Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.21, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (44 articles)

1969 - 1985	Review of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glass oxide Keil DL, Helmer BA, Lassig S
1986 - 1995	Electron field-emission from diamond-like carbon films grown by a saddle field fast atom beam source Panwar OS, Sharma R, Kumar S, Dixit PN
1996 - 2000	Investigation of the NO2 sensitivity properties of multiwalled carbon nanotubes prepared by plasma enhanced chemical vapor deposition Valentini L, Cantalini C, Armentano I, Kenny JM, Lozzi L, Santucci S
2001 - 2010	Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy Chen M, Wang X, Chen J, Dong YM, Yi WB, Liu XH, Wang X
2011 - 2017	Particle coating in seeded dusty plasma reactor: Distribution of deposition rates Cao J, Matsoukas T
2018 - 2025	Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist Henschel W, Georgiev YM, Kurz H
2026 - 2028	Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications Kang CS, Cho H, Kim YH, Choi R, Onishi K, Shahriar A, Lee JC
2029 - 2033	Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics Kim YB, Kang MS, Lee T, Ahn J, Choi DK
2034 - 2037	Characterization of diamond sonic micronozzles and microtube Mammana SS, Salvadori MC, Kawakita K, Pereira MT, Cattani M
2038 - 2042	Differential algebraic theory and calculation for arbitrary high order aberrations of a bipotential electrostatic lens Cheng M, Lu YL, Yao ZH
2043 - 2047	In-plane vector magnetometry on rectangular Co dots using polarized neutron reflectivity Temst K, Van Bael MJ, Swerts J, Buntinx D, Van Haesendonck C, Bruynseraede Y, Fritzsche H, Jonckheere R
2048 - 2053	Addition of He to Ar during sputter deposition of electroluminescent ZnS : TbOF thin films Kim JP, Davidson MR, Holloway PH
2054 - 2059	Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode Shiramine K, Muto S, Shibayama T, Takahashi H, Kozaki T, Sato S, Nakata Y, Yokoyama N
2060 - 2066	Deposition of indium tin oxide films on polycarbonate substrates by using ion beam processes Cho JS, Koh SK, Yoon KH
2067 - 2075	Submillimeter-wavelength plasma chemical diagnostics for semiconductor manufacturing Benck EC, Golubiatnikov GY, Fraser GT, Ji B, Motika SA, Karwacki EJ
2076 - 2079	Crystallization of amorphous silicon films by Cu-field aided rapid thermal annealing Kang MS, Kim YB, Ahn JY, Choi DK
2080 - 2088	Electrostatic potential for a hyperbolic probe tip near a semiconductor Feenstra RM
2089 - 2092	Fabrication of nanoscale gratings with reduced line edge roughness using nanoimprint lithography Yu ZN, Chen L, Wu W, Ge HX, Chou SY
2093 - 2097	Magnetic properties of Mn-implanted AlGaP alloys Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM
2098 - 2104	Mechanisms of circular defects for shallow trench isolation oxide deposition Lan JK, Wang YL, Liu CP, Chao CG, Ay CY, Liu CW, Cheng YL
2105 - 2108	Effects of oxygen-flow rate on the characteristics of the ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy Hong JH, Choi WJ, Kim DS, Myoung JM
2109 - 2113	Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation Lu F, Qiao D, Cai M, Yu PKL, Lau SS, Fu RKY, Hung LS, Li CP, Chu PK, Chien HC, Liou Y
2114 - 2119	Evolution of intrinsic stress in nanocrystallin-diamond film deposited by continuous H+ ion bombardment Gu CZ, Jiang X
2120 - 2122	Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions Thomas A, Bruckl H, Sacher MD, Schmalhorst J, Reiss G
2123 - 2132	Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells Hong J, Kessels WMM, Soppe WJ, Weeber AW, Arnoldbik WM, van de Sanden MCM
2133 - 2137	Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistors Han SY, Choi KJ, Lee JL, Mun JK, Park M, Kim H
2138 - 2141	Fabrication of metallic tunnel junctions for the scanning single electron transistor atomic force microscope Steinmann P, Lister KA, Weaver JMR
2142 - 2146	Highly selective and high rate SiO2 etching using argon-added C2F4/CF3I plasma Ohtake H, Ishihara H, Fuse T, Koshiishi A, Samukawa S
2147 - 2150	Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer Wu WW, Cheng SL, Lee SW, Chen LJ
2151 - 2154	Failure analysis of a cascade laser structure by electrostatic force microscopy Azize M, Girard P, Teissier R, Baranov AN, Joullie A
2155 - 2158	Focused-ion-beam preparation of wedge-shaped cross sections and its application to observing p-n junctions by electron holography Wang ZG, Kato T, Hirayama T, Sasaki K, Saka H, Kato N
2159 - 2162	Highly selective reactive-ion etching using CO/NH3/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe-Ni Abe T, Hong YG, Esashi M
2163 - 2168	Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl-2, and Ar/BCl3 gas chemistries in an inductively coupled plasma Tonotani J, Iwamoto T, Sato F, Hattori K, Ohmi S, Iwai H
2169 - 2173	Characterization of CuCl nanocrystals in SiO2 matrix fabricated by inductively coupled plasma-assisted sputtering deposition Kurisu H, Nagoya K, Yamada N, Yamamoto S, Matsuura M
2174 - 2183	Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas Detter X, Palla R, Thomas-Boutherin I, Pargon E, Cunge G, Joubert O, Vallier L
2184 - 2187	Ba enrichment on the surface of oxide cathodes Weon BM, van Dam A, Park GS, Hwang CH, Han SD, Kim IW, Seol SK, Kwon YB, Cho CS, Je JH, Hwu Y, Tsai WL, Ruterana P
2188 - 2192	Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for micrbelectromechanical system fabrication Ichiki T, Sugiyama Y, Ujiie T, Horiike Y
2193 - 2197	Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers Park CW, Lee SY, Kim SH, Kang JY
2198 - 2204	Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a CF4 plasma Min JH, Hwang SW, Lee GR, Moon SH
2205 - 2211	Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching Vitale SA, Smith BA
2212 - 2216	Electron field emission from boron nitride nanofilm and its application to graphite nanofiber Kimura C, Yamamoto T, Funakawa S, Hirakawa M, Murakami H, Sugino T
2217 - 2219	Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality Koval Y, Borzenko T, Dubonos S
2220 - 2222	Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors Nakano Y, Kachi T, Jimbo T
2223 - 2223	Silicon metal-oxide-semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing (vol 21, pg 500, 2003) Hong CY, Akinwande AI