV nano-imprint lithography (vol 23, pg 1102, 2005)
Lee H
2179 - 2179 Papers from the 6th AVS International conference on Microelectronics and Interfaces - 21-23 March 2005 - Santa Clara, Califorina - Sponsored by AVS - Preface
Rogers BR
2180 - 2183 Fabrication and characterization of InGaAlP/InGaP semiconductor circular ring lasers
Shih MC, Wang SC, Liang CW
2184 - 2188 Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization
Gu S, Dunton SV, Walker AJ, Nallamothu S, Chen EH, Mahajani M, Herner SB, Eckert VL, Hu S, Konevecki M, Petti C, Radigan S, Raghuram U, Vyvoda MA
2189 - 2193 Modified three terminal charge pumping technique applied to vertical transistor structures
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
2194 - 2197 Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates
Shamiryan D, Paraschiv V, Locorotondo S, Beckx S, Boullart W, Vanhaelemeersch S
2198 - 2202 Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmas
Mannaert G, Baklanov MR, Le QT, Travaly Y, Boullart W, Vanhaelemeersch S, Jonas AM
2203 - 2211 Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma
Kim DH, Lee CH, Cho SH, Lee NE, Kwon GC
2212 - 2217 Modeling of radial uniformity at a wafer interface in a 2f-CCP for SiO2 etching
Yagisawa T, Shimada T, Makabe T
2218 - 2221 Modeling of the influence of dielectric target on interface sheath characteristics in a radio-frequency magnetron sputtering
Kuroiwa S, Mine T, Yagisawa T, Makabe T
2222 - 2225 Reduction of the initial defect density and improvement of the reliability of Cu/low-k structures by a methylating treatment
Borthakur S, Satyanarayana S, Knorr A, Kraatz M, Ho PS
2226 - 2231 Control of sidewall slope in silicon vias using SF6/O-2 plasma etching in a conventional reactive ion etching tool
Figueroa RF, Spiesshoefer S, Burkett SL, Schaper L
2232 - 2235 Pressure dependent Parylene-N pore sealant penetration in porous low-kappa dielectrics
Juneja JS, Ten Eyck GA, Bakhru H, Lu TM
2236 - 2239 Removal of chemical-mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching
Cho H, Pearton SJ
2240 - 2243 Silicon interface trap characterization with elastic metal gate metrology
Kraus PA, Ho N, Bae SH, Olsen CS
2244 - 2248 X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics
Hung PY, Gondran C, Ghatak-Roy A, Terada S, Bunday B, Yeung H, Diebold A
2249 - 2253 Simultaneous optical measurement of Ge content and carbon doping in strained epitaxial SiGe films
Morris S, Le Cunff D, Ristoiu D, Vachellerie V, Deleglise F, Dutartre D