Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a - Si) interlayer has been achieved. The a - Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2003 American Vacuum Society.