검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Long range, non-destructive characterization of GaN substrates for power devices Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ Journal of Crystal Growth, 506, 178, 2019 |
| 2 |
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ Solid-State Electronics, 136, 30, 2017 |
| 3 |
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Feigelson BN, Anderson TJ, Abraham M, Freitas JA, Hite JK, Eddy CR, Kub FJ Journal of Crystal Growth, 350(1), 21, 2012 |
| 4 |
GaN vertical and lateral polarity heterostructures on GaN substrates Hite JK, Bassim ND, Twigg ME, Mastro MA, Kub FJ, Eddy CR Journal of Crystal Growth, 332(1), 43, 2011 |
| 5 |
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ Journal of Crystal Growth, 312(18), 2616, 2010 |
| 6 |
Reaction Dynamics of Activated Hydrophobic Silicon for Low-Temperature Wafer Bonding Breninford MP, Colinge CA, Holl SL, Hobart KD, Kub FJ Journal of the Electrochemical Society, 156(5), H303, 2009 |
| 7 |
UV activation treatment for hydrophobic wafer bonding Holl SL, Colinge CA, Hobart KD, Kub FJ Journal of the Electrochemical Society, 153(7), G613, 2006 |
| 8 |
Direct wafer bonded abrupt junction tunnel diodes Esser RH, Hobart KD, Kub FJ Journal of the Electrochemical Society, 151(6), G387, 2004 |
| 9 |
Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates Myers RL, Saddow SE, Rao S, Hobart KD, Fatemi M, Kub FJ Materials Science Forum, 457-460, 1511, 2004 |
| 10 |
Improved low-temperature Si-Si hydrophilic wafer bonding Esser RH, Hobart KD, Kub FJ Journal of the Electrochemical Society, 150(3), G228, 2003 |