The electron proximity effect makes it difficult to fabricate uniform patterns at nanometer scale. A simple scheme to correct the effect is presented and applied to fabricate 100 parallel lines spaced at 250 and 500 nm on a photoresist mask using electron beam lithography. The width of each line is less than 100 nm and nearly identical. Two rectangles adjacent to the first and the last lines were exposed with a dosage below the threshold that the electron beam resist requires for development. The linewidths are more uniform with this proximity effect correction than without it. This technique has been used to fabricate ion-damaged high temperature superconducting Josephson junction arrays. (c) 2005 American Vacuum Society.